Publications Details
Quantitative analysis of oxygen segregation on inversion domain boundaries in aluminum nitride
Curved and planar inversion domain boundaries (IDB) in aluminum nitride (AIN) form in sintered AIN ceramics containing oxygen, and oxygen is known to segregate to them. A number of interface models shown in Table 1, have been suggested based upon crystallographic constraints, chemical information and observed high resolution electron microscope (HREM) images. Until recently, problems with simulation of HREM images from AIN have made accurate determination of the structure of the IDB interface difficult. The aim of the present study was to use quantitative analytical electron microscopy (AEM) to determine the oxygen concentration at the IDBs, and then to compare the experimental results with calculated oxygen concentrations for each of the IDB models using a Monte Carlo electron trajectory simulation program. A match, if any, between the experimental and calculated oxygen concentrations would indicate the model which best described the IDB structure. The best match was obtained for Youngman's defect model. 14 refs., 5 figs., 3 tabs.