Publications

Resistive random access memory (ReRAM), or memristors, may be capable of significantly improve the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAMbased neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer some insight into the factors responsible for this variability.

Resistive random access memory (ReRAM), or memristors, may be capable of significantly improve the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAMbased neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer some insight into the factors responsible for this variability.

Abstract not provided.

Abstract not provided.

At sufficiently high energies, the wavelengths of electrons and photons are short enough to only interact with one atom at time, leading to the popular %E2%80%9Cindependent-atom approximation%E2%80%9D. We attempted to incorporate atomic structure in the generation of cross sections (which embody the modeled physics) to improve transport at lower energies. We document our successes and failures. This was a three-year LDRD project. The core team consisted of a radiation-transport expert, a solid-state physicist, and two DFT experts.

Abstract not provided.