Publications

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The three-dimensional Monte Carlo code ERO has been used to simulate dedicated DIII-D experiments in which Mo and W samples with different sizes were exposed to controlled and well-diagnosed divertor plasma conditions to measure the gross and net erosion rates. Experimentally, the net erosion rate is significantly reduced due to the high local redeposition probability of eroded high-Z materials, which according to the modelling is mainly controlled by the electric field and plasma density within the Chodura sheath. Similar redeposition ratios were obtained from ERO modelling with three different sheath models for small angles between the magnetic field and the material surface, mainly because of their similar mean ionization lengths. The modelled redeposition ratios are close to the measured value. Decreasing the potential drop across the sheath can suppress both gross and net erosion because sputtering yield is decreased due to lower incident energy while the redeposition ratio is not reduced owing to the higher electron density in the Chodura sheath. Taking into account material mixing in the ERO surface model, the net erosion rate of high-Z materials is shown to be strongly dependent on the carbon impurity concentration in the background plasma; higher carbon concentration can suppress net erosion. As a result, the principal experimental results such as net erosion rate and profile and redeposition ratio are well reproduced by the ERO simulations.

Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence < {10{13}} hbox{cm}-2. The unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

This report documents work done for the ITER International Fusion Energy Organization (Sponsor) under a Funds-In Agreement FI 011140916 with Sandia National Laboratories. The work consists of preparing and analyzing samples for an experiment to measure material erosion and deposition in the EAST Tokamak. Sample preparation consisted of depositing thin films of carbon and aluminum onto molybdenum tiles. Analysis consists of measuring the thickness of films before and after exposure to helium plasma in EAST. From these measurements the net erosion and deposition of material will be quantified. Film thickness measurements are made at the Sandia Ion Beam Laboratory using Rutherford backscattering spectrometry and nuclear reaction analysis, as described in this report. This report describes the film deposition and pre-exposure analysis. Results from analysis after plasma exposure will be given in a subsequent report.

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This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

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We analyze a DIII-D tokamak experiment where two tungsten spots on the removable DiMES divertor probe were exposed to 12 s of attached plasma conditions, with moderate strike point temperature and density (~20 eV, ~4.5 × 10¹⁹ m^–3), and 3% carbon impurity content. Both very small (1 mm diameter) and small (1 cm diameter) deposited samples were used for assessing gross and net tungsten sputtering erosion. The analysis uses a 3-D erosion/redeposition code package (REDEP/WBC), with input from a diagnostic-calibrated near-surface plasma code (OEDGE), and with focus on charge state resolved impinging carbon ion flux and energy. The tungsten surfaces are primarily sputtered by the carbon, in charge states +1 to +4. We predict high redeposition (~75%) of sputtered tungsten on the 1 cm spot—with consequent reduced net erosion—and this agrees well with post-exposure DiMES probe RBS analysis data. As a result, this study and recent related work is encouraging for erosion lifetime and non-contamination performance of tokamak reactor high-Z plasma facing components.

The ITER beryllium (Be) first wall (FW) panels are shaped to protect leading edges between neighbouring panels arising from assembly tolerances. This departure from a perfectly cylindrical surface automatically leads to magnetically shadowed regions where eroded Be can be re-deposited, together with co-deposition of tritium fuel. To provide a benchmark for a series of erosion/re-deposition simulation studies performed for the ITER FW panels, dedicated experiments have been performed on the EAST tokamak using a specially designed, instrumented test limiter acting as a proxy for the FW panel geometry. Carbon coated molybdenum plates forming the limiter front surface were exposed to the outer midplane boundary plasma of helium discharges using the new Material and Plasma Evaluation System (MAPES). Net erosion and deposition patterns are estimated using ion beam analysis to measure the carbon layer thickness variation across the surface after exposure. The highest erosion of about 0.8 μm is found near the midplane, where the surface is closest to the plasma separatrix. No net deposition above the measurement detection limit was found on the proxy wall element, even in shadowed regions. The measured 2D surface erosion distribution has been modelled with the 3D Monte Carlo code ERO, using the local plasma parameter measurements together with a diffusive transport assumption. Excellent agreement between the experimentally observed net erosion and the modelled erosion profile has been obtained.

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation.

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As part of Sandia's program to simulate the effect of displacement damage on operation of heterojunction bipolar transistors (HBTs), we are examining the formulation in 1-D of band-to-band (bb) and band-to-trap (b-t) carrier tunneling.

We studied the desorption of D implanted into Be with a superficial oxide layer. We found that the different oxide thicknesses and implantation at different energies resulted in a strong variation of the fraction stopped within the oxide layer. Thermal desorption of D was subsequently performed, intermitted by nuclear reaction analysis for assessment of the D depth distributions and total retained amounts. Moreover, for the conditions, where part of the D was deposited in the Be substrate, a sharp decrease of the retained amount of D occurs around 200 °C. This is attributed to the release from metallic Be. Correspondingly, the D and O depth profiles show that above 200 °C the remaining D is only retained in the BeO layer. Apparently, the superficial BeO layer does not act as a diffusion barrier for D that is released from the metallic substrate. The retained amount of D deposited within the BeO layer decreases steadily and is not completely released at 350 °C, the foreseen bake-out temperature in ITER.

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A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

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