Publications

As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.

Abstract not provided.

The Roadrunner ion trap is a micro-fabricated surface-electrode ion trap based on silicon technology. This trap has one long linear section and a junction to allow for chain storage and reconfiguration. It uses a symmetric rf-rail design with segmented inner and outer control electrodes and independent control in the junction arms. The trap is fabricated on Sandia’s High Optical Access (HOA) platform to provide good optical access for tightly focused laser beams skimming the trap surface. It is packaged on our custom Bowtie-102 ceramic pin or land grid array packages using a 2.54 mm pitch for backside pins or pads. This trap also includes an rf sensing capacitive divider and tungsten wires for heating or temperature monitoring. The Roadrunner builds on the knowledge gained from previous surface traps fabricated at Sandia while improving ion control capabilities.

The Defense Advanced Research Project Agency has identified a need for low-standby-power systems which react to physical environmental signals in the form of an electrical wakeup signal. To address this need, we design piezoelectric aluminum nitride based microelectromechanical resonant accelerometers that couple with a near-zero power, complementary metal-oxide-semiconductor application specific integrated circuit. The piezoelectric accelerometer operates near resonance to form a passive mechanical filter of the vibration spectrum that targets a specific frequency signature. Resonant vibration sensitivities as large as 490 V/g (in air) are obtained at frequencies as low as 43 Hz. The integrated circuit operates in the subthreshold regime employing current starvation to minimize power consumption. Two accelerometers are coupled with the circuit to form the wakeup system which requires only 5.25 nW before wakeup and 6.75 nW after wakeup. The system is shown to wake up to a generator signal and reject confusers in the form of other vehicles and background noise.

The defense community desires low-power sensors deployed around critical assets for intrusion detection. A piezoelectric microelectromechanical accelerometer is coupled with a complementary metal-oxide-semiconductor comparator to create a near-zero power wakeup system. The accelerometer is designed to operate at resonance and employs aluminum nitride for piezoelectric transduction. At a target frequency of 160 Hz, the accelerometer achieves sensitivities as large as 26 V/g. The system is shown to require only 5.4 nW of power before and after latching. The combined system is shown to wake up to a target frequency signature of a generator while rejecting background noise as well as non-target frequency signatures.