Ultra-Wide-Bandgap Semiconductors for Generation-After-Next Power Electronics
Abstract not provided.
Publications
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Jump to search filtersScaling Power Electronic Converter SWaP Based on WBG and UWBG Device Characteristics
Abstract not provided.
PV Systems Reliability Final Technical Report: Ground Fault Detection
We have examined ground faults in PhotoVoltaic (PV) arrays and the efficacy of fuse, current detection (RCD), current sense monitoring/relays (CSM), isolation/insulation (Riso) monitoring, and Ground Fault Detection and Isolation (GFID) using simulations based on a Simulation Program with Integrated Circuit Emphasis SPICE ground fault circuit model, experimental ground faults installed on real arrays, and theoretical equations.
Ultra Wide Bandgap Grand Challenge
Abstract not provided.
PV Systems Reliability Final Technical Report
The continued exponential growth of photovoltaic technologies paves a path to a solar-powered world, but requires continued progress toward low-cost, high-reliability, high-performance photovoltaic (PV) systems. High reliability is an essential element in achieving low-cost solar electricity by reducing operation and maintenance (O&M) costs and extending system lifetime and availability, but these attributes are difficult to verify at the time of installation. Utilities, financiers, homeowners, and planners are demanding this information in order to evaluate their financial risk as a prerequisite to large investments. Reliability research and development (R&D) is needed to build market confidence by improving product reliability and by improving predictions of system availability, O&M cost, and lifetime. This project is focused on understanding, predicting, and improving the reliability of PV systems. The two areas being pursued include PV arc-fault and ground fault issues, and inverter reliability.
Ultra-Wide-Bandgap Semiconductors for Power Electronics
Abstract not provided.
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability
Abstract not provided.
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability
Abstract not provided.
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability
Abstract not provided.
U.S.-Korea Smart Grid Research on Advanced Inverter Interoperability and Functionality
Abstract not provided.
Recommendations for Isolation Monitor Ground Fault Detectors on Residential and Utility-Scale PV Systems
Abstract not provided.
Performance and Reliability of PV Inverter Component and Systems due to Advanced Inverter Functionality
Abstract not provided.
Reliability of Power Conversion Systems in Photovoltaic Applications
Abstract not provided.
Characterization of Reliability in SiC Power Devices
Abstract not provided.
Reworkable Power Module for Low Thermal Resistance
Abstract not provided.
Evaluation of Interface Trap Buildup in SiC Power MOSFETs using Subthreshold Characteristics
Abstract not provided.
RECOMMENDATIONS FOR RCD GROUND FAULT DETECTOR TRIP THRESHOLDS
Abstract not provided.
Reliabiity Characterization of Wide-Bandgap Semiconductor Switches
Abstract not provided.
RECOMMENDATIONS FOR RCD GROUND FAULT DETECTOR TRIP THRESHOLDS
Abstract not provided.
Extraction and Comparison of Interface Trap Formation During BTI Stress in SiC Power MOSFETs Using Subthreshold Characteristics
Abstract not provided.
erformance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures
Abstract not provided.
Sensitivity Analysis of a New Technique for Trapped Charge Extraction in SiC MOSFETs from Subthreshold Characteristics
Abstract not provided.
Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics
IEEE International Reliability Physics Symposium Proceedings
A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.
Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics
IEEE International Reliability Physics Symposium Proceedings
A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in D
Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics
IEEE International Reliability Physics Symposium Proceedings
A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.
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