Publications Details
Temperature dependence of Static RAM volatility
We have measured the temperature dependence of the volatility of a wide variety of Static RAMS. The temperature dependence is directly related to the memory cell design and device processing or fabrication parameters. We have seen the volatility change by {approximately}10 orders of magnitude when the absolute temperature is changed by a factor of {approximately}2. We present physical reasons for such a large temperature dependence and derive an analytical model which accurately predicts the volatility. Neutron irradiation is seen to increase the low-temperature volatility.