Publications

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This work demonstrates a novel approach to ultrahigherature mechanical testing using a combination of in situ nanomechanical testing and localized laser heating. The methodology is applied to characterizing and testing initially nanograined 10 mol % Sc2O3-stabilized ZrO2 up to its melting temperature. The results suggest that the lowerature strength of nanograined, d < 50 nm, oxides is not influenced by creep. Tensile fracture of ZrO2 bicrystals produce a weakerature dependence suggesting that grain boundary energy dominates brittle fracture of grain boundaries even at high homologous temperatures; for example, T = 2050 °C or T ≈ 77% Tmelt. The maximum temperature for mechanical testing in this work is primarily limited by the instability of the sample, due to evaporation or melting, enabling a host of new opportunities for testing materials in the ultrahigherature regime.

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Despite the exceptional thermal and mechanical functionalities of diamond, its superlative properties are highly subject to the presence of point defects, dislocations, and interfaces. In this study, polycrystalline diamond is ion implanted with C3+, N3+, and O3+ ions at an energy of 16.5 MeV, producing an amorphous layer at the projected range and a damaged crystalline region between the surface and amorphous layer. Using time-domain thermoreflectance in combination with thermal penetration depth calculations based upon the multilayer heat diffusion equation, it is determined that reductions in the thermal conductivity can span nearly two orders of magnitude while still maintaining a polycrystalline structure within the regions thermally probed. Dynamical diffraction simulations of high-resolution x-ray diffraction measurements demonstrate the formation of a strained layer localized at the end of range, with much lower levels of strain near the surface. Furthermore, within the polycrystalline region above the amorphous layer, the average number of displacements-per-atom from the ion irradiation is found to be <1%, with mass impurity concentrations much less than 1%. These low defect concentrations within the thermally probed region demonstrate the remarkably large impact that dilute levels of defects from the ion implantation can have on the thermal conductivity of diamond.

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High-density growth nanotwins enable high-strength and good ductility in metallic materials. However, twinning propensity is greatly reduced in metals with high stacking fault energy. In this study, we adopted a hybrid technique coupled with template-directed heteroepitaxial growth method to fabricate single-crystal-like, nanotwinned (nt) Ni. The nt Ni primarily contains hierarchical twin structures that consist of coherent and incoherent twin boundary segments with few conventional grain boundaries. In situ compression studies show the nt Ni has a high flow strength of ~2 GPa and good deformability. Moreover, the nt Ni has superb corrosion behavior due to the unique twin structure in comparison to coarse grained and nanocrystalline counterparts. The hybrid technique opens the door for the fabrication of a wide variety of single-crystal-like nt metals with unique mechanical and chemical properties.

Mitigating corrosion remains a daunting challenge due to localized, nanoscale corrosion events that are poorly understood but are known to cause unpredictable variations in material longevity. Here, the most recent advances in liquid-cell transmission electron microscopy were employed to capture the advent of localized aqueous corrosion in carbon steel at the nanoscale and in real time. Localized corrosion initiated at a triple junction formed by a solitary cementite grain and two ferrite grains and then continued at the electrochemically-active boundary between these two phases. With this analysis, we identified facetted pitting at the phase boundary, uniform corrosion rates from the steel surface, and data that suggest that a re-initiating galvanic corrosion mechanism is possible in this environment. These observations represent an important step toward atomically defining nanoscale corrosion mechanisms, enabling the informed development of next-generation inhibition technologies and the improvement of corrosion predictive models.

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Knowing when, why, and how materials evolve, degrade, or fail in radiation environments is pivotal to a wide range of fields from semiconductor processing to advanced nuclear reactor design. A variety of methods, including optical and electron microscopy, mechanical testing, and thermal techniques, have been used in the past to successfully monitor the microstructural and property evolution of materials exposed to extreme radiation environments. Acoustic techniques have also been used in the past for this purpose, although most methodologies have not achieved widespread adoption. However, with an increasing desire to understand microstructure and property evolution in situ, acoustic methods provide a promising pathway to uncover information not accessible to more traditional characterization techniques. This work highlights how two different classes of acoustic techniques may be used to monitor material evolution during in situ ion beam irradiation. The passive listening technique of acoustic emission is demonstrated on two model systems, quartz and palladium, and shown to be a useful tool in identifying the onset of damage events such as microcracking. An active acoustic technique in the form of transient grating spectroscopy is used to indirectly monitor the formation of small defect clusters in copper irradiated with self-ions at high temperature through the evolution of surface acoustic wave speeds. Here, these studies together demonstrate the large potential for using acoustic techniques as in situ diagnostics. Such tools could be used to optimize ion beam processing techniques or identify modes and kinetics of materials degradation in extreme radiation environments.

We investigate the effects of ion irradiation on AlGaN/GaN high electron mobility electron transistors using in-situ transmission electron microscopy. The experiments are performed inside the microscope to visualize the defects, microstructure and interfaces of ion irradiated transistors during operation and failure. Experimental results indicate that heavy ions such as Au4+ can create a significant number of defects such as vacancies, interstitials and dislocations in the device layer. It is hypothesized that these defects act as charge traps in the device layer and the resulting charge accumulation lowers the breakdown voltage. Sequential energy dispersive X-ray spectroscopy mapping allows us to track individual chemical elements during the experiment, and the results suggest that the electrical degradation in the device layer may originate from oxygen and nitrogen vacancies.

The influence of He ion radiation on GaAs thermal conductivity was investigated using TDTR and the PGM. We found that damage in the shallow defect only regions of the radiation profile scattering phonons with a frequency to the fourth dependence due to randomly distributed Frankel pairs. Damage near the end of range however, scatters phonons with a second order frequency dependence due to the cascading defects caused by the rapid radiation energy loss at the end of range resulting in defect clusters. Using the PGM and experimental thermal conductivity trends it was then possible to estimate the defect recombination rate and size of defect clusters. The methodology developed here results in a powerful tool for interrogating radiation damage in semiconductors.

Irradiation induced creep (IIC) compliance in NiCoFeCrMn high entropy alloys is measured as a function of grain size (30 < x < 80 nm) and temperature (23–500 °C). For 2.6 MeV Ag³⁺ irradiation at a dose rate of 1.5×10^–3 dpa^–1s^–1 the transition from the recombination to sink limited regimes occurs at ~ 100 °C. In the sink-limited regime, the IIC compliance scales inversely with grain size, consistent with a recently proposed model for grain boundary IIC. The thermal creep rate is also measured; it does not become comparable to the IIC rate, however, until ~ 650 °C. Here, the results are discussed in context of defect kinetics in irradiated HEA systems.

The effects of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are investigated using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10-100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, based on the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.

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We present kilohertz-scale video capture rates in a transmission electron microscope, using a camera normally limited to hertz-scale acquisition. An electrostatic deflector rasters a discrete array of images over a large camera, decoupling the acquisition time per subframe from the camera readout time. Total-variation regularization allows features in overlapping subframes to be correctly placed in each frame. Moreover, the system can be operated in a compressive-sensing video mode, whereby the deflections are performed in a known pseudorandom sequence. Compressive sensing in effect performs data compression before the readout, such that the video resulting from the reconstruction can have substantially more total pixels than that were read from the camera. This allows, for example, 100 frames of video to be encoded and reconstructed using only 15 captured subframes in a single camera exposure. We demonstrate experimental tests including laser-driven melting/dewetting, sintering, and grain coarsening of nanostructured gold, with reconstructed video rates up to 10 kHz. The results exemplify the power of the technique by showing that it can be used to study the fundamentally different temporal behavior for the three different physical processes. Both sintering and coarsening exhibited self-limiting behavior, whereby the process essentially stopped even while the heating laser continued to strike the material. We attribute this to changes in laser absorption and to processes inherent to thin-film coarsening. In contrast, the dewetting proceeded at a relatively uniform rate after an initial incubation time consistent with the establishment of a steady-state temperature profile.

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