Publications Details

Publications / Conference

2K nonvolatile shadow RAM and 256K EEPROM SONOS nonvolatile memory development

Nasby, R.D.S.

This paper describes SONOS nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory technology. The technology has 1.2 μm minimum features in a twin well design using shallow trench isolation.