Publications

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With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

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In this paper we provide explanations to the complex growth phenomena of GaN heteroepitaxy on nonpolar orientations using the concept of kinetic Wulff plots (or v-plots). Quantitative mapping of kinetic Wulff plots in polar, semipolar, and nonpolar angles are achieved using a differential measurement technique from selective area growth. An accurate knowledge of the topography of kinetic Wulff plots serves as an important stepping stone toward model-based control of nonpolar GaN growth. Examples are illustrated to correlate growth dynamics based on the kinetic Wulff plots with commonly observed features, including anisotropic nucleation islands, highly striated surfaces, and pentagonal or triangular pits.

Artificial lighting for general illumination purposes accounts for over 8% of global primary energy consumption. However, the traditional lighting technologies in use today, i.e., incandescent, fluorescent, and high-intensity discharge lamps, are not very efficient, with less than about 25% of the input power being converted to useful light. Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next years. This efficiency is significantly higher than that of traditional lighting technologies, with the potential to enable a marked reduction in the rate of world energy consumption., There is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even greater world energy savings. The maximum achievable luminous efficacy for a solid-state lighting source depends on many different physical parameters, for example the color rendering quality that is required, the architecture employed to produce the component light colors that are mixed to produce white, and the efficiency of light sources producing each color component. In this article, we discuss in some detail several approaches to solid-state lighting and the maximum luminous efficacy that could be attained, given various constraints such as those listed above.

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We present a combined experimental and modeling study of the dependence of solution-based zinc oxide (ZnO) selective-area growth rates on pattern dimension. Selective growth is achieved by patterning a portion of the substrate with an organic template that inhibits growth. The density of ZnO nanorods and the mass grown per unit area of exposed surface increases as the distance between the exposed growth regions is increased and as the width of the exposed lines is decreased. A 2-D model was developed to calculate selective growth at the exposed surface regions, the loss of reactant material due to a competing reaction in solution, liquid-phase and surface diffusive mass transport to (or on) the growth surface, and the ZnO growth reaction at the surface. To explain the experimental results, we found it necessary to include a reaction by-product in the chemistry model, the desorption of which is the rate limiting step. A relatively simple, three-step reaction mechanism, combined with the species mass transport model, provides a good, semi-quantitative description of the experimental observations in the selective-area growth of ZnO from supersaturated solutions.

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