Silicon-based Infrared Metamaterials with Ultra-Sharp Fano Resonances
Nature Communications
Abstract not provided.
Publications
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Jump to search filtersHigh-Q terahertz Fano resonance with extraordinary transmission in concentric ring apertures
Optics Express
Abstract not provided.
Merging Magnetic and Electric Resonances for All-Dielectric NanoantennaArrays
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Unidirectional Scattering by Tailoring Magnetic and Electric Resonances in All-Dielectric Nanoantennas
Abstract not provided.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot
Abstract not provided.
Tailoring the electric and magnetic response of all-dielectric nanodiscs
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
Realization of Tellurium-based all dielectric optical metamaterials using a multi-cycle deposition-etch process
2013 Conference on Lasers and Electro-Optics, CLEO 2013
Tellurium dielectric resonator metamaterials were fabricated using a newly developed multi-cycle deposition-etch process. Deposition and etching of Tellurium were studied in detail. All the samples showed two transmission minima corresponding to magnetic and electric dipole resonances. © 2013 The Optical Society.
Realization of Tellurium-based all Dielectric Optical Metamaterials using a Multi-cycle Deposition-etch Process
Abstract not provided.
Merging Magnetic and Electric Resonances for All-Dielectric Nanoantenna Arrays
Abstract not provided.
Realization of tellurium-based all dielectric optical metamaterials using a multi-cycle deposition-etch process
Applied Physics Letters
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
STM fabrication of double quantum dot charge qubits for adiabatic quantum computing
Abstract not provided.
Electrometer sensitivity for spin readout
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Enhancement-mode buried strained-silicon channel quantum dot with tunable lateral geometry
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
Enhancement-mode buried strained-silicon channel double quantum dot
Abstract not provided.
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