A split accumulation gate architecture for silicon MOS quantum dots
Abstract not provided.
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Jump to search filtersCoherent coupling between a quantum dot and a donor in silicon
Abstract not provided.
Towards ultra-high single-shot readout fidelity of an electron spin qubit through an enhanced latching mechanism
Abstract not provided.
Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure
Abstract not provided.
Studying Si/SiGe disordered alloys within effective mass theory
Abstract not provided.
Magnetic field and angular dependent singlet-triplet rotations in a donor-quantum dot qubit
Abstract not provided.
Cobalt micro-magnet integration on silicon MOS quantum dots
Abstract not provided.
Tunnel coupling tuning of a QD-donor S-T qubit
Abstract not provided.
Mixing-Chamber Preamplifier for Spin Qubit Readout
Abstract not provided.
Two-axis control of a coupled quantum dot - donor qubit in Si-MOS
Abstract not provided.
Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout
Abstract not provided.
A split accumulation gate architecture for silicon MOS quantum dots
Abstract not provided.
A Multi-Qubit Testbed using Silicon Quantum Dots
Abstract not provided.
Donor quantum-dot coupled qubits
Abstract not provided.
Coupling MOS quantum dot and phosphorous donor qubit systems
Technical Digest - International Electron Devices Meeting, IEDM
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
Evaluating and optimizing STM donor placement
Abstract not provided.
Valley splitting of single-electron Si MOS quantum dots
Applied Physics Letters
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.
Donor quantum-dot coupled qubits
Abstract not provided.
Coupling MOS Quantum Dot and Phosphorous Donor Qubit Systems
Abstract not provided.
A split accumulation gate architecture for silicon MOS quantum dots
Abstract not provided.
STM of growth kinetics and strain-related challenges to smooth Si thin film epitaxy
Direct Write Nanofabrication for Quantum Computing in Silicon and Color Centers in Diamond
Abstract not provided.
A split accumulation gate architecture for silicon MOS quantum dots
Abstract not provided.
Theory and experiments for silicon based quantum computing
Abstract not provided.
Designs for electrically driven spin qubits based on Silicon-MOS quantum dots
Abstract not provided.
Results 51–75 of 333