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200 MeV, fast neutron and gamma ray effects on AlGaAs/GaAs HEMTs (high electron mobility transistors)
This paper reports the changes caused by fast neutrons and 200 MeV protons in the electrical properties of high electron mobility transistors (HEMT). A larger gate voltage was required after irradiation with neutron fluences in the 1E14 to 2E15 n/cm{sup 2} range and 200 MeV proton fluences in the 1E14 to 1E15 p/cm{sup 2} range than was required prior to irradiation to obtain the same value of I{sub ds}. The increase in gate voltage required to compensate for a fluence of 1E15 protons/cm{sup 2} was up to four times as great as that required to compensate for the same fluence of neutrons. All devices showed microwave gain (s21) after exposure to 6E14 particles/cm{sup 2} if the gate bias was adjusted to maintain the pre-irradiation value of I{sub ds}. Gamma irradiation at 5E7 rads(GaAs) had no detectable effect on the devices. 8 refs., 6 figs., 1 tab.