Publications

We present an exchange-correlation functional that enables an accurate treatment of systems with electronic surfaces. The functional is developed within the subsystem functional paradigm [1], combining the local density approximation for interior regions with a new functional designed for surface regions. It is validated for a variety of materials by calculations of: (i) properties where surface effects exist, and (ii) established bulk properties. Good and coherent results are obtained, indicating that this functional may serve well as universal first choice for solid state systems. The good performance of this first subsystem functional also suggests that yet improved functionals can be constructed by this approach.

We develop a specialized treatment of electronic surface regions which, via the subsystem functional approach [1], can be used in functionals for self-consistent density-functional theory (DFT). Approximations for both exchange and correlation energies are derived for an electronic surface. An interpolation index is used to combine this surface-specific functional with a functional for interior regions. When the local density approximation (LDA) is used for the interior region, the end result is a straightforward density-gradient dependent functional that shows promising results. Further improvement of the treatment of the interior region by the use of a local gradient expansion approximation is also discussed.

We design a density-functional-theory (DFT) exchange-correlation functional that enables an accurate treatment of systems with electronic surfaces. Surface-specific approximations for both exchange and correlation energies are developed. A subsystem functional approach is then used: an interpolation index combines the surface functional with a functional for interior regions. When the local density approximation is used in the interior, the result is a straightforward functional for use in self-consistent DFT. The functional is validated for two metals (Al, Pt) and one semiconductor (Si) by calculations of (i) established bulk properties (lattice constants and bulk moduli) and (ii) a property where surface effects exist (the vacancy formation energy). Good and coherent results indicate that this functional may serve well as a universal first choice for solid-state systems and that yet improved functionals can be constructed by this approach.

Properties of relevance for the equation of state for a high-density glass are discussed. We review the effects of failure waves, comminuted phase, and compaction on the validity of the Mie-Grueneisen EOS. The specific heat and the Grueneisen parameter at standard conditions for a {rho}{sub 0} = 5.085 g/cm{sup 3} glass ('Glass A') is then estimated to be 522 mJ/g/K and 0.1-0.3, respectively. The latter value is substantially smaller than the value of 2.1751 given in the SESAME tables for a high-density glass with {rho}{sub 0} = 5.46 g/cm{sup 3}. The present unusual value of the Grueneisen parameter is confirmed from the volume dependence determined from fitting the Mie-Grueneisen EOS to shock data in Ref. [2].

It has recently been shown that local values of the conventional exchange energy per particle cannot be described by an analytic expansion in the density variation. Yet, it is known that the total exchange-correlation (XC) energy per particle does not show any corresponding nonanalyticity. Indeed, the nonanalyticity is here shown to be an effect of the separation into conventional exchange and correlation. We construct an alternative separation in which the exchange part is made well behaved by screening its long-ranged contributions, and the correlation part is adjusted accordingly. This alternative separation is as valid as the conventional one, and introduces no new approximations to the total XC energy. We demonstrate functional development based on this approach by creating and deploying a local-density-approximation-type XC functional. Hence, this work includes both the theory and the practical calculations needed to provide a starting point for an alternative approach towards improved approximations of the total XC energy.