Publications

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Whether structural or electronic, all solder joints must provide the necessary level of reliability for the application. The Part 1 report examined the effects of filler metal properties and the soldering process on joint reliability. Filler metal solderability and mechanical properties, as well as the extents of base material dissolution and interface reaction that occur during the soldering process, were shown to affect reliability performance. The continuation of this discussion is presented in this Part 2 report, which highlights those factors that directly affect solder joint reliability. There is the growth of an intermetallic compound (IMC) reaction layer at the solder/base material interface by means of solid-state diffusion processes. In terms of mechanical response by the solder joint, fatigue remains as the foremost concern for long-term performance. Thermal mechanical fatigue (TMF), a form of low-cycle fatigue (LCF), occurs when temperature cycling is combined with mismatched values of the coefficient of thermal expansion (CTE) between materials comprising the solder joint “system.” Vibration environments give rise to high-cycle fatigue (HCF) degradation. Although accelerated aging studies provide valuable empirical data, too many variants of filler metals, base materials, joint geometries, and service environments are forcing design engineers to embrace computational modeling to predict the long-term reliability of solder joints.

Soldering technology has made tremendous strides in the past half-century. Whether structural or electronic, all solder joints must provide a level of reliability that is required by the application. This Part 1 report examines the effects of filler metal properties and soldering process on joint reliability. Solder alloy composition must have the appropriate melting and mechanical properties that suit the product's assembly process(es) and use environment. The filler metal must also optimize solderability (wetting-and-spreading) to realize the proper joint geometry. Here, the soldering process also affects joint reliability. The choice of flux and thermal profile support the solderability performance of the molten filler metal to successfully fill the gap and complete the fillet.

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Low temperature cofired ceramic (LTCC) technology has proven itself in military/space electronics, wireless communication, microsystems, medical and automotive electronics, and sensors. The use of LTCC for high frequency applications is appealing due to its low losses, design flexibility and packaging and integration capability. The LTCC thick film process is summarized including some unconventional process steps such as feature machining in the unfired state and thin film definition of outer layer conductors. The LTCC thick film process was characterized to optimize process yields by focusing on these factors: 1) Print location, 2) Print thickness, 3) Drying of tapes and panels, 4) Shrinkage upon firing, and 5) Via topography. Statistical methods were used to analyze critical process and product characteristics in the determination towards that optimization goal.

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Tin (Sn) whiskers are not a recent development. Studies in the late 1930’s investigated thin filaments that grew spontaneously from Sn coatings used for the corrosion protection of electronic hardware. It was soon recognized that these Sn filaments, or whiskers, could create short circuits in the same electronic equipment. Figure 1a illustrates whisker growth in the hole of a printed circuit board having an immersion Sn surface finish. The engineering solution was to contaminate the Sn with > 3 wt.% of lead (Pb). The result was that whisker growth was replaced with hillock formation (Fig. 1b) that posed a minimal reliability concern to electrical circuits. Today, Pb-containing finishes are being replaced with pure Sn coatings to meet environmental restrictions on Pb use. The same short-circuit concerns have been raised, once again, with respect to Sn whiskers.

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Tin (Sn) whiskers are not a recent development. Studies in the late 1930’s investigated thin filaments that grew spontaneously from Sn coatings used for the corrosion protection of electronic hardware. It was soon recognized that these Sn filaments,or whiskers, could create short circuits in the same electronic equipment. Figure 1a illustrates whisker growth in the hole of a printed circuit board having an immersion Sn surface finish. The engineering solution was to contaminate the Sn with > 3wt.% of lead (Pb). The result was that whisker growth was replaced with hillock formation (Fig. 1b) that posed a minimal reliability concernto electrical circuits. Today, Pb-containing finishes are being replaced with pure Sn coatings to meet environmental restrictions on Pb use. The same short-circuit concerns have been raised, once again, with respect to Sn whiskers. The present authors have taken the approach that, in order to develop more widely applicable, first-principles strategies to mitigate Sn whisker formation, it is necessary to understand the fundamental mechanism(s) and rate kinetics underlying their development. Numerous mechanisms have been proposed by other authors to describe whisker growth, including static recrystallization by Boguslavsky and Bush.

Our study was performed to validate a first-principles model for whisker and hillock formation based on the cyclic dynamic recrystallization (DRX) mechanism in conjunction with long-range diffusion. The test specimens were evaporated Sn films on Si having thicknesses of 0.25 μm, 0.50 μm, 1.0 μm, 2.0 μm, and 4.9 μm. Air annealing was performed at 35°C, 60°C, 100°C, 120°C, or 150°C over a time duration of 9 days. The stresses, anelastic strains, and strain rates in the Sn films were predicted by a computational model based upon the constitutive properties of 95.5Sn-3.9Ag-0.6Cu (wt.%) as a surrogate for pure Sn. The cyclic DRX mechanism and, in particular, whether long whiskers or hillocks were formed, was validated by comparing the empirical data against the three hierarchal requirements: (1) DRX to occur at all: εc = A D o m Z n , (2) DRX to be cyclic: D o < 2D r, and (3) Grain boundary pinning (thin films): h versus d. Continuous DRX took place in the 2.0-μm and 4.9-μm films that resulted in short stubby whiskers. Depleted zones, which resulted solely from a tensile stress-driven diffusion mechanism, confirmed the pervasiveness of long-range diffusion so that it did not control whisker or hillock formation other than a small loss of activity by reduced thermal activation at lower temperatures. Furthermore, a first-principles DRX model paves the way to develop like mitigation strategies against long whisker growth.

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