This paper describes SONOS nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory technology. The technology has 1.2 μm minimum features in a twin well design using shallow trench isolation.
In this paper we report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, we are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. We find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.
Mid-infrared (3-6 μm) LED's are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures are particularly suited for optical emitters in the mid-infrared region. We are investigating both InAsSb-InAs multiple quantum well (MQW) and InAsSb-InAsP strained layer superlattice (SLS) structures for use as the active region for light emitting diodes (LED's). The addition of phosphorus to the InAs barriers increases the light and heavy hole splitting and hence reduces non-radiative Auger recombination and provides for better electron and hole confinement in the InAsSb quantum well. Low temperature (<20 K) photoluminescence (PL) emission from MQW structures is observed between 3.2 to 6.0 μm for InAsSb wells between 70 to 100 Å and antimony mole fractions between 0.04 to 0.18. Room temperature PL has been observed to 6.4 μm in MQW structures. The additional confinement by InAsP barriers results in low temperature PL being observed over a narrower range (3.2 to 5.0 μm) for the similar well thicknesses with antimony mole fractions between 0.10 to 0.24. Room temperature photoluminescence was observed to 5.8 μm in SLS structures. The addition of a p-AlAsSb layer between the n-type active region (MQW or SLS) and a p-GaAsSb contact layer improves electron confinement of the active region and increases output power by a factor of 4. Simple LED emitters have been fabricated which exhibit an average power at room temperature of >100 μW at 4.0 μm for SLS active regions. These LED's have been used to detect CO2 concentrations down to 24 ppm in a first generation, non-cryogenic sensor system. We will report on the development of novel LED device designs that are expected to lead to further improvements in output power.
Sandia National Laboratories has developed a unique type of portable low-cost range imaging optical radar (laser radar or LADAR). This innovative sensor is comprised of an active floodlight scene illuminator and an image intensified CCD camera receiver. It is a solid-state device (no moving parts) that offers significant size, performance, reliability, and simplicity advantages over other types of 3-D imaging sensors. This unique flash LADAR is based on low cost, commercially available hardware, and is well suited for many government and commercial uses. This paper presents an update of Sandia's development of the Scannerless Range Imager technology and applications, and discusses the progress that has been made in evolving the sensor into a compact, low, cost, high-resolution, video rate Laser Dynamic Range Imager.
We recently reported on the development of a 5-level polysilicon surface micromachine fabrication process consisting of four levels of mechanical poly plus an electrical interconnect layer and its application to complex mechanical systems. This paper describes the application of this technology to create micro-optical systems-on-a-chip. These are demonstration systems, which show that five levels of polysilicon provide greater performance, reliability, and significantly increased functionality. This new technology makes it possible to realize levels of system complexity that have so far only existed on paper, while simultaneously adding to the robustness of many of the individual subassemblies.
The EPA Environmental Technology Verification (ETV) Site Characterization Pilot is a joint effort between EPA and DOE with the objective of accelerating the acceptance of technologies that reduce the cost and increase the speed of environmental clean-up and monitoring. To date, several technology verifications have already been completed. Typical results from completed field demonstrations are presented to illustrate the verification process and the importance of the program in providing objective information to aid potential users in making informed choices regarding the efficacy of these technologies for their specific characterization and monitoring problems.
Vertical-cavity surface-emitting lasers (VCSELs) are uniquely suited to miniaturized free-space optical systems in which surface-mounting and hybrid assembly techniques can be used to combine different technologies together. Two examples are described of such microsystems that are being developed for sensing applications. The first example is a optical position sensing system for rotating parts. Progress on fabricating similar systems by flip-chip bonding techniques is then discussed. The second example is a chemical sensing/analysis system which uses a miniature fluorescence detection module that is based on surface-mounted VCSELs and diffractive optical elements. The detection module is integrated with a capillary electrochromatography separation system and uses substrate-mode light propagation to focus the VCSEL beam on the capillary channel.
Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH3, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH3) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30-50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM ∼ 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.
The Gleeble is an oft-used tool for welding metallurgy research. Besides producing synthetic weld specimens, it is used to determine phase transformation temperatures and kinetics via dilatometry. Experimental data and an FEM model are used to examine measured dilatation errors because of non-uniform heating of the dilatometer and other sources such as sample elastic and plastic deformation. Both isothermal and constant heating/cooling rate scenarios are considered. Further errors which may be introduced when the dilatation is incorrectly assumed to be linearly related to the volume fraction transformed are also discussed.
We report observations of contrasting surface modification behavior of the Au(111) surface in the presence of an electric field and field-emission currents using interfacial force microscopy (IFM) and scanning tunneling microscopy (STM). Our experiments consist of surface modification procedures which allow for large tip-sample gaps, in contrast to fast voltage pulses (applied at tunneling distances) employed by previous STM investigations. Dramatic surface distortions are observed when a 200 nm-radius tip, biased at -100 V, is brought toward the Au surface at a field emission current level of 400 nA and then retracted. In other experiments, we raise the sample voltage to field-emission levels while maintaining a constant current. STM images, measured in a time-resolved manner after each such procedure, show that the presence of a higher electric field (approximately 0.07 V/angstrom) results in step retraction and the disappearance of small islands on the Au(111) surface followed by the formation of vacancy islands in the area directly beneath the apex of the tip where the field is highest. We discuss the implications of these contrasting surface modifications in terms of the various key parameters and in relation to previous studies using voltage pulses in the STM.
The Telemetry Technology Development Department at Sandia National Laboratories actively develops and tests acceleration recorders for penetrating weapons. This new acceleration recorder (MinPen) utilizes a microprocessor-based architecture for operational flexibility while maintaining electronics and packaging techniques developed over years of penetrator testing. MinPen has been demonstrated to function in shock environments up to 20,000 Gs. The MinPen instrumentation development has resulted in a rugged, versatile, miniature acceleration recorder and is a valuable tool for penetrator testing in a wide range of applications.
The monolithic integration of coupled resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the interaction between the cavities. We report the first electrically injected coupled resonator vertical-cavity laser diode and demonstrate novel characteristics arising from the cavity coupling, including methods for external modulation of the laser. A coupled mode theory is used model the output modulation of the coupled resonator vertical cavity laser.
On-heating transformation kinetics were investigated for several steels by using a Gleeble capable of programmable power input as well as programmable temperature cycling. Transformation kinetics determined in both modes are reported. The temperature cycles are significantly different between the two modes due to the latent heat associated with the phase transformations. Both diffusion rates and transformation driving force increase with temperature above the eutectoid temperature, therefore the latent heat can potentially have a significant impact on the transformation kinetics. Experiments with plain carbon steels illustrate that the latent heat of austenite formation causes an appreciable temperature arrest during transformation, and the dilatation response is similarly altered. A kinetic transformation model, based on the decomposition of pearlite and the diffusional growth of austenite, reproduced the transient dilatation data obtained from both control modes reasonably well using the same kinetic parameter values.
Semiconductor processing tools that use a plasma to etch polysilicon or oxides produce residue polymers that build up on the exposed surfaces of the processing chamber. These residues are generally stressed and with time can cause flaking onto wafers resulting in yield loss. Currently, residue buildup is not monitored, and chambers are cleaned at regular intervals resulting in excess downtime for the tool. In addition, knowledge of the residue buildup rate and index of refraction is useful in determining the state of health of the chamber process. We have developed a novel optical fiber-based robust sensor that allows measurements of the residue polymer buildup while not affecting the plasma process.
The establishment of a process to allow planarization of deep x-ray lithography based microfabricated metal components via diamond lapping has enabled examination of three additional microfabrication issues. The areas of improvement that are discussed include materials, microassembly and packaging, and multilevel fabrication. New materials work has centered on magnetic materials including precision micromagnets and surface treatments of electrodeposited materials. Assembly and packaging has been aided by deep silicon etch processing and the use of conventional precision milling equipment combined with press-fit assembly. Diffusion bonding is shown to be a particularly important approach to achieving multilevel metal mechanisms and furthermore shows promise for achieving batch assembled and packaged high aspect-ratio metal micromechanics.
A series of static overpressurization tests of scale models of nuclear containment structures is being conducted by Sandia National Laboratories for the Nuclear Power Engineering Corporation of Japan and the US Nuclear Regulatory Commission. Two tests are being conducted: a test of a model of a steel containment vessel (SCV) and a test of a model of a prestressed concrete containment vessel (PCCV). This paper summarizes the conduct of the high pressure pneumatic test of the SCV model and the results of that test. Results of this test are summarized and are compared with pretest predictions performed by the sponsoring organizations and others who participated in a blind pretest prediction effort. Questions raised by this comparison are identified and plans for posttest analysis are discussed.
Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature and/or elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics from this phenomenon.
The goals of this Laboratory Directed Research and Development (LDRD) effort were to develop and prototype a new molecular simulation method and companion parallel algorithm able to model diffusion of multi-atom molecules through macromolecules under conditions of a chemical potential gradient. At the start of the project no such method existed, thus many important industrial and technological materials problems where gradient driven diffusion of multi-atom molecules is the predominant phenomenon were beyond the reach of molecular simulation (e.g. diffusion in polymers, a fundamental problem underlying polymer degradation in aging weapons).
This report describes how to obtain publication-quality graphics from distorted grid electronic structure codes using the combination of the conversion utility, dgtoexo2, and mustafa, an AVS Express application. dgtoexo2 converts scalar function results from a format applicable to distorted grid codes into the Exodus II unstructured finite element data representation. nmstafa can read Exodus II files and use the AVS Express engine to visualize data on unix and Windows NT platforms. Though not designed for the purpose, the dgtoexo2/EXOdUS II/mustafa combination is sufficiently versatile to provide for the specialized graphics needs of electronic structure codes. The combination also scales well, producing robust performance for problems involving millions of grid points.
This paper presents experimental data and an computational model of the cold spray solid particle impact process. Copper particles impacting onto a polished stainless steel substrate are examined. The high velocity impact causes significant plastic deformation of both the particle and the sub- strate, but no melting is observed. The plastic deformation exposes clean surfaces that, under the high impact pressures, result in significant bond strengths between the particle and substrate. Experimental measurements of the splat and crater sizes compare well with the numerical calculations. It is shown that the crater depth is significant and increases with impact velocity. However, the splat diameter is much less sensitive to the impact velocity. It is also shown that the geometric lengths of the splat and crater scale linearly with the diameter of the impacting particle. It is hoped that the results presented will allow better understanding of the bonding process during cold spray.
A parametric study of the etch characteristics of GaN, AIN and InN has been earned out with IC1/Ar and IBr/Ar chemistries in an Inductively Coupled Plasma discharge. The etch rates of InN and AIN were relatively independent of plasma composition, while GaN showed increased etch rates with interhalogen concentration. Etch rates for all materials increased with increasing rf chuck power, indicating that higher ion bombardment energies are more efficient in enhancing sputter resorption of etch products. The etch rates increased for source powers up to 500 W and remained relatively thereafter for all materials, while GaN and InN showed maximum etch rates with increasing pressure. The etched GaN showed extremely smooth surfaces, which were somewhat better with IBr/Ar than with IC1/Ar. Maximum selectivities of- 14 for InN over GaN and >25 for InN over AIN were obtained with both chemistries.
A new method for measuring the spin of the electrically charged ground state excitations m the Q$j~j quantum Hall effect ia proposed and demonstmted for the tirst time in GaAs/AIGaAs nndtiquantum wells. The method is &sed on the nuclear spin orientation dependence of" the 2D dc conductivity y in the quantum Hall regime due to the nuclear hyperfine interaction. As a demonstration of this method the spin of the electrically charged excitations of the ground state is determined at filling factor v = 1.
For well resolved electrokinetic separation, we L tilize crystalline quartz to micromachine a uniformly packe Q&iKLmnel. Packing features are posts 5 Vm on a side with:} pm spacing and etched 42 Vm deep. In addition to anisotropic wet etch characteristics for micromachining, quartz propmties are compatible with chemical soiutioits, ekctrokinetic high voltage operation, and stationary phase film depositions. To seal these channels, we employ a room temperature silicon-oxynhride deposition to forma membrane, that is subsequently coated for mechanical stability. Using this technique, particulate issues and global warp, that make large area wafer bon ding methods difficult, are avoided, and a room temperature process, in contrast to high temperature bonding techniques, accommodate preprocessing of metal films for electrical interconnect. After sealing channels, a number of macro-assembly steps are required to attach a micro-optical detection system and fluid interconnects. Keywords: microcharmel, integrated channel, micromachined channel, packed channel, electrokinetic channel, eleetrophoretic channel