Publications

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Radiation-hard high-voltage vertical GaN p-n diodes are being developed for use in power electronics subjected to ionizing radiation. We present a comparison of the measured and simulated photocurrent response of diodes exposed to ionizing irradiation with 70 keV and 20 MeV electrons at dose rates in the range of 1.4× 107 - 5.0× 108 rad(GaN)/s. The simulations correctly predict the trend in the measured steady-state photocurrent and agree with the experimental results within a factor of 2. Furthermore, simulations of the transient photocurrent response to dose rates with uniform and non-uniform ionization depth profiles uncover the physical processes involved that cannot be otherwise experimentally observed due to orders of magnitude larger RC time constant of the test circuit. The simulations were performed using an eXploratory Physics Development code developed at Sandia National Laboratories. The code offers the capability to include defect physics under more general conditions, not included in commercially available software packages, extending the applicability of the simulations to different types of radiation environments.

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

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Two methods are examined for extending the life of tritium targets for production of 14 MeV neutrons by the 3H(2H,n)4He nuclear reaction. With thick film targets the neutron production rate decreases with time due to isotope exchange of tritium in the film with implanted deuterium. In this case, the target life is maximized by operating the target at elevated temperature where the implanted deuterium mixes by thermal diffusion throughout the entire thickness of the film. The number of neutrons obtained from a target is then proportional to the initial tritium content of the film. A novel thin-film target design was also developed and tested. With these thin-film targets, the incident deuterium is implanted through the tritide into the underlying substrate material. A thin permeation barrier layer between the tritide film and substrate, reduces the rate of tritium loss from the tritide film. Good thin-film target performance was achieved using W and Fe for the barrier and substrate materials respectively. Thin-film targets were fabricated and tested and shown to produce similar number of neutrons as thick-film targets while using only a small fraction of the amount of tritium.

Single crystalline W (tungsten) samples irradiated at 633, 963 and 1073 K by neutrons to a damage level of 0.1 dpa were exposed to a high-flux D (deuterium) plasma at 673, 873 and 973 K, respectively, in TPE (Tritium Plasma Experiment) at INL (Idaho National Laboratory). Deuterium desorption was analyzed by TDS (Thermal Desorption Spectroscopy), and D depth profiles were determined by NRA (Nuclear Reaction Analysis) at SNL (Sandia National Laboratories). HIDT (Hydrogen Isotope Diffusion and Trapping) simulation code was applied to evaluate D behavior for neutron-damaged W at higher temperature. The D retention at depths up to 3 μm for the neutron-damaged sample at 673 K was two orders of magnitude larger than that for undamaged tungsten, and its D desorption spectrum had a single broad stage at around 900 K. As the neutron irradiation/plasma exposure temperature increased, D retention was largely reduced, and the desorption temperature was shifted to higher temperatures above 1100 K. The D depth profiles by NRA also showed D migration toward bulk by higher temperature irradiation, compared to undamaged W. The HIDT simulation indicated that the major binding energy of D was changed from 1.43 eV to 2.07 eV at higher neutron irradiation and plasma exposure temperatures, suggesting that some vacancies and small vacancy clusters would aggregate to form larger voids, or depopulation of weak traps at high D plasma exposure temperatures. It can be said that more stable trapping sites played dominant roles in the D retention at higher neutron irradiation and plasma exposure temperature. The binding energy by HIDT simulation was almost consistent with the reported value by TMAP, but the consideration of not only total D retention measured by TDS but also D depth profile by NRA led to the more accurate D behavior in neutron-damaged W.

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A recently completed LDRD project has provided a new facility at Sandia for testing effects of energetic neutrons on electronic components. 14 MeV neutrons are produced with a deuterium ion beam onto a thin-film tritide target. The goal of the project was to increase the neutron fluence to levels needed for radiation effects testing and qualification. This goal was achieved through two technical advances. First, a new multi-layer target concept was developed to reduce the rate of tritium loss from the target by isotope exchange, thereby reducing tritium usage and increasing target lifetime. The second advance was the construction of a new test chamber designed to maximize neutron flux at test locations. Together, these increased the available neutron fluence by several orders of magnitude. This new capability is being used in tests for Sandia nuclear weapon programs, evaluation of commercial parts such as highly-scaled CMOS SRAM lCs, and tests of new devices under development at Sandia such as lll-V HBTs, gallium nitride high-voltage diodes, and for fundamental studies of physical mechanisms of device failure.

Accurate predictions of device performance in 14-MeV neutron environments rely upon understanding the recoil cascades that may be produced. Recoils from 14-MeV neutrons impinging on both gallium nitride (GaN) and gallium arsenide (GaAs) devices were modeled and compared to the recoil spectra of devices exposed to 14-MeV neutrons. Recoil spectra were generated using nuclear reaction modeling programs and converted into an ionizing energy loss (IEL) spectrum. We measured the recoil IEL spectra by capturing the photocurrent pulses produced by single neutron interactions with the device. Good agreement, with a factor of two, was found between the model and the experiment under strongly depleted conditions. However, this range of agreement between the model and the experiment decreased significantly when the bias was removed, indicating partial energy deposition due to cascades that escape the active volume of the device not captured by the model. Consistent event rates across multiple detectors confirm the reliability of our neutron recoil detection method.

Experiments carried out on DIII-D using a novel setup of isotopic tungsten (W) sources in the outer divertor have characterized how the W leakage from this region depends on both the exact source location and edge-localized mode (ELM) behavior. The sources are toroidally-symmetric and poloidally-localized to two regions: (1) the outer strike point (OSP) with natural abundance of W isotopes; and (2) the far-target with highly-enriched 182W isotopes. With the use of a dual-faced collector probe (CP) in the main scrape-off layer (SOL) near the outside midplane and source-rate spectroscopy, a proxy for divertor impurity leakage is developed. Using this proxy, it is found that for the OSP W location, there is a nearly linear increase of leakage with the power across the separatrix (PSEP), which is consistent with the effect of an increased upstream ion temperature parallel gradient force in the near-SOL; trends in the pedestal density and collisionality are also seen. Conversely, it is found that for the far-target W location leakage falls off rapidly as PSEP increases and ELM size decreases, which is suggestive that ELM size plays a role in the leakage from this location. Indications for main SOL W contamination is evidenced by the measurement of large deposition asymmetries on the two opposite CP faces. These measurements are coupled with interpretive modeling showing SOL W accumulation near the separatrix furthest from both targets driven by forces parallel to the magnetic field. This experimental setup, together with the target and upstream W measurements, provides information on the transport from different divertor W source locations and leakage. These studies help to elucidate the physics driving divertor impurity source rates and leakage, with and without ELMs, and provide better insight on the link in the chain connecting wall impurity sources to core impurity levels in magnetic fusion devices.

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This report documents work done at the Sandia Ion Beam Laboratory to develop a capability to produce 14 Me neutrons at levels sufficient for testing radiation effects on electronic materials and components. The work was primarily enabled by a laboratory directed research and development (LDRD) project. The main elements of the work were to optimize target lifetime, test a new thin- film target design concept to reduce tritium usage, design and construct a new target chamber and beamline optimized for high-flux tests, and conduct tests of effects on electronic devices and components. These tasks were all successfully completed. The improvements in target performance and target chamber design have increased the flux and fluence of 14 MV neutrons available at the test location by several orders of magnitude. The outcome of the project is that a new capability for testing radiation-effects on electronic components from 14 MeV neutrons is now available at Sandia National Laboratories. This capability has already been extensively used for many qualification and component evaluation and development tests.

One of the main advantages of using tungsten (W) as a plasma facing material (PFM) is its low uptake and retention of tritium. However, in high purity (ITER grade) W, hydrogenic retention increases significantly with neutron-induced displacement damage in the W lattice. This experiment examines an alternative W grade PFM, ultra-fine grain (UFG) W, to compare its retention properties with ITER grade W after 12 MeV Si ion displacement damage up to 0.6 dpa (displacements per atom.) Following exposure to plasma in the DIII-D divertor, D retention was then assessed with Nuclear Reaction Analysis (NRA) depth profiling up to 3.5 µm and thermal desorption spectrometry (TDS). Undamaged specimens were also included in our test matrix for comparison. For all samples, D release peaks were observed during TDS at approximately 200 °C and 750 °C. For the ITER-grade W specimens, the intensity of the 750 °C release peak was more pronounced for specimens that had been pre-damaged.

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