The synthesis of well-defined nanoparticle materials has been an area of intense investigation, but size control in nanoparticle syntheses is largely empirical. Here, we introduce a general method for fine size control in the synthesis of nanoparticles by establishing steady state growth conditions through the continuous, controlled addition of precursor, leading to a uniform rate of particle growth. This approach, which we term the "xtended LaMer mechanism" allows for reproducibility in particle size from batch to batch as well as the ability to predict nanoparticle size by monitoring the early stages of growth. We have demonstrated this method by applying it to a challenging synthetic system: magnetite nanoparticles. To facilitate this reaction, we have developed a reproducible method for synthesizing an iron oleate precursor that can be used without purification. We then show how such fine size control affects the performance of magnetite nanoparticles in magnetic hyperthermia.
The use of colloidal processing principles in the formation of ceramic materials is well appreciated for developing homogeneous material properties in sintered products, enabling novel forming techniques for porous ceramics or 3D printing, and controlling microstructure to enable optimized material properties. The solution processing of electronic ceramic materials often involves multiple cationic elements or dopants to affect microstructure and properties. Material stability must be considered through the steps of colloidal processing to optimize desired component properties. This review provides strategies for preventing material degradation in particle synthesis, milling processes, and dispersion, with case studies of consolidation using spark plasma sintering of these systems. The prevention of multication corrosion in colloidal dispersions can be achieved by utilizing conditions similar to the synthesis environment or by the development of surface passivation layers. The choice of dispersing surfactants can be related to these surface states, which are of special importance for nanoparticle systems. A survey of dispersant chemistries related to some common synthesis conditions is provided for perovskite systems as an example. Furthermore, these principles can be applied to many colloidal systems related to electronic and optical applications.
The development of an electrodeposition process for cobalt/iron (CoFe) alloys with minimal oxygen concentration and controlled stoichiometry is necessary for the advancement of magnetostrictive device functionalities. CoFe alloy films were electrodeposited out of a novel chemistry onto copper test structures enabling magnetic displacement testing for magnetostriction calculations. Using a combination of additives that served as oxygen scavengers, grain refiners, and complexing agents in conjunction with a pulsed plating technique, CoFe films were synthesized at thicknesses as high as 10μm with less than 8 at% oxygen at a stoichiometry of 70-75% Co and 25-30% Fe. X-Ray diffraction (XRD) analysis confirmed that these films had a crystal structure consistent with 70% Co 30% Fe Wairuaite with a slight lattice contraction due to Co doping in the film. A novel characterization technique was used to measure the displacement of the CoFe films electrodeposited, as a function of applied magnetic bias, in order to determine the saturation magnetostriction (λS) of the material. With this chemistry and a tailored pulse plating regime, λS values as high as 172 ± 25ppm have been achieved. This is believed by the authors to be the highest reported value of magnetostriction for an electrodeposited CoFe film.
The photosensitization of photorefractive polymeric composites for operation at 633 nm is accomplished through the inclusion of narrow band gap semiconductor nanocrystals composed of PbS. Unlike previous studies involving photosensitization of photorefractive polymer composites with inorganic nanocrystals, we employ an off-resonance approach where the first excitonic transition associated with the PbS nanocrystals lies at ∼1220 nm and not the wavelength of operation. Using this methodology, internal diffraction efficiencies exceeding 82%, two-beam-coupling gain coefficients of 211 cm-1, and response times of 34 ms have been observed, representing some of the best figures of merit reported for this class of materials. These data demonstrate the ability of semiconductor nanocrystals to compete effectively with traditional organic photosensitizers. In addition to superior performance, this approach also offers an inexpensive and easy means by which to photosensitize composite materials. The photoconductive characteristics of the composites used for this study will also be considered.
This project focused on developing a novel, scalable, and economic growth technique for bulk gallium nitride (GaN), a critical material for next-generation high-temperature power electronics. Large area, high-quality bulk GaN is required as a substrate material in order to grow highly efficient bipolar transistors for inverters and power conditioning. Attempting to grow GaN in bulk by traditional precipitation methods forces extreme thermodynamic and kinetic conditions, putting these techniques at the extremes of experimental science, which is unsuitable for large-area, cost-effective substrate growth. The Electrochemical Solution Growth (ESG) technique is a novel concept that addresses these issues in a unique way, and was developed at Sandia National Laboratories (SNL), in part under this program. The crucial step in demonstrating the technique’s feasibility was to deposit high-quality GaN on a seed crystal. The bulk of SNL’s activities were focused on developing conditions for deposition of GaN on a seed crystal (a thin film of GaN grown by metal organic chemical vapor phase deposition (MOCVD) on c-axis oriented sapphire) in a molten salt electrolyte solution using a rotating disk reactor (RDR) ESG apparatus. This project was actively funded from FY08 to FY12 by the Energy Storage Program and GaN Initiative for Grid Applications (GIGA) program of the Office of Electricity Delivery and Energy Reliability (OE) in the U.S. Department of Energy (DOE). Some activities focused on silicon doping of GaN occurred in FY13 but only through the use of carryover funds.
Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.
This work demonstrates the use of FIB implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 um by and 10 um and 100 um by 100 um, demonstrate that doses above than 7.5 x 1015 cm-2 at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75 nm wide by 10 um long connected to 50 um wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature, Tc =7.7 K, was measured using MPMS. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.