Monolithic SiC Semiconductor Switch Development
Abstract not provided.
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Jump to search filtersMonolithic High Voltage SiC Semiconductor Switch Development
Abstract not provided.
Reliable High-Performance Gate Oxides for Wide Band Gap Devices
Abstract not provided.
Reliability Characterization of Wide-Bandgap Semiconductor Switches
Abstract not provided.
Monolithically Integrated High Voltage Silicon Carbide Switch + Diode Development
Abstract not provided.
Reliable High-Performance Gate Oxides for Wide Band Gap Devices
Abstract not provided.
High Frequency Link Converters Using Advanced Magnetics
Abstract not provided.
Switching Characterization of Wide-Bandgap Power Semiconductor Devices
Abstract not provided.
gamma'-Fe4N a new soft magnetic material for inductors and motors
Abstract not provided.
Grid-tied Energy Storage Safety
Abstract not provided.
DOE OE Energy Storage Power Electronics Program
Abstract not provided.
Soft magnetic laminated FeSiCrB-FexN metallic glass composites fabricated via spark plasma sintering
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Synthesis of bulk iron nitride soft magnetic materials
Abstract not provided.
III-nitride surface chemistry influence on band offsets of gate oxides on GaN
Abstract not provided.
Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content
Applied Physics Letters
Epitaxial (111) MgO films were prepared on (0001) AlxGa1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of MgO to AlxGa1-xN were measured using X-ray photoelectron spectroscopy as 1.65±0.07eV, 1.36±0.05eV, and 1.05±0.09eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75eV, 2.39eV, and 1.63eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between MgO and AlxGa1-xN provide a>1eV barrier height to the semiconductor.
Reliable High-Performance Gate Oxides for Wide Band Gap Devices
Abstract not provided.
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability
Abstract not provided.
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability
Abstract not provided.
Energy Storage Safety Working Group
Abstract not provided.
Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability
Abstract not provided.
Reliable High-Performance Gate Oxides for Wide Band Gap Devices
Abstract not provided.
Energy Storage Safety Plan Implementation Kickoff
Abstract not provided.
Sandia National Laboratories/Energy Storage Program: An Overview
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Fabrication of bulk iron nitride for energy conversion
Abstract not provided.
EMA Energy Storage Workshop
Abstract not provided.
Results 151–175 of 306