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RF/Microwave properties and applications of directly assembled nanotubes and nanowires: LDRD project 102662 final report

Lee, Mark L.; Shaner, Eric A.; Highstrete, Clark H.; Talin, A.A.; Jones, Frank E.

LDRD Project 102662 provided support to pursue experiments aimed at measuring the basic electrodynamic response and possible applications of carbon nanotubes and silicon nanowires at radiofrequency to microwave frequencies, approximately 0.01 to 50 GHz. Under this project, a method was developed to integrate these nanomaterials onto high-frequency compatible co-planar waveguides. The complex reflection and transmission coefficients of the nanomaterials was studied as a function of frequency. From these data, the high-frequency loss characteristics of the nanomaterials were deduced. These data are useful to predict frequency dependence and power dissipation characteristics in new rf/microwave devices incorporating new nanomaterials.

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LDRD final report on Si nanocrystal as device prototype for spintronics applications

Pan, Wei P.; Carroll, Malcolm; Brewer, Luke N.; Verley, Jason V.; Banks, J.C.; Barton, Daniel L.

The silicon microelectronics industry is the technological driver of modern society. The whole industry is built upon one major invention--the solid-state transistor. It has become clear that the conventional transistor technology is approaching its limitations. Recent years have seen the advent of magnetoelectronics and spintronics with combined magnetism and solid state electronics via spin-dependent transport process. In these novel devices, both charge and spin degree freedoms can be manipulated by external means. This leads to novel electronic functionalities that will greatly enhance the speed of information processing and memory storage density. The challenge lying ahead is to understand the new device physics, and control magnetic phenomena at nanometer length scales and in reduced dimensions. To meet this goal, we proposed the silicon nanocrystal system, because: (1) It is compatible with existing silicon fabrication technologies; (2) It has shown strong quantum confinement effects, which can modify the electric and optical properties through directly modifying the band structure; and (3) the spin-orbital coupling in silicon is very small, and for isotopic pure {sup 28}Si, the nuclear spin is zero. These will help to reduce the spin-decoherence channels. In the past fiscal year, we have studied the growth mechanism of silicon-nanocrystals embedded in silicon dioxide, their photoluminescence properties, and the Si-nanocrystal's magnetic properties in the presence of Mn-ion doping. Our results may demonstrate the first evidence of possible ferromagnetic orders in Mn-ion implanted silicon nanocrystals, which can lead to ultra-fast information process and ultra-dense magnetic memory applications.

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Thermal conductivity measurements of Summit polycrystalline silicon

Phinney, Leslie M.; Kuppers, Jaron D.; Clemens, Rebecca C.

A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.

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Tunable ionic-conductivity of collapsed Sandia octahedral molecular sieves (SOMS)

Garino, Terry J.

This proposal focuses on the synthesis and characterization of ''tunable'' perovskite ceramics with resulting controlled strength and temperature of dielectric constants and/or with ionic conductivity. Traditional methods of synthesis involve high temperature oxide mixing and baking. We developed a new methodology of synthesis involving the (1) low temperature hydrothermal synthesis of metastable porous phases with ''tuned'' stoichiometry, and element types, and then (2) low temperature heat treatment to build exact stoichiometry perovskites, with the desired vacancy concentrations. This flexible pathway can lead to compositions and structures not attainable by conventional methods. During the course of this program, a series of Na-Nb perovskites were synthesized by calcining and collapsing microporous Sandia Octahedral Molecular Sieve (SOMS) phases. These materials were studied by various characterization techniques and conductivity measurements to better delineate stability and stoichiometry/bulk conductivity relationships. The conductivity can be altered by changing the concentration and type of the substituting framework cation(s) or by ion exchange of sodium. To date, the Na{sub 0.9}Mg{sub 0.1}Nb{sub 0.8}Ti{sub 0.2}O{sub 3-{delta}} shows the best conductivity.

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Results 81476–81500 of 96,771
Results 81476–81500 of 96,771