Publications

The magnetophotoluminescence (MPL) behavior of a GaAs/Al_0.3Ga_0.7As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the {nu}=l quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the {nu}=l/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors.

The transport properties of a quasi-three-dimensional, 200 layer quantum well structure are investigated at integer filling in the quantum Hall state. We find that the transverse magnetoresistance R_xx, the Hall resistance R_xy, and the vertical resistance R_zz all follow a similar behavior with both temperature and in-plane magnetic field. A general feature of the influence of increasing in-plane field B_in is that the Hall conductance quantization first improves, but above a characteristic value B^C_in, the quantization is systematically removed. We consider the interplay of the chid edge state transport and the bulk (quantum Hall) transport properties. This mechanism may arise from the competition of the cyclotron energy with the superlattice band structure energies. A comparison of the resuIts with existing theories of the chiral edge state transport with in-plane field is also discussed.

We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>v>l/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case of the IQHE limit.

We report on our work on the double electron layer tunneling transistor (DELTT), based on the gate-control of two-dimensional -- two-dimensional (2D-2D) tunneling in a double quantum well heterostructure. While previous quantum transistors have typically required tiny laterally-defined features, by contrast the DELTT is entirely planar and can be reliably fabricated in large numbers. We use a novel epoxy-bond-and-stop-etch (EBASE) flip-chip process, whereby submicron gating on opposite sides of semiconductor epitaxial layers as thin as 0.24 microns can be achieved. Because both electron layers in the DELTT are 2D, the resonant tunneling features are unusually sharp, and can be easily modulated with one or more surface gates. We demonstrate DELTTs with peak-to-valley ratios in the source-drain I-V curve of order 20:1 below 1 K. Both the height and position of the resonant current peak can be controlled by gate voltage over a wide range. DELTTs with larger subband energy offsets ({approximately} 21 meV) exhibit characteristics that are nearly as good at 77 K, in good agreement with our theoretical calculations. Using these devices, we also demonstrate bistable memories operating at 77 K. Finally, we briefly discuss the prospects for room temperature operation, increases in gain, and high-speed.

We report magneto-transport measurements including Hall, Rxy, longitudinal, Rxx, and vertical, Rzz, magnetoresistance on nearly 3-dimensional (3D) 200 layer GaAs/AlGaAs quantum well structures. Although the interlayer band-width is nearly 20% of the Fermi energy, we still observe complete quantization of the Hall resistance for the 3D quantum Hall state. The temperature dependence of the Rxx minimum shows two unusual features: initially, at higher temperatures 1 K where the quantum Hall state develops, a gap with an activation energy much smaller than the Landau gap is observed; in the low temperature limit 0.030 K a variable range hopping behavior takes over with a residual resistivity limit. Independent measurements of Gzz (in 3D ≈ 1/Rzz) where the chiral edge states dominate the vertical transport show the same temperature dependence. © 1998 Published by Elsevier Science B.V. All rights reserved.

A new method for measuring the spin of the electrically charged ground state excitations m the Q$j~j quantum Hall effect ia proposed and demonstmted for the tirst time in GaAs/AIGaAs nndtiquantum wells. The method is &sed on the nuclear spin orientation dependence of" the 2D dc conductivity y in the quantum Hall regime due to the nuclear hyperfine interaction. As a demonstration of this method the spin of the electrically charged excitations of the ground state is determined at filling factor v = 1.

Enhancement of the Zeeman energy of 2D conduction electrons near v = 1 by optical dynamic nuclear polarization (lINP), as observed by the Overhauser shift of the transport detected electron spin resonance, is measured quantitatively for the first time in GaAs/AIGaAs mukiquantum wells. The NMR signal enhancement is obtained under similar conditions in the same sample, allowing the hyperke coupling constant of 3.7T between between the nuclei and 2D conduction electrons to be measured for the first time. The potential to suppress the Zeeman energy by optical DNP is discussed in the context of its potential influence on Skyrmion formation.

This report describes the research accomplishments achieved under the LDRD Project ``Double Electron Layer Tunneling Transistor.`` The main goal of this project was to investigate whether the recently discovered phenomenon of 2D-2D tunneling in GaAs/AlGaAs double quantum wells (DQWs), investigated in a previous LDRD, could be harnessed and implemented as the operating principle for a new type of tunneling device the authors proposed, the double electron layer tunneling transistor (DELTT). In parallel with this main thrust of the project, they also continued a modest basic research effort on DQW physics issues, with significant theoretical support. The project was a considerable success, with the main goal of demonstrating a working prototype of the DELTT having been achieved. Additional DELTT advances included demonstrating good electrical characteristics at 77 K, demonstrating both NMOS and CMOS-like bi-stable memories at 77 K using the DELTT, demonstrating digital logic gates at 77 K, and demonstrating voltage-controlled oscillators at 77 K. In order to successfully fabricate the DELTT, the authors had to develop a novel flip-chip processing scheme, the epoxy-bond-and-stop-etch (EBASE) technique. This technique was latter improved so as to be amenable to electron-beam lithography, allowing the fabrication of DELTTs with sub-micron features, which are expected to be extremely high speed. In the basic physics area they also made several advances, including a measurement of the effective mass of electrons in the hour-glass orbit of a DQW subject to in-plane magnetic fields, and both measurements and theoretical calculations of the full Landau level spectra of DQWs in both perpendicular and in-plane magnetic fields. This last result included the unambiguous demonstration of magnetic breakdown of the Fermi surface. Finally, they also investigated the concept of a far-infrared photodetector based on photon assisted tunneling in a DQW. Absorption calculations showed a narrowband absorption which persisted to temperatures much higher than the photon energy being detected. Preliminary data on prototype detectors indicated that the absorption is not only narrowband, but can be tuned in energy through the application of a gate voltage.

We report reflectivity measurements at 810 nm wavelength on GaAs/GaAlAs multiple quantum wells and NbSe2 layers at 75 K up to magnetic fields of 800 T. In the GaAs system, we observed in two separate measurements new, reproducible oscillatory phenomena in the reflectivity between 30 and 800 T, and in a third measurement on 2H-NbSe2 we observed a decrease in reflectivity of about 50% above 200 T, with some additional evidence for oscillatory behavior. We discuss these measurements based on the expected behavior in terms of their known physical properties, and consider future prospects for the application of optical methods to study condensed matter physics under these extremes. © 1998 Elsevier Science B.V. All rights reserved.

A double quantum well (QW) subject to in-plane magnetic fields B∥ has the dispersion curves of its two QWs shifted in k-space. When the QWs are strongly coupled, an anticrossing and partial energy gap occur, yielding a tunable multi-component Fermi surface. We report measurements of the resultant features in the conductance, the capacitive density of states and giant deviations in the cyclotron effective masses.

This report describes the research accomplishments achieved under the LDRD Project ``Electron Phase Coherent Effects in Nanostructures and Coupled 2D Systems.`` The goal of this project was to discover and characterize novel quantum transport phenomena in small semiconductor structures at low temperatures. Included is a description of the purpose of the research, the various approaches used, and a detailed qualitative description of the numerous new results obtained. The first appendix gives a detailed listing of publications, presentations, patent applications, awards received, and various other measures of the LDRD project success. Subsequent appendices consist of reprinted versions of several specific,`` scientific journal publications resulting from this LDRD project.