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Supercomputer and cluster performance modeling and analysis efforts:2004-2006

Ang, James A.; Vaughan, Courtenay T.; Barnette, Daniel W.; Benner, Robert E.; Doerfler, Douglas W.; Ganti, Anand; Phelps, Sue C.; Rajan, Mahesh; Stevenson, Joel O.; Scott, Ryan T.

This report describes efforts by the Performance Modeling and Analysis Team to investigate performance characteristics of Sandia's engineering and scientific applications on the ASC capability and advanced architecture supercomputers, and Sandia's capacity Linux clusters. Efforts to model various aspects of these computers are also discussed. The goals of these efforts are to quantify and compare Sandia's supercomputer and cluster performance characteristics; to reveal strengths and weaknesses in such systems; and to predict performance characteristics of, and provide guidelines for, future acquisitions and follow-on systems. Described herein are the results obtained from running benchmarks and applications to extract performance characteristics and comparisons, as well as modeling efforts, obtained during the time period 2004-2006. The format of the report, with hypertext links to numerous additional documents, purposefully minimizes the document size needed to disseminate the extensive results from our research.

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A plasma process monitor/control system

Stevenson, Joel O.

Sandia National Laboratories has developed a system to monitor plasma processes for control of industrial applications. The system is designed to act as a fully automated, sand-alone process monitor during printed wiring board and semiconductor production runs. The monitor routinely performs data collection, analysis, process identification, and error detection/correction without the need for human intervention. The monitor can also be used in research mode to allow process engineers to gather additional information about plasma processes. The plasma monitor can perform real-time control of support systems known to influence plasma behavior. The monitor can also signal personnel to modify plasma parameters when the system is operating outside of desired specifications and requires human assistance. A notification protocol can be selected for conditions detected in the plasma process. The Plasma Process Monitor/Control System consists of a computer running software developed by Sandia National Laboratories, a commercially available spectrophotometer equipped with a charge-coupled device camera, an input/output device, and a fiber optic cable.

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The effect of lead content and surface roughness on wetting and spreading of low-lead and no-lead solders on copper-clad FR-4 laminates

Stevenson, Joel O.

Environmental and health concerns pertaining to lead have encouraged research into low-lead alloys for electronic soldering. The development of solder alloys containing lower amounts of lead than Sn/Pb eutectic (37 wt.% lead), but possessing similar properties, is an industry-wide goal. To determine the wettability of low-lead solders, 21 alloys each of Sn/Ag and Sn/Cu eutectic (containing 0 to 10 wt.% lead and/or indium) were tested on as-received copper-clad FR-4. Contact angles for the alloys ranged from 12.5 to 38.9{degrees} and area of spread measurements ranged from 5.2 to 17.3 mm{sup 2} compared with 5 to 150 and {approximately}19 mm{sup 2}, respectively, for Sn/Pb eutectic. Alloys with 8 to 10 wt.% lead showed contact angles and areas of spread similar to Sn/Pb eutectic under similar conditions. The best results on the as-received substrates, compared to the Sn/Pb eutectic, were obtained from the Sn/Ag eutectic with 10 wt.% lead. The very low-lead (less than 10 wt.% lead) and lead-free alloys, however, failed to achieve the performance level of eutectic Sn/Pb solders. A desire to improve the spreading of very low-lead and lead-free solders provided the impetus for these efforts to produce {open_quotes}engineered{close_quotes} rough surfaces. In an attempt to improve the wettability and spreading behavior of very low-lead and lead-free alloys, the very low-lead and lead-free members of the Sn/Ag system were tested on roughened copper-clad FR-4. Every alloy in the test suite demonstrated improvement in area of spread on the roughened substrates. The best results on the roughened substrates, compared to the Sn/Pb eutectic, were obtained from the Sn/Ag eutectic with 8 wt.% lead. The effects of surface roughness on the wettability and flow behavior of solder alloys has provided insight into surface morphologies that lead to improved solderability.

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Inspection of chemically roughened copper surfaces using optical interferometry and scanning electron microscopy: Establishing a correlation between surface morphology and solderability

Stevenson, Joel O.

Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in printed wiring board materials and surface finishes. We are investigating the effects of surface roughness on the wettability and solderability behavior of several types of copper board finishes to gain insight into surface morphologies that lead to improved solderability. In this paper, we present optical interterometry and scanning electron microscopy results for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable movements in solder wettability were observed to company increases in roughness.

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NCMS PWB program report surface finishes team task WBS No. 3.1.1: Phase 1, Etching Studies: Chemical etching of copper for improved solderability

Stevenson, Joel O.

Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. We are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, we present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

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Solderability enhancement of copper through chemical etching

Stevenson, Joel O.

Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. The authors are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, the authors present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

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Numerical methods for determining interstitial oxygen in silicon

Stevenson, Joel O.

The interstitial oxygen (O{sub i}) concentration in Czochralski silicon and the subsequent SiO{sub x} precipitation are important parameters for integrated circuit fabrication. Uncontrolled SiO{sub x} precipitation during processing can create detrimental mechanical and electrical effects that contribute to poor performance. An inability to consistently and accurately measure the initial O{sub i} concentration in heavily doped silicon has led to contradictory results regarding the effects of dopant type and concentration on SiO{sub x} precipitation. The authors have developed a software package for reliably determining and comparing O{sub i} in heavily doped silicon. The SiFTIR{copyright} code implements three independent oxygen analysis methods in a single integrated package. Routine oxygen measurements are desirable over a wide range of silicon resistivities, but there has been confusion concerning which of the three numerical methods is most suitable for the low resistivity portion of the continuum. A major strength of the software is an ability to rapidly produce results for all three methods using only a single Fourier Transform Infrared Spectroscopy (FTIR) spectrum as input. This ability to perform three analyses on a single data set allows a detailed comparison of the three methods across the entire range of resistivities in question. Integrated circuit manufacturers could use the enabling technology provided by SiFTIR{copyright} to monitor O{sub i} content. Early detection of O{sub i} using this diagnostic could be beneficial in controlling SiO{sub x} precipitation during integrated circuit processing.

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Results 26–36 of 36
Results 26–36 of 36