While it made sense for historical reasons to develop different interfaces and protocols for memory channels, CPU to CPU interactions, and I/O devices, ongoing developments in the computer industry are leading to more converged requirements and physical implementations for these interconnects. As it becomes increasingly common for advanced components to contain a variety of computational devices as well as memory, the distinction between processors, memory, accelerators, and I/O devices become s increasingly blurred. As a result, the interface requirements among such components are converging. There is also a wide range of new disruptive technologies that will impact the computer market in the coming years , including 3D integration and emerging NVRAM memory. Optimal exploitation of these technologies cannot be done with the existing memory, storage, and I/O interface standards. The computer industry has historically made major advances when industry players have been able to add innovation behind a standard interface. The standard interface provides a large market for their products and enables relatively quick and widespread adoption. To enable a new wave of innovation in the form of advanced memory products and accelerators, we need a new standard interface explicitly designed to provide both the performance and flexibility to support new system integration solutions.
While it made sense for historical reasons to develop different interfaces and protocols for memory channels, CPU to CPU interactions, and I/O devices, ongoing developments in the computer industry are leading to more converged requirements and physical implementations for these interconnects. As it becomes increasingly common for advanced components to contain a variety of computational devices as well as memory, the distinction between processors, memory, accelerators, and I/O devices becomes increasingly blurred. As a result, the interface requirements among such components are converging. There is also a wide range of new disruptive technologies that will impact the computer market in the coming years, including 3D integration and emerging NVRAM memory. Optimal exploitation of these technologies cannot be done with the existing memory, storage, and I/O interface standards. The computer industry has historically made major advances when industry players have been able to add innovation behind a standard interface. The standard interface provides a large market for their products and enables relatively quick and widespread adoption. To enable a new wave of innovation in the form of advanced memory products and accelerators, we need a new standard interface explicitly designed to provide both the performance and flexibility to support new system integration solutions
Density Functional Theory (DFT) based Equation of State (EOS) construction is a prominent part of Sandia’s capabilities to support engineering sciences. This capability is based on augmenting experimental data with information gained from computational investigations, especially in those parts of the phase space where experimental data is hard, dangerous, or expensive to obtain. A key part of the success of the Sandia approach is the fundamental science work supporting the computational capability. Not only does this work enhance the capability to perform highly accurate calculations but it also provides crucial insight into the limitations of the computational tools, providing high confidence in the results even where results cannot be, or have not yet been, validated by experimental data. This report concerns the key ingredient of projector augmented-wave (PAW) potentials for use in pseudo-potential computational codes. Using the tools discussed in SAND2012-7389 we assess the standard Vienna Ab-initio Simulation Package (VASP) PAWs for Molybdenum.
This report documents the development, demonstration and validation of a mesoscale, microstructural evolution model for simulation of zirconium hydride {delta}-ZrH{sub 1.5} precipitation in the cladding of used nuclear fuels that may occur during long-term dry storage. While the Zr-based claddings are manufactured free of any hydrogen, they absorb hydrogen during service, in the reactor by a process commonly termed ‘hydrogen pick-up’. The precipitation and growth of zirconium hydrides during dry storage is one of the most likely fuel rod integrity failure mechanisms either by embrittlement or delayed hydride cracking of the cladding. While the phenomenon is well documented and identified as a potential key failure mechanism during long-term dry storage (NUREG/CR-7116), the ability to actually predict the formation of hydrides is poor. The model being documented in this work is a computational capability for the prediction of hydride formation in different claddings of used nuclear fuels. This work supports the Used Fuel Disposition Research and Development Campaign in assessing the structural engineering performance of the cladding during and after long-term dry storage. This document demonstrates a basic hydride precipitation model that is built on a recently developed hybrid Potts-phase field model that combines elements of Potts-Monte Carlo and the phase-field models. The model capabilities are demonstrated along with the incorporation of the starting microstructure, thermodynamics of the Zr-H system and the hydride formation mechanism.