Microsystems-enabled photovoltaics (MEPV) can potentially meet increasing demands for light-weight, portable, photovoltaic solutions with high power density and efficiency. The study in this report examines failure analysis techniques to perform defect localization and evaluate MEPV modules. CMOS failure analysis techniques, including electroluminescence, light-induced voltage alteration, thermally-induced voltage alteration, optical beam induced current, and Seabeck effect imaging were successfully adapted to characterize MEPV modules. The relative advantages of each approach are reported. In addition, the effects of exposure to reverse bias and light stress are explored. MEPV was found to have good resistance to both kinds of stressors. The results form a basis for further development of failure analysis techniques for MEPVs of different materials systems or multijunction MEPVs. The incorporation of additional stress factors could be used to develop a reliability model to generate lifetime predictions for MEPVs as well as uncover opportunities for future design improvements.
We present the results of a two-year early career LDRD that focused on defect localization in deep green and deep ultraviolet (UV) light-emitting diodes (LEDs). We describe the laser-based techniques (TIVA/LIVA) used to localize the defects and interpret data acquired. We also describe a defect screening method based on a quick electrical measurement to determine whether defects should be present in the LEDs. We then describe the stress conditions that caused the devices to fail and how the TIVA/LIVA techniques were used to monitor the defect signals as the devices degraded and failed. We also describe the correlation between the initial defects and final degraded or failed state of the devices. Finally we show characterization results of the devices in the failed conditions and present preliminary theories as to why the devices failed for both the InGaN (green) and AlGaN (UV) LEDs.
SEM and SOM techniques for IC analysis that take advantage of 'active injection' are reviewed. Active injection refers to techniques that alter the electrical characteristics of the device analyzed. All of these techniques can be performed on a standard SEM or SOM (using the proper laser wavelengths).
State-of-the-art techniques for failure localization and design modification through bulk silicon are essential for multi-level metallization and new, flip chip packaging methods. The tutorial reviews the transmission of light through silicon, sample preparation, and backside defect localization techniques that are both currently available and under development. The techniques covered include emission microscopy, scanning laser microscope based techniques (electrooptic techniques, LIVA and its derivatives), and other non-IR based tools (FIB, e-beam techniques, etc.).
The working of induced voltage alteration (IVA) techniques and its major developments in areas of hardware for analysis, electrical biasing, detection advances, resolution improvements, and future possibilities, is discussed. IVA technique uses either a scanning electron microscope's (SEM) electron beam or a scanning optical microscope's (SOM) laser beam as the external stimulus. The other IVA techniques were developed using different localized stimuli, with the same sensitive biasing approach. The IVA techniques takes advantage of the strong signal response of CMOS devices when operated as current-to-voltage converters. To improve the biasing approach, externally induced voltage alterations (XIVA) was introduced, in which an ac choke circuit acts as a constant-voltage source. Synchronization with device operation also allows specific vectors to be analyzed using local photocurrent and thermal stimulus.
Optical beam failure analysis methods provide unique capabilities to identify and localize defect types that would be difficult or impossible by other methods. by understanding the physics of signal generation, the user gains the insight necessary to optimize technique performance.
Electrostatic discharge (ESD) and electrical overstress (EOS) damage of Micro-Electro-Mechanical Systems (MEMS) has been identified as a new failure mode. This failure mode has not been previously recognized or addressed primarily due to the mechanical nature and functionality of these systems, as well as the physical failure signature that resembles stiction. Because many MEMS devices function by electrostatic actuation, the possibility of these devices not only being susceptible to ESD or EOS damage but also having a high probability of suffering catastrophic failure due to ESD or EOS is very real. Results from previous experiments have shown stationary comb fingers adhered to the ground plane on MEMS devices tested in shock, vibration, and benign environments. Using Sandia polysilicon microengines, we have conducted tests to establish and explain the ESD/EOS failure mechanism of MEMS devices. These devices were electronically and optically inspected prior to and after ESD and EOS testing. This paper will address the issues surrounding MEMS susceptibility to ESD and EOS damage as well as describe the experimental method and results found from ESD and EOS testing. The tests were conducted using conventional IC failure analysis and reliability assessment characterization tools. In this paper we will also present a thermal model to accurately depict the heat exchange between an electrostatic comb finger and the ground plane during an ESD event.
Thermally-Induced Voltage Alteration (TIVA) is a relatively new technique for locating electrical defects in integrated circuits [1,2]. This paper describes a novel application of TIVA, to locate design anomalies. A newly designed integrated circuit with high and inconsistent Quiescent Power Supply Current (IDDQ) was initially diagnosed with limited success using various failsite isolation techniques. The TIVA technique was successful in accurately locating design anomalies. Results from TIVA identified a spurious ring oscillator in the design. Design modifications carried out using a focussed ion beam (FIB), verified the accuracy of the results from TIVA. This study clearly extends the use of TIVA beyond that of locating electrical defects and anomalies into the realm of design debugging.
Two new failure analysis techniques have been developed for backside and front side localization of open and shorted interconnections on ICs. These scanning optical microscopy techniques take advantage of the interactions between IC defects and localized heating using a focused infrared laser ({lambda} = 1,340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The methods utilize the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detect shorts. Initial investigations demonstrated the feasibility of TIVA and Seebeck Effect Imaging (SEI). Subsequent improvements have greatly increased the sensitivity of the TIVA/SEI system, reducing the acquisition times by more than 20X and localizing previously unobserved defects. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed. The system improvements, non-linear response of IC defects to heating, modeling of laser heating and examples using the improved system for failure analysis are presented.
Thermal modeling and simulations were used to analyze the thermal profiles of a polysilicon-metal test structure generated by thermally-induced voltage alteration (TIVA), a new laser-based failure analysis technique to localize shorted interconnects. The results show that variations in TIVA thermal profiles are due mainly to preferential laser absorption in various locations in the test structure. Differences in oxide thickness also affect the local heat conduction and temperature distribution. Modeling results also show that local variation in heat conduction is less important than the absorbed laser power in determining the local temperatures since our test structure has feature sizes that are small compared to the length over which heat spreads.