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Training neural hardware with noisy components

Proceedings of the International Joint Conference on Neural Networks

Rothganger, Fredrick R.; Evans, Brian R.; Aimone, James B.; DeBenedictis, Erik

Some next generation computing devices may consist of resistive memory arranged as a crossbar. Currently, the dominant approach is to use crossbars as the weight matrix of a neural network, and to use learning algorithms that require small incremental weight updates, such as gradient descent (for example Backpropagation). Using real-world measurements, we demonstrate that resistive memory devices are unlikely to support such learning methods. As an alternative, we offer a random search algorithm tailored to the measured characteristics of our devices.

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Development, characterization, and modeling of a TaOx ReRAM for a neuromorphic accelerator

ECS Transactions

Marinella, Matthew J.; Mickel, Patrick R.; Lohn, Andrew L.; Hughart, David R.; Bondi, Robert J.; Mamaluy, Denis M.; Hjalmarson, Harold P.; Stevens, James E.; Decker, Seth D.; Apodaca, Roger A.; Evans, Brian R.; Aimone, James B.; Rothganger, Fredrick R.; James, Conrad D.; DeBenedictis, Erik

Resistive random access memory (ReRAM), or memristors, may be capable of significantly improve the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAMbased neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer some insight into the factors responsible for this variability.

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Development, characterization, and modeling of a TaOx ReRAM for a neuromorphic accelerator

ECS Transactions

Marinella, Matthew J.; Mickel, Patrick R.; Lohn, Andrew L.; Hughart, David R.; Bondi, Robert J.; Mamaluy, Denis M.; Hjalmarson, Harold P.; Stevens, James E.; Decker, Seth D.; Apodaca, Roger A.; Evans, Brian R.; Aimone, James B.; Rothganger, Fredrick R.; James, Conrad D.; DeBenedictis, Erik

Resistive random access memory (ReRAM), or memristors, may be capable of significantly improve the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAMbased neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer some insight into the factors responsible for this variability.

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6 Results
6 Results