Low Energy Radiation Transport Applied to Secondary Electron Emission
Abstract not provided.
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Jump to search filtersEffects of High Dose Rate Ionizing Radiation on Fused Silica and Sapphire Films
IEEE Transactions on Nuclear Science
Abstract not provided.
MULTI-FILAMENT PCSS MODULES TO REPLACE HIGH CURRENT PULSED POWER SWITCHES
Abstract not provided.
ELECTRICAL BREAKDOWN PHENOMENA INVOLVING MATERIAL INTERFACES
Abstract not provided.
HIGH-VOLTAGE ATMOSPHERIC BREAKDOWN ACROSS INTERVENING RUTILE DIELECTRICS
Abstract not provided.
Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices
Abstract not provided.
Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices
Abstract not provided.
High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices
Abstract not provided.
MULTI-FILAMENT PCSS MODULES TO REPLACE HIGH CURRENT PULSED POWER SWITCHES
Abstract not provided.
ELECTRICAL BREAKDOWN PHENOMENA INVOLVING MATERIAL INTERFACES
Abstract not provided.
HIGH-VOLTAGE ATMOSPHERIC BREAKDOWN ACROSS INTERVENING RUTILE DIELECTRICS
Abstract not provided.
Effects ofhigh dose rate ionizing radiation on fused silica and sapphire films
Abstract not provided.
Experimental Investigation of Arc Discharges in the Presence of Advanced Material Interfaces in Atmospheric Gas
Abstract not provided.
Some Basic Mechanisms in Memristor Calculations
Abstract not provided.
Effect of High Dose Rate Electron Beam Exposures on the Electrical Conductivity of Fused Silica and Sapphire Films
Abstract not provided.
The Effects of Pulsed Radiation on Fused Silica and Sapphire Films
Abstract not provided.
Effect of High Dose Rate Electron Beam Exposures on the Electrical Conductivity of Fused Silica and Sapphire Films
Abstract not provided.
Measurement and identification of three contributing charge terms in negative bias temperature instability
ECS Transactions
The increase in the magnitude of the threshold voltage of a positive-channel metal oxide semiconductor (PMOS) under negative gate biasing (negative bias temperature instability) is attributed to the build-up of charge in the gate insulator. We have studied the charging and discharging of nitrided SiO2 gate insulator field effect transistors and through the use of pseudo-DC and pulsed stressing methods, have extracted, at least, three charging components. These components are (a) the charging of interface states at the semiconductor/insulator boundary, (b) dynamically recoverable positive charging in the bulk' of the insulator, and (c) positive charging in the insulator, which can be eliminated' only by application of a positive electric field across the insulator. It is proposed that the charge elimination' in (c) arises via a charge neutralization process involving electron capture at switching traps, as opposed to de-trapping, and that this can be reversed by the application of a small negative field. © The Electrochemical Society.
Memristor Theory: Inclusion of Chemical Reactions
Abstract not provided.
Effect of High Dose Rate Electron Beam Exposures on the Electrical Conductivity in Fused Silica and Sapphire Films
Abstract not provided.
Extraction of recoverable and permanent positive charge trapping resulting from negative bias temperature instability in p-channel field effect transistors
Abstract not provided.
Interface state and recoverable components of NBTI determined by alternating stress measurements
Proposed for publication in IEEE Electron Device Letters.
Abstract not provided.
Charge trapping/de-trapping in nitrided SiO2 dielectrics and its influence on device reliability
Abstract not provided.
Secondary Electron Emission (SEE) Calculations
Abstract not provided.
Modeling low dose rate effects in shallow trench isolation oxides
IEEE Transactions on Nuclear Science
Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations. © 2011 IEEE.
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