Publications

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We present a comprehensive physics investigation of electrothermal effects in III-V heterojunction bipolar transistors (HBTs) via extensive Technology Computer Aided Design (TCAD) simulation and modeling. We show for the first time that the negative differential resistances of the common-emitter output responses in InGaP/GaAs HBTs are caused not only by the well-known carrier mobility reduction, but more importantly also by the increased base-To-emitter hole back injection, as the device temperature increases from self-heating. Both self-heating and impact ionization can cause fly-backs in the output responses under constant base-emitter voltages. We find that the fly-back behavior is due to competing processes of carrier recombination and self-heating or impact ionization induced carrier generation. These findings will allow us to understand and potentially improve the safe operating areas and circuit compact models of InGaP/GaAs HBTs.

We present a comprehensive physics investigation of electrothermal effects in III-V heterojunction bipolar transistors (HBTs) via extensive Technology Computer Aided Design (TCAD) simulation and modeling. We show for the first time that the negative differential resistances of the common-emitter output responses in InGaP/GaAs HBTs are caused not only by the well-known carrier mobility reduction, but more importantly also by the increased base-To-emitter hole back injection, as the device temperature increases from self-heating. Both self-heating and impact ionization can cause fly-backs in the output responses under constant base-emitter voltages. We find that the fly-back behavior is due to competing processes of carrier recombination and self-heating or impact ionization induced carrier generation. These findings will allow us to understand and potentially improve the safe operating areas and circuit compact models of InGaP/GaAs HBTs.

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We present an analytic band-to-trap tunneling model based on the open boundary scattering approach. The new model has three major advantages: (i) It includes not only the well-known electric field effect, but more importantly, the effect of heterojunction band offset. This feature allows us to simulate both electric field and band offset enhanced carrier recombination near a heterojunction in heterostructures. (ii) Its analytic form enables straightforward implementation into a parallel Technology Computer Aided Design device and circuit simulators. (iii) The developed method can be used for any potentials which can be approximated to a good degree such that the Schrödinger equation with open boundary conditions results in piecewise analytic wave functions. Simulation results of an InGaP/GaAs heterojunction bipolar transistor (HBT) reveal that the proposed model predicts significantly increased base currents, because the tunneling of holes in the base to traps in the emitter is greatly enhanced by the emitter-base band offset. This finding, which is not captured by existing band-to-trap tunneling models, is consistent with the experimental observation for an InGaP/GaAs HBT after neutron irradiation.

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We present an analytic band-to-trap tunneling model developed using the open boundary scattering approach. The new model explicitly includes the effect of heterojunction band offset, in addition to the well known electric field effect. Its analytic form enables straightforward implementation into TCAD device and circuit simulators. The model is capable of simulating both electric field and band offset enhanced carrier recombination due to the band-to-trap tunneling in the depletion region near a heterojunction. Simulation results of an InGaP/GaAs heterojunction bipolar transistor reveal that the proposed model predicts significantly increased base currents, because the hole-to-trap tunneling from the base to the emitter is greatly enhanced by the emitter base heterojunction band offset. The results compare favorably with experimental observations. The developed method can be applied to all one dimensional potentials which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions.

We present an analytic band-to-trap tunneling model developed using the open boundary scattering approach. The new model explicitly includes the effect of heterojunction band offset, in addition to the well known electric field effect. Its analytic form enables straightforward implementation into TCAD device and circuit simulators. The model is capable of simulating both electric field and band offset enhanced carrier recombination due to the band-to-trap tunneling in the depletion region near a heterojunction. Simulation results of an InGaP/GaAs heterojunction bipolar transistor reveal that the proposed model predicts significantly increased base currents, because the hole-to-trap tunneling from the base to the emitter is greatly enhanced by the emitter base heterojunction band offset. The results compare favorably with experimental observations. The developed method can be applied to all one dimensional potentials which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions.

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In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.

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We report on the development of a frequency domain method of analysis in the Panzer foundation of Charon. We first present a harmonic balance approach for calculating the frequency-domain response (in its weak form) of a non-linear system of partial differential equations (PDEs). Our approach is anemable to adaptation of Charon's transient PDE models for frequency domain analysis. We make an observation that allows us to analyze either small-signal or large-signal responses with minimal specialization of the algorithm. We conclude by confirming our small- and large-signal analyses of a transient, linear Helmholtz equation by comparing its analytic solution to our results. We include figures from a sequence of non-linear perturbations of this system, showcasing the fact that, when the non-linearities are insignificant, the small- and large-signal analyses obtain similar solutions. On the other hand, we depict the inadequacy of a small-signal analysis to accurately capture the response in the presence of a large non-linearity, and underscore the requirement to employ a large-signal analysis for modelling highly non-linear systems.

In this report, we describe some approaches to calculate the non-linear system of equations prescribed by the harmonic balance method (HB), a frequency domain analysis technique for modelling a non-linear system of partial differential equations (PDEs). The approach which we ultimately pursue can be seen as a time-collocation approach, except that the harmonic balance equations are obtained weakly (in the sense used in the calculus of variations). This weak formulation allows us to adapt existing transient or stationary PDEs models in the Panzer/Trilinos framework for frequency domain analysis via the harmonic balance method. We begin with a motivatation for the harmonic balance method and outline its mathematical formulation. We then describe some approaches to calculate the harmonic balance formulae, and their means of implementation through the modification of a Panzer tutorial problem - a stationary Helmholtz equation with a constant Dirichlet boundary condition and a non-linear source. For each of these approaches, we outline the necessary adaptations to solve the corresponding (periodically) transient Helmholtz equation with a (temporally) periodic Dirichlet boundary condition and non-linear source.

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