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Accelerating phase-field-based microstructure evolution predictions via surrogate models trained by machine learning methods

npj Computational Materials

Montes de Oca Zapiain, David M.; Stewart, James A.; Dingreville, Remi P.

AbstractThe phase-field method is a powerful and versatile computational approach for modeling the evolution of microstructures and associated properties for a wide variety of physical, chemical, and biological systems. However, existing high-fidelity phase-field models are inherently computationally expensive, requiring high-performance computing resources and sophisticated numerical integration schemes to achieve a useful degree of accuracy. In this paper, we present a computationally inexpensive, accurate, data-driven surrogate model that directly learns the microstructural evolution of targeted systems by combining phase-field and history-dependent machine-learning techniques. We integrate a statistically representative, low-dimensional description of the microstructure, obtained directly from phase-field simulations, with either a time-series multivariate adaptive regression splines autoregressive algorithm or a long short-term memory neural network. The neural-network-trained surrogate model shows the best performance and accurately predicts the nonlinear microstructure evolution of a two-phase mixture during spinodal decomposition in seconds, without the need for “on-the-fly” solutions of the phase-field equations of motion. We also show that the predictions from our machine-learned surrogate model can be fed directly as an input into a classical high-fidelity phase-field model in order to accelerate the high-fidelity phase-field simulations by leaping in time. Such machine-learned phase-field framework opens a promising path forward to use accelerated phase-field simulations for discovering, understanding, and predicting processing–microstructure–performance relationships.

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Pressure‐Induced Formation and Mechanical Properties of 2D Diamond Boron Nitride

Advanced Science

Cellini, Filippo C.; Lavini, Francesco L.; Chen, Elton Y.; Bongiorno, Angelo B.; Popovic, Filip P.; Hartman, Ryan H.; Dingreville, Remi P.; Riedo, Elisa R.

Understanding phase transformations in 2D materials can unlock unprecedented developments in nanotechnology, since their unique properties can be dramatically modified by external fields that control the phase change. Here, experiments and simulations are used to investigate the mechanical properties of a 2D diamond boron nitride (BN) phase induced by applying local pressure on atomically thin h-BN on a SiO2 substrate, at room temperature, and without chemical functionalization. Molecular dynamics (MD) simulations show a metastable local rearrangement of the h-BN atoms into diamond crystal clusters when increasing the indentation pressure. Raman spectroscopy experiments confirm the presence of a pressure-induced cubic BN phase, and its metastability upon release of pressure. Å-indentation experiments and simulations show that at pressures of 2–4 GPa, the indentation stiffness of monolayer h-BN on SiO2 is the same of bare SiO2, whereas for two- and three-layer-thick h-BN on SiO2 the stiffness increases of up to 50% compared to bare SiO2, and then it decreases when increasing the number of layers. Up to 4 GPa, the reduced strain in the layers closer to the substrate decreases the probability of the sp2-to-sp3 phase transition, explaining the lower stiffness observed in thicker h-BN.

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Re-examining the silicon self-interstitial charge states and defect levels: A density functional theory and bounds analysis study

AIP Advances

Stewart, James A.; Modine, N.A.; Dingreville, Remi P.

The self-interstitial atom (SIA) is one of two fundamental point defects in bulk Si. Isolated Si SIAs are extremely difficult to observe experimentally. Even at very low temperatures, they anneal before typical experiments can be performed. Given the challenges associated with experimental characterization, accurate theoretical calculations provide valuable information necessary to elucidate the properties of these defects. Previous studies have applied Kohn-Sham density functional theory (DFT) to the Si SIA, using either the local density approximation or the generalized gradient approximation to the exchange-correlation (XC) energy. The consensus of these studies indicates that a Si SIA may exist in five charge states ranging from -2 to +2 with the defect structure being dependent on the charge state. This study aims to re-examine the existence of these charge states in light of recently derived "approximate bounds"on the defect levels obtained from finite-size supercell calculations and new DFT calculations using both semi-local and hybrid XC approximations. We conclude that only the neutral and +2 charge states are directly supported by DFT as localized charge states of the Si SIA. Within the current accuracy of DFT, our results indicate that the +1 charge state likely consists of an electron in a conduction-band-like state that is coulombically bound to a +2 SIA. Furthermore, the -1 and -2 charge states likely consist of a neutral SIA with one and two additional electrons in the conduction band, respectively.

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Benchmark problems for the Mesoscale Multiphysics Phase Field Simulator (MEMPHIS)

Dingreville, Remi P.; Stewart, James A.; Chen, Elton Y.

This report details the current benchmark results to verify, validate and demonstrate the capabilities of the in-house multi-physics phase-field modeling framework Mesoscale Multiphysics Phase Field Simulator (MEMPHIS) developed at the Center for Integrated Nanotechnologies (CINT). MEMPHIS is a general phase-field capability to model various nanoscience and materials science phenomena related to microstructure evolution. MEMPHIS has been benchmarked against a suite of reported 'classical' phase-field benchmark problems to verify and validate the correctness, accuracy and precision of the models and numerical methods currently implemented into the code.

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Computational capability to study airborne release of solids and container breach due to mechanical insults

International Conference on Nuclear Engineering, Proceedings, ICONE

Louie, David L.; Dingreville, Remi P.; Bignell, John B.; Gilkey, Lindsay N.; Le, San L.; Gordon, Natalie G.

Engineers performing safety analyses throughout the U.S. Department of Energy (DOE) complex rely heavily on the information provided in the DOE Handbook, DOE-HDBK-3010, Airborne Release Fractions/Rates and Respirable Fractions for Nonreactor Nuclear Facilities, to determine radionuclide source terms from postulated accident scenarios. In calculating source terms, analysts tend to use the DOE Handbook's bounding values on airborne release fractions (ARFs) and respirable fractions (RFs) for various categories of insults (representing potential accident release categories). This is typically due to both time constraints and the avoidance of regulatory critique. Limited experimental data on fragmentation of solids, such as ceramic pellets (i.e., PuO2), and container breach due to mechanical insults (i.e., explosion-induced fragmentation, drop and forklift impact), can be supplemented by modeling and simulation using high fidelity computational tools. This paper presents the use of Sandia National Laboratories' SIERRA Solid Mechanics (SIERRA/SM) finite element code to investigate the behavior of two widely utilized waste containers (Standard Waste Box and 7A Drum) subject to a range of free fall impact and puncture scenarios. The resulting behavior of the containers is assessed, and a methodology is presented for calculating bounding airborne release fractions from calculated breach areas for the various accident conditions considered. The paper also describes a novel multi-scale constitutive model recently implemented in SIERRA/SM that can simulate the fracture of brittle materials such as PuO2 and determining the amount of hazardous respirable particles generated during the fracture process. Comparisons are made between model predictions and simple bench-top experiments.

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Results 26–50 of 174
Results 26–50 of 174