Materials in the La{sub 0.1}Sr{sub 0.9}Co{sub 1-y}MnyO{sub 3-{delta}} (LSCM) family are potentially useful as ceramic membranes for high-temperature oxygen separations. A series of LSCM samples was synthesized by solid state methods and characterized by powder X-ray diffraction, thermogravimetric analysis, and four-probe conductivity. The materials were indexed in the cubic Pm-3m space group. TGA data implied that LSCM can reversibly absorb and desorb oxygen versus temperature and partial oxygen pressure, while powder diffraction data showed that the material maintained the cubic perovskite structure. Preliminary four-probe conductivity measurements signify p-type semiconducting behavior.
This report develops a series of porosity surfaces for the Waste Isolation Pilot Plant. The concept of a porosity surface was developed for performance assessment and comprises calculation of room closure as salt creep processes are mitigated by gas generation and back stress created by the waste packages within the rooms. The physical and mechanical characteristics of the waste packaging that has already been disposed--such as the pipe overpack--and new waste packaging--such as the advanced mixed waste compaction--are appreciably different than the waste form upon which the original compliance was based and approved. This report provides structural analyses of room closure with various waste inventories. All of the underlying assumptions pertaining to the original compliance certification including the same finite element code are implemented; only the material parameters describing the more robust waste packages are changed from the certified baseline. As modeled, the more rigid waste tends to hold open the rooms and create relatively more void space in the underground than identical calculations run on the standard waste packages, which underpin the compliance certification. The several porosity surfaces quantified within this report provide possible ranges of pressure and porosity for performance assessment analyses.3 Intentionally blank4 AcknowledgementsThis research is funded by WIPP programs administered by the U.S. Department of Energy. The authors would like to acknowledge the valuable contributions to this work provided by others. Dr. Joshua S. Stein helped explain the hand off between these finite element porosity surfaces and implementation in the performance calculations. Dr. Leo L. Van Sambeek of RESPEC Inc. helped us understand the concepts of room closure under the circumstances created by a rigid waste inventory. Dr. T. William Thompson and Tom W. Pfeifle provided technical review and Mario J. Chavez provided a Quality Assurance review. The paper has been improved by these individuals.Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94Al850005 Intentionally Blank6
An a posteriori error estimator is developed for the eigenvalue analysis of three-dimensional heterogeneous elastic structures. It constitutes an extension of a well-known explicit estimator to heterogeneous structures. We prove that our estimates are independent of the variations in material properties and independent of the polynomial degree of finite elements. Finally, we study numerically the effectivity of this estimator on several model problems.
We investigate evolving surface morphology during focused ion beam bombardment of C and determine its effects on sputter yield over a large range of ion dose (10{sup 17}-10{sup 19} ions/cm{sup 2}) and incidence angles ({Theta} = 0-80{sup o}). Carbon bombarded by 20 keV Ga{sup +} either retains a smooth sputtered surface or develops one of two rough surface morphologies (sinusoidal ripples or steps/terraces) depending on the angle of ion incidence. For conditions that lead to smooth sputter-eroded surfaces there is no change in yield with ion dose after erosion of the solid commences. However, for all conditions that lead to surface roughening we observe coarsening of morphology with increased ion dose and a concomitant decrease in yield. A decrease in yield occurs as surface ripples increase wavelength and, for large {Theta}, as step/terrace morphologies evolve. The yield also decreases with dose as rippled surfaces transition to have steps and terraces at {Theta} = 75{sup o}. Similar trends of decreasing yield are found for H{sub 2}O-assisted focused ion beam milling. The effects of changing surface morphology on yield are explained by the varying incidence angles exposed to the high-energy beam.
The nucleation of nanoscale water at surfaces in humid environments is sensitive to several factors, including the details of the surface morphology, ability of the surface to hydrate and the presence of contaminants. Tapping mode atomic force microscopy was used to investigate the nucleation process as a function of relative humidity (RH) on passive aluminum and gold thin films. Films exposed to the ambient environment prior to RH exposure showed discrete structures with lateral sizes ranging from 10 to 100 nm only at RH > 70%. These structures formed preferentially at grain boundaries, triple points and regions with significant topography such as protruding grains. The morphology of the passive aluminum surface is permanently altered at the sites where discrete structures were observed; nodules with heights ranging from 0.5 to 2 nm persist even after reducing the RH to <2%. The gold surface does not show such a permanent change in morphology after reducing the RH. Passive aluminum films exposed to high RH immediately after growth (e.g. no ambient exposure) do not show discrete structures even at the highest RH exposures of 90%, suggesting a hydrophilic surface and the importance of surface hydrocarbon contaminants in affecting the distribution of the water layer.
Due to material limitations of poly-Si resonators, polycrystalline diamond (poly-C) has been explored as a new MEMS resonator material. The poly-C resonators are designed, fabricated and tested using electrostatic (Michigan State University) and piezoelectric (Sandia National Laboratories) actuation methods, and the results are compared. For comparable resonator structures, although the resonance frequencies are similar, the measured Q values in the ranges of 1000-2000 and 10,000-15,000 are obtained for electrostatic and piezoelectric actuation methods, respectively. The difference in Q for the two methods is related to different pressures used during the measurement and not to the method of measurement. For the poly-C cantilever beam resonators, the highest value of their quality factor (Q) is reported for the first time (15,263).
Tethered supramolecular machines represent a new class of active self-assembled monolayers in which molecular configurations can be reversibly programmed using electrochemical stimuli. We are using these machines to address the chemistry of substrate surfaces for integrated microfluidic systems. Interactions between the tethered tetracationic cyclophane host cyclobis(paraquat-p-phenylene) and dissolved {pi}-electron-rich guest molecules, such as tetrathiafulvalene, have been reversibly switched by oxidative electrochemistry. The results demonstrate that surface-bound supramolecular machines can be programmed to adsorb or release appropriately designed solution species for manipulating surface chemistry.
The total dose hardness of several commercial power MOSFET technologies is examined. After exposure to 20 krad(SiO{sub 2}) most of the n- and p-channel devices examined in this work show substantial (2 to 6 orders of magnitude) increases in off-state leakage current. For the n-channel devices, the increase in radiation-induced leakage current follows standard behavior for moderately thick gate oxides, i.e., the increase in leakage current is dominated by large negative threshold voltage shifts, which cause the transistor to be partially on even when no bias is applied to the gate electrode. N-channel devices biased during irradiation show a significantly larger leakage current increase than grounded devices. The increase in leakage current for the p-channel devices, however, was unexpected. For the p-channel devices, it is shown using electrical characterization and simulation that the radiation-induced leakage current increase is related to an increase in the reverse bias leakage characteristics of the gated diode which is formed by the drain epitaxial layer and the body. This mechanism does not significantly contribute to radiation-induced leakage current in typical p-channel MOS transistors. The p-channel leakage current increase is nearly identical for both biased and grounded irradiations and therefore has serious implications for long duration missions since even devices which are usually powered off could show significant degradation and potentially fail.