Progress and Challenges in Developing a Reliable Embedded ReRAM Memory for Hostile Environments
Abstract not provided.
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Jump to search filtersCharacterizing Switching Variability in TaOx Resistive Memories
Abstract not provided.
Characterizing Switching Variability in TaOx Memristors
Abstract not provided.
Resistive Memory for Neuromorphic Algorithm Acceleration
Abstract not provided.
Characterization of Switching Filament Formation in TaOx Memristive Memory Films
Abstract not provided.
Development, characterization, and modeling of a TaOx ReRAM for a neuromorphic accelerator
ECS Transactions
Resistive random access memory (ReRAM), or memristors, may be capable of significantly improve the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAMbased neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer some insight into the factors responsible for this variability.
Development, characterization, and modeling of a TaOx ReRAM for a neuromorphic accelerator
ECS Transactions
Resistive random access memory (ReRAM), or memristors, may be capable of significantly improve the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAMbased neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer some insight into the factors responsible for this variability.
Onset of Dielectric Breakdown in Silicon Oxynitride Thin Films
Abstract not provided.
Electrical Characterization of Silicon-Rich Nitride and Silicon Oxynitride Films Deposited by Low-Pressure Chemical Vapor Deposition
Abstract not provided.
Dielectric breakdown in LPCVD silicon oxynitride thin films
Abstract not provided.
Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films
Proposed for publication in Applied Physics Letters.
Poole-Frenkel emission in Si-rich nitride and silicon oxynitride thin films is studied in conjunction with compositional aspects of their elastic properties. For Si-rich nitrides varying in composition from SiN{sub 1.33} to SiN{sub 0.54}, the Poole-Frenkel trap depth ({Phi}{sub B}) decreases from 1.08 to 0.52 eV as the intrinsic film strain ({Epsilon}{sub i}) decreases from 0.0036 to -0.0016. For oxynitrides varying in composition from SiN{sub 1.33} to SiO{sub 1.49}N{sub 0.35}, {Phi}{sub B} increases from 1.08 to 1.53 eV as {Epsilon}{sub i} decreases from 0.0036 to 0.0006. In both material systems, a direct correlation is observed between {Phi}{sub B} and {Epsilon}{sub i}. Compositionally induced strain relief as a mechanism for regulating {Phi}{sub B} is discussed.
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