Publications Details

Oxidized AlxGa1-xAs heterostructure planar waveguides

Luo, Y.; Hall, D.C.; Kou, L.; Steingart, L.; Jackson, J.H.; Blum, O.; Hou, H.

Waveguiding by total internal reflection is demonstrated within AlxGa1-xAs semiconductor heterostructures which have been fully oxidized in water vapor at ∼490°C. Refractive index, mode propagation constant, propagation loss (≤ 3 cm-1) at λ0 = 1.3 and 1.55 μm, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single-heterostructure oxide waveguide. An index contrast of Δn = 0.06 is observed between oxidized x = 0.4 and x = 0.8 AlxGa1-xAs oxide layers. Absorption loss at 1.55 μm is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure. © 1999 American Institute of Physics.