Publications

Abstract not provided.

Impacts of silicon, carbon, and oxygen interfacial impurities on the performance of high-voltage vertical GaN-based p–n diodes are investigated. The results indicate that moderate levels (≈5 × 10¹⁷ cm^-3) of all interfacial impurities lead to reverse blocking voltages (V_b) greater than 200 V at 1 μA cm^-2 and forward leakage of less than 1 µA cm^-2 at 1.7 V. At higher interfacial impurity levels, the performance of the diodes becomes compromised. Herein, it is concluded that each impurity has a different effect on the device performance. For example, a high carbon spike at the junction correlates with high off-state leakage current in forward bias (≈100× higher forward leakage current compared with a reference diode), whereas the reverse bias behavior is not severely affected (> 200 V at 1 μA cm^-2). High silicon and oxygen spikes at the junction strongly affect the reverse leakage currents (≈ 1–10 V at 1 μA cm^-2). Regrown diodes with impurity (silicon, oxygen, and carbon) levels below 5 × 10¹⁷ cm^-3 show comparable forward and reverse results with the reference continuously grown diodes. The effect of the regrowth interface position relative to the metallurgical junction on the diode performance is also discussed.

Abstract not provided.

Abstract not provided.

The impact of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased significantly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) techniques were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.

Abstract not provided.

Abstract not provided.

The aim and scope of this project was the development of a capability to prepare high-quality, epitaxial beta gallium oxide films by oxide reactive molecular-beam epitaxy. The purpose was to demonstrate that beta gallium oxide could be grown by such a method using Sandia’s existing oxide molecular-beam epitaxy instrument. The key activity in this project was the installation of a gallium oxide capability on the Sandia instrument. This required the acquisition of several custom items for the instrument, including: a gallium effusion cell, appropriate cell power supplies and temperature controllers, a shutter to block beam flux, installation of an existing ozone generator with a directed gas nozzle and controlled leak valve, and re-routing the chilled water system to accommodate the cell. In addition, beta gallium oxide single crystals were acquired and their surfaces characterized by reflection high energy electron diffraction.

Gate length dependent (80 nm–5000 mm) radio frequency measurements to extract saturation velocity are reported for Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistors fabricated into radio frequency devices using electron beam lithography. Direct current characterization revealed the threshold voltage shifting positively with increasing gate length, with devices changing from depletion mode to enhancement mode when the gate length was greater than or equal to 450 nm. Transconductance varied from 10 mS/mm to 25 mS/mm, with the 450 nm device having the highest values. Maximum drain current density was 268 mA/mm at 10 V gate bias. Scattering-parameter characterization revealed a maximum unity gain bandwidth (fT) of 28 GHz, achieved by the 80 nm gate length device. A saturation velocity value of 3.8 × 106 cm/s, or 35% of the maximum saturation velocity reported for GaN, was extracted from the fT measurements.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

AlGaN-channel high electron mobility transistors (HEMTs) were operated as visible- and solar-blind photodetectors by using GaN nanodots as an optically active floating gate. The effect of the floating gate was large enough to switch an HEMT from the off-state in the dark to an on-state under illumination. This opto-electronic response achieved responsivity > 108 A/W at room temperature while allowing HEMTs to be electrically biased in the offstate for low dark current and low DC power dissipation. The influence of GaN nanodot distance from the HEMT channel on the dynamic range of the photodetector was investigated, along with the responsivity and temporal response of the floating gate HEMT as a function of optical intensity. The absorption threshold was shown to be controlled by the AlN mole fraction of the HEMT channel layer, thus enabling the same device design to be tuned for either visible- or solar-blind detection.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Enhancement-mode Al0.7Ga0.3N-channel high electron mobility transistors (HEMTs) were achieved through a combination of recessed etching and fluorine ion deposition to shift the threshold voltage (VTH) relative to depletion-mode devices by +5.6 V to VTH = +0.5 V. Accounting for the threshold voltage shift (ΔVTH), current densities of approximately 30 to 35 mA/mm and transconductance values of 13 mS/mm were achieved for both the control and enhancement mode devices at gate biases of 1 V and 6.6 V, respectively. Little hysteresis was observed for all devices, with voltage offsets of 20 mV at drain currents of 1.0 × 10-3mA/mm. Enhancement-mode devices exhibited slightly higher turn-on voltages (+0.38 V) for forward bias gate currents. Piecewise evaluation of a threshold voltage model indicated a ΔVTH of +3.3 V due to a gate recess etching of 12 nm and an additional +2.3 V shift due to fluorine ions near the AlGaN surface.

Commercial InGaN/GaN light emitting diodes continue to suffer from efficiency droop at high current densities, and urgently require enhanced structural-optical toolsets for active region characterization. In our work, we measure delayed (tens of seconds) cathodoluminescence which is influenced by carrier transport and deep level defects. Further, we observe that drops in efficiency are not correlated with quantum well (QW) width fluctuations. To explain the rise dynamics, we propose a model involving filling of deep level defects and simultaneous reduction of built-in field within the multi-QW active region. These measurements yield insights into carrier transport, efficiency-reducing defects, and QW band structure.

This work exhibits the ability to shift the threshold voltage of an Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al0.3Ga0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 μm gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high ION,MAX/IOFF,MIN ratio of >109, and exceptionally low gate leakage current of 10-6 mA/mm even under high forward bias of Vgs = 8 V.

Abstract not provided.

Abstract not provided.

Abstract not provided.