Publications Details

A comparison of interstital oxygen calculated by different techniques

Medernach, J.W.

Methods which report an ability to determine interstitial oxygen (O{sub i}) in heavily doped silicon include the short baseline (SBL) and the curved baseline (CBL) techniques. Both the SBL and CBL methods are similar with the exception of the calibration. We developed a FORTRAN software package to provide separate methods for calculating O{sub i}. The strength of the software is its ability to rapidly compare methods. We report on a comparison of calculation methods including the ASTM standard test F1188-88 which is used in a calibration, and the SBL and the CBL methods, which are used for the heavily doped silicon to provide reliable results. The O{sub i} values calculated for both virgin and thermally processed silicon are reported.