Allerman, A., Binder, A., Armstrong, A., Yates, L., Steinfeldt, J.A., Vuong, H., Kaplar, R., & Kaplar, R. (2024). XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth [Conference Presenation]. 10.2172/2540444
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Jump to search filtersYates, L., Binder, A., Allerman, A., Armstrong, A., Steinfeldt, J.A., Smith, M.L., Foulk, J.W., Rice, A., Kaplar, R., Vuong, H., & Vuong, H. (2024). High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown [Conference Paper]. https://www.osti.gov/biblio/2540489
Yates, L., Binder, A., Rice, A., Steinfeldt, J.A., Vuong, H., Smith, M.L., Armstrong, A., Allerman, A., Crawford, M.H., Gunning, B.P., Kaplar, R., & Kaplar, R. (2024). Development of Medium-Voltage High-Current Vertical GaN Power Devices [Conference Presenation]. 10.2172/2540432
Allerman, A., Binder, A., Armstrong, A., Steinfeldt, J.A., Yates, L., Vuong, H., Smith, M.L., Kaplar, R., & Kaplar, R. (2024). In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowth of p-type GaN for High Voltage PN Diodes [Conference Presenation]. 10.2172/2540449
Binder, A., Steinfeldt, J.A., Allerman, A., Glaser, C.E., Yates, L., Foulk, J.W., Smith, M.L., Rummel, B.D., Reilly, K.J., Sharps, P., Kaplar, R., Cooper, J.A., & Cooper, J.A. (2023). Advanced Design Concepts for Vertical Gallium Nitride MOSFETs [Conference Presenation]. 10.2172/2584887
Rummel, B.D., Cooper, J.A., Morisette, D.T., Yates, L., Glaser, C.E., Binder, A., Ramadoss, K., Kaplar, R., & Kaplar, R. (2023). Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance-voltage measurements in wide bandgap semiconductors. Journal of Applied Physics, 134(12). 10.1063/5.0158333
Binder, A., Cooper, J.A., Steinfeldt, J.A., Allerman, A., Foulk, J.W., Yates, L., Kaplar, R., & Kaplar, R. (2023). Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield ☆. e-Prime - Advances in Electrical Engineering, Electronics and Energy, 5. https://doi.org/10.1016/j.prime.2023.100218
Klein, B., Allerman, A., Armstrong, A., Rosprim, M., Burt, C.J., Neely, J.C., McDonough, M., Chung, H., Kropka, K.E., Colon, A., Foulk, J.W., Rice, A., Tyznik, C., Matins, B., Douglas, E.A., Kaplar, R., & Kaplar, R. (2023). Recent Advancements in (Al)GaN High Electron Mobility Transistor Power Electronics at Sandia [Conference Presenation]. 10.2172/2430473
Yates, L., Delmas, W., Jarzembski, A., McDonald, A., Bahr, M.N., Antiporda, L.M., Rummel, B.D., Hodges, W., Piontkowski, Z.T., Kaplar, R., & Kaplar, R. (2023). Visualizing and Quantifying Thermal Conductance and Strain at Compression Bonded GaN-Diamond Interfaces via Optical Methods [Conference Presenation]. 10.2172/2430784
Glaser, C.E., Rummel, B.D., Klesko, J.P., Dickens, P.T., Binder, A., Kaplar, R., Feezell, D., & Feezell, D. (2023). Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics [Conference Presenation]. 10.2172/2430821
Gonzalez Padilla, N., Lehr, J., Hjalmarson, H.P., Kaplar, R., Mar, A., Miller, S., Schrock, E.A., Pickrell, G.W., & Pickrell, G.W. (2023). Investigating Operation Modes in Gallium Nitride Photoconductive Switches [Conference Poster]. 10.2172/2430863
Allerman, A., Armstrong, A., Binder, A., Yates, L., Kaplar, R., Steinfeldt, J.A., Smith, M.L., & Smith, M.L. (2023). Demonstration of a Merged Pin Schottky in 30% AlGaN [Conference Presenation]. 10.2172/2431933
Kaplar, R., Yates, L., Binder, A., Allerman, A., Armstrong, A., Steinfeldt, J.A., Smith, M.L., Rice, A., Crawford, M., Gunning, B., Aktas, O., & Aktas, O. (2023). Progress in Medium-Voltage Vertical GaN Power Devices [Conference Presenation]. 10.2172/2431941
Yates, L., Binder, A., Rummel, B.D., Gunning, B., Crawford, M., Smith, M.L., Armstrong, A., Allerman, A., Steinfeldt, J.A., Rice, A., Kaplar, R., & Kaplar, R. (2023). Design and Evaluation of Vertical GaN PN Diode Junction Termination Extensions in High Temperature Environments [Conference Presenation]. 10.2172/2432069
Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., Kaplar, R., & Kaplar, R. (2023). AlGaN High Electron Mobility Transistor for High-Temperature Logic. Journal of Microelectronics and Electronic Packaging, 20(1). 10.4071/imaps.1832996
Gill, L., Actor, J.A., Kaplar, R., Michaels, A.J., & Michaels, A.J. (2023). Machine Learning Based Non-Intrusive Inspection Technique to Quantify GaN HEMT Characteristics [Conference Paper]. 2023 IEEE Design Methodologies Conference, DMC 2023. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85185552626&origin=inward
Kaplar, R., Yates, L., & Yates, L. (2022). Medium-Voltage Vertical GaN PiN Diodes for Fast Grid Protection [Presentation]. https://www.osti.gov/biblio/2006272
Kaplar, R., Yates, L., & Yates, L. (2022). Foundry Manufacuring of Medium-Voltage Vertical GaN PiN Diodes [Presentation]. https://www.osti.gov/biblio/2006276
Gill, L., Neely, J.C., Rashkin, L.J., Yates, L., Kaplar, R., & Kaplar, R. (2022). Multi-Objective Parametric Analysis of EV Traction Inverter between Reliability and Effciency [Conference Paper]. https://www.osti.gov/biblio/2006277
Flicker, J.D., Kaplar, R., Schrock, E.A., & Schrock, E.A. (2022). Reverse Breakdown Time of Wide Bandgap Diodes [Conference Presenation]. 10.2172/2005972
Allerman, A., Crawford, M., Armstrong, A., Klein, B., Binder, A., Yates, L., Kaplar, R., Steinfeldt, J.A., Smith, M.L., & Smith, M.L. (2022). Ultra-Wide Bandgap AlGaN Alloys for Power Electronics (invited) [Conference Presenation]. 10.2172/2005973
Rummel, B.D., Morisette, D.T., Cooper, J.A., Glaser, C.E., Yates, L., Binder, A., Kaplar, R., & Kaplar, R. (2022). Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique [Conference Presenation]. 10.2172/2006045
Allerman, A., Crawford, M., Armstrong, A., Binder, A., Yates, L., Kaplar, R., Steinfeldt, J.A., Foulk, J.W., & Foulk, J.W. (2022). Ultra-wide Bandgap AlGaN Alloys for Power Diodes and Transistors (invited) [Conference Presenation]. 10.2172/2005348
Binder, A., Allerman, A., Glaser, C.E., Yates, L., Rummel, B.D., Smith, T., Dickerson, J., Steinfeldt, J.A., Pickrell, G.W., Sharps, P., Kaplar, R., Cooper, J.A., & Cooper, J.A. (2022). Vertical Gallium Nitride MOSFETs for Electric Drivetrains [Conference Presenation]. 10.2172/2005505
Rummel, B.D., Morisette, D.T., Cooper, J.A., Glaser, C.E., Yates, L., Binder, A., Kaplar, R., & Kaplar, R. (2022). Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique [Conference Presenation]. 10.2172/2005926
Mueller, J.A., Kaplar, R., Flicker, J.D., Rodriguez, L.G., Binder, A., Ropp, M.E., Gill, L., Palacios, F., Rashkin, L.J., Dow, A., Elliott, R.T., & Elliott, R.T. (2022). System Integration Analysis for Modular Solid-State Substations. 10.2172/1889517
Dickerson, J., Pickrell, G.W., Kropka, K.E., Foulk, J.W., Smith, T., Steinfeldt, J.A., Vuong, H., Kaplar, R., & Kaplar, R. (2022). Al-thickness dependence of N-face n-type GaN contacts [Conference Poster]. 10.2172/2004857
Kaplar, R., Dasgupta, S., Mueller, J.A., Rodriguez, L.G., Flicker, J.D., Foulk, J.W., Gill, L., Binder, A., Atcitty, S., & Atcitty, S. (2022). Wide-Bandgap Power Electronics Reliability: Device Physics to Converter Performance [Presentation]. https://www.osti.gov/biblio/2004868
Goodnick, S., Shoemaker, J., Nemanich, R., Kaplar, R., Flicker, J.D., Binder, A., & Binder, A. (2022). Ultrawide Bandgap Semiconductors: Influence of Material Properties on Power Device Performance [Conference Presenation]. https://doi.org/10.2172/2004464
Aktas, O., Pickrell, G.W., Kaplar, R., & Kaplar, R. (2022). Reliability of GaN power devices: Current status and Future challenges [Conference Presenation]. 10.2172/2004468
Goodnick, S., Shoemaker, J., Surdi, H., Vatan, R., Nemanich, R., Dutta, M., Kaplar, R., Flicker, J.D., Binder, A., Gill, L., Palacios, F., Chowdhury, S., & Chowdhury, S. (2022). Ultrawide Bandgap Semiconductors: Influence of Material Properties on Power Device Performance [Conference Presenation]. 10.2172/2004478
Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, C., Kaplar, R., & Kaplar, R. (2022). AlGaN High Electron Mobility Transistor for High Temperature Logic [Conference Presenation]. Advancing Microelectronics. 10.2172/2003976
Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, C., Kaplar, R., & Kaplar, R. (2022). AlGaN High Electron Mobility Transistor for High Temperature Logic [Conference Proceeding]. 10.4071/imaps.1832996
Glaser, C.E., Rummel, B.D., Binder, A., Yates, L., Allerman, A., Feezell, D., Kaplar, R., & Kaplar, R. (2022). Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs [Conference Presenation]. 10.2172/2003786
Choi, S., Shoemaker, D., Chatterjee, B., Kendig, D., Kaplar, R., Klein, B., & Klein, B. (2022). Deep-Ultraviolet Thermoreflectance Imaging of Ultra-Wide Bandgap Semiconductor Devices (invited) [Conference Presenation]. 10.2172/2003788
Kaplar, R. (2022). Medium-Voltage Vertical GaN PiN Diodes for Fast Grid Protection [Presentation]. https://www.osti.gov/biblio/2003004
Binder, A., Allerman, A., Glaser, C.E., Yates, L., Smith, T., Dickerson, J., Steinfeldt, J.A., Pickrell, G.W., Sharps, P., Kaplar, R., & Kaplar, R. (2022). Vertical Gallium Nitride MOSFETs for Electric Drivetrains [Presentation]. 10.1149/MA2022-02371361mtgabs
Kaplar, R. (2022). Foundry Manufacturing of Medium-Voltage Vertical GaN PiN Diodes [Presentation]. https://www.osti.gov/biblio/2003016
Allerman, A., Crawford, M.H., Binder, A., Armstrong, A., Pickrell, G.W., Abate, V.M., Steinfeldt, J.A., Kaplar, R., & Kaplar, R. (2022). Selective Area Regrowth of p-type GaN and AlGaN for Power Diodes (invited) [Conference Presenation]. 10.2172/2003079
Kaplar, R., Yates, L., Gunning, B.P., Crawford, M.H., Steinfeldt, J.A., Foulk, J.W., Abate, V.M., Dickerson, J., Armstrong, A., Binder, A., Allerman, A., Sharps, P., Flicker, J.D., & Flicker, J.D. (2022). Realization of Medium-Voltage Vertical GaN PiN Diodes (invited) [Conference Presenation]. 10.2172/2003119
Yates, L., Gunning, B.P., Crawford, M.H., Steinfeldt, J.A., Smith, M.L., Abate, V.M., Dickerson, J., Armstrong, A., Binder, A., Allerman, A., Kaplar, R., & Kaplar, R. (2022). Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions. IEEE Transactions on Electron Devices, 69(4), pp. 1931-1937. 10.1109/ted.2022.3154665
Flicker, J.D., Bock, J.A., Foulk, J.W., Kaplar, R., & Kaplar, R. (2022). High-Reliability Ceramic Capacitors to Enable Extreme Power Density Improvements [Conference Poster]. 10.2172/2002518
Gill, L., Rashkin, L.J., Yates, L., Subramania, G.S., Flicker, J.D., Binder, A., Monson, T., Kaplar, R., Neely, J.C., & Neely, J.C. (2022). Component Testing, Co-Optimization, and Trade-Space Evaluation [Conference Poster]. 10.2172/2002922
Ji, D., Zeng, K., Bian, Z., Shankar, B., Gunning, B.P., Binder, A., Dickerson, J., Aktas, O., Anderson, T.J., Kaplar, R., Chowdhury, S., & Chowdhury, S. (2022). A discussion on various experimental methods of impact ionization coefficient measurement in GaN. AIP Advances, 12(3). 10.1063/5.0083111
Slobodyan, O., Flicker, J.D., Dickerson, J., Shoemaker, J., Binder, A., Smith, T., Goodnick, S., Kaplar, R., Hollis, M., & Hollis, M. (2022). Analysis of the dependence of critical electric field on semiconductor bandgap. Journal of Materials Research, 37(4), pp. 849-865. https://doi.org/10.1557/s43578-021-00465-2
Kaplar, R., Goodnick, S., Shoemaker, J., Vatan, R., Surdi, H., Flicker, J.D., Binder, A., Chowdhury, S., & Chowdhury, S. (2022). A Co-Design Approach to Understanding the Impact of Ultra-Wide-Bandgap Semiconductor Material Properties on Power Device Performance (invited) [Conference Presenation]. 10.2172/2001968
Dasgupta, S., Slobodyan, O., Smith, T., Binder, A., Flicker, J.D., Kaplar, R., Mueller, J.A., Rodriguez, L.G., Atcitty, S., & Atcitty, S. (2022). Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy. Applied Physics Letters, 120(5). 10.1063/5.0082257
Kaplar, R., Binder, A., Crawford, M.H., Allerman, A., Gunning, B.P., Flicker, J.D., Yates, L., Armstrong, A., Dickerson, J., Glaser, C.E., Steinfeldt, J.A., Abate, V.M., Smith, M.L., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A.G., Koehler, A., … Cooper, J.A. (2022). Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited) [Conference Presenation]. 10.2172/2001791
Shankar, B., Bian, Z., Zeng, K., Meng, C., Martinez, R.P., Chowdhury, S., Gunning, B.P., Flicker, J.D., Binder, A., Dickerson, J., Kaplar, R., & Kaplar, R. (2022). Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization [Conference Proceeding]. IEEE International Reliability Physics Symposium Proceedings. 10.1109/IRPS48227.2022.9764525
Flicker, J.D., Schrock, E.A., Kaplar, R., & Kaplar, R. (2022). Reverse Breakdown Time of Wide Bandgap Diodes [Conference Paper]. 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022. 10.1109/WiPDA56483.2022.9955278
Wong, M.H., Bierwagen, O., Kaplar, R., Umezawa, H., & Umezawa, H. (2021). Ultrawide-bandgap semiconductors: An overview. Journal of Materials Research, 36(23), pp. 4601-4615. 10.1557/s43578-021-00458-1
Lehr, J., Gonzalez, N., Maynard, B., Foulk, J.W., Hjalmarson, H.P., Kaplar, R., Mar, A., Schrock, E.A., Pickrell, G.W., & Pickrell, G.W. (2021). Investigating Lock On in Gallium Nitride Photoconductive Solid State Switches [Conference Poster]. 10.2172/2001620
Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Abate, V.M., Smith, M.L., Pickrell, G.W., Sharps, P., Neely, J.C., Rashkin, L.J., Gill, L., Goodrick, K., Anderson, T., Gallagher, J., … Cooper, J.A. (2021). Recent Progress in Vertical Gallium Nitride Power Devices [Conference Presenation]. 10.2172/1900106
Kaplar, R., Anderson, T., Chowdhury, S., Akta, O., & Akta, O. (2021). Targeting Medium-Voltage Power Electronics with Vertical GaN Devices. Compound Semiconductor, 27(VII). https://www.osti.gov/biblio/1834147
Kaplar, R., Binder, A., Yates, L., Allerman, A., Crawford, M.H., Dickerson, J., Armstrong, A., Glaser, C.E., Steinfeldt, B., Abate, V.M., Foulk, J.W., Pickrell, G.W., Sharps, P., Flicker, J.D., Neely, J.C., Rashkin, L.J., Gill, L., Goodrick, K., Monson, T., … Cooper, J. (2021). Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited) [Conference Presenation]. 10.2172/1890896
Binder, A., Pickrell, G.W., Allerman, A., Dickerson, J., Yates, L., Steinfeldt, J.A., Glaser, C.E., Crawford, M.H., Armstrong, A., Sharps, P., Kaplar, R., & Kaplar, R. (2021). Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes [Conference Presenation]. 10.2172/1891066
Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Abate, V.M., Smith, M., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A.G., Koehler, A., Tadjer, M., Hobart, K., … Cooper, J.A. (2021). Vertical GaN PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics [Conference Presenation]. 10.2172/1891242
Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Abate, V.M., Smith, M., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A.G., Koehler, A., Tadjer, M., Hobart, K., … Cooper, J.A. (2021). Vertical GaN Devices for Medium-Voltage Power Electronics [Conference Presenation]. 10.2172/1891243
Glaser, C.E., Binder, A., Yates, L., Allerman, A., Feezell, D., Kaplar, R., & Kaplar, R. (2021). Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices [Conference Presenation]. 10.2172/1891975
Sharps, P., Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., Paisley, E., Baca, A., Klein, B., Douglas, E.A., Binder, A., Yates, L., Lee, S.R., Simmons, J., Tsao, J.Y., & Tsao, J.Y. (2021). WBG & UWBG Semiconductors for Power Electronics [Presentation]. https://www.osti.gov/biblio/1888422
Klein, B., Allerman, A., Hines, N., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Pipkin, J.R., Foulk, J.W., Caravello, L.A., Rosprim, M., Kotula, P.G., Abate, V.M., Graham, S., Kaplar, R., & Kaplar, R. (2021). AlGaN Transistors for Digital Logic Applications in High-Temperature Environments [Conference Presenation]. 10.2172/1890854
Allerman, A., Crawford, M.H., Armstrong, A., Binder, A., Kaplar, R., Steinfeldt, J.A., Smith, M., Abate, V.M., & Abate, V.M. (2021). Ultra-wide Bandgap AlGaN Alloys for Power Diodes and Transistors (invited) [Conference Presenation]. 10.2172/1884214
Chang, L., Mazumder, S., Xue, Y., Chen, M., Kaplar, R., Pickrell, G.W., Flicker, J.D., Binder, A., & Binder, A. (2021). Introduction to Power Electronic Technologies in Distributed Energy Resources [Conference Presenation]. 10.2172/1881656
Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., Paisley, E., Baca, A., Klein, B., Douglas, E.A., Reza, S., Binder, A., Yates, L., Slobodyan, O., Sharps, P., Simmons, J., Tsao, J.Y., … Chowdhury, S. (2021). Ultra-Wide-Bandgap Semiconductors: Challenges and Opportunities (invited) [Presentation]. https://www.osti.gov/biblio/1889053
Gallagher, J.C., Ebrish, M.A., Jacobs, A.G., Koehler, A.D., Gunning, B.P., Kaplar, R., Hobart, K.D., Anderson, T.J., & Anderson, T.J. (2021). Using Long Range Optical Techniques to Predict Vertical GaN Diode Performance [Conference Presenation]. 10.2172/1878453
Klein, B., Armstrong, A., Allerman, A., Nordquist, C.D., Neely, J.C., Reza, S., Douglas, E.A., van Heukelom, M., Rice, A., Patel, V.J., Matins, B., Fortune, T., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., Kaplar, R., & Kaplar, R. (2021). AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic [Conference Presenation]. 10.2172/1882105
Pickrell, G.W., Neely, J.C., Flicker, J.D., Atcitty, S., Gill, L., Mueller, J.A., Rodriguez, L.G., Schrock, E.A., Mar, A., Hjalmarson, H.P., Kaplar, R., Lehr, J., Maynard, B., & Maynard, B. (2021). ARC-SAFE: Accelerated Response Semiconducting Contactors and Surge Attenuation for DC Electrical Systems Quarterly Review June 2021 [Presentation]. https://www.osti.gov/biblio/1872180
Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Pickrell, G.W., Sharps, P., Neely, J.C., Rashkin, L.J., Gill, L., Anderson, T., Gallagher, J., Jacobs, A., Koehler, A., Tadjer, M., … Cooper, J.A. (2021). Vertical GaN Power Electronics - Opportunities and Challenges (invited) [Conference Presenation]. 10.2172/1855917
Madhusoodhanan, S., Sabbar, A., Atcitty, S., Kaplar, R., Mantooth, A., Yu, S., Chen, Z., & Chen, Z. (2021). High-Temperature Optical Characterization of GaN-Based LEDs for Future Power Electronic Modules [Conference Proceeding]. https://www.osti.gov/biblio/1859691
Glaser, C.E., Binder, A.T., Yates, L., Allerman, A., Feezell, D.F., Kaplar, R., & Kaplar, R. (2021). Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices [Conference Proceeding]. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings. 10.1109/WiPDA49284.2021.9645149
Binder, A., Pickrell, G.W., Allerman, A., Dickerson, J., Yates, L., Steinfeldt, J.A., Glaser, C.E., Crawford, M.H., Armstrong, A., Sharps, P., Kaplar, R., & Kaplar, R. (2021). Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes [Conference Paper]. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings. 10.1109/WiPDA49284.2021.9645135
Kaplar, R., Baca, A.G., Douglas, E.A., Klein, B., Allerman, A., Crawford, M.H., Reza, S., & Reza, S. (2021). High-Al-content heterostructures and devices. Semiconductors and Semimetals. 10.1016/bs.semsem.2021.05.001
Shankar, B., Zeng, K., Gunning, B.P., Lee, K.J., Martinez, R.P., Meng, C., Zhou, X.Y., Flicker, J.D., Binder, A., Dickerson, J., Kaplar, R., Chowdhury, S., & Chowdhury, S. (2021). On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode under Unclamped Inductive Switching Stress [Conference Proceeding]. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings. 10.1109/WiPDA49284.2021.9645154
Kaplar, R., Gunning, B.P., Allerman, A., Crawford, M.H., Flicker, J.D., Armstrong, A., Yates, L., Binder, A., Dickerson, J., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A., Koehler, A., Tadjer, M., Hobart, K., Ebrish, M., Parter, M., Zeng, K., … Cooper, J.A. (2020). Development of High-Voltage Vertical GaN PN Diodes (invited) [Conference Presenation]. https://doi.org/10.2172/1835967
Kaplar, R., Allerman, A., Armstrong, A., Baca, A.G., Binder, A., Crawford, M.H., Dickerson, J., Douglas, E.A., Flicker, J.D., Klein, B., Neely, J.C., Reza, S., Sharps, P., Slobodyan, O., Yates, L., & Yates, L. (2020). Panel Discussion ? Ultra-Wide Bandgap Materials Devices and Systems [Presentation]. https://www.osti.gov/biblio/1835965
Hollis, M., Slobodyan, O., Flicker, J.D., Dickerson, J., Binder, A., Smith, T., Kaplar, R., & Kaplar, R. (2020). Dependence of Critical Electric Field on Semiconductor Bandgap - An Analytical Study [Conference Presenation]. 10.2172/1835966
Kaplar, R., Gunning, B.P., Allerman, A., Crawford, M.H., Flicker, J.D., Armstrong, A., Yates, L., Binder, A., Dickerson, J., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A., Koehler, A., Tadjer, M., Hobart, K., Ebrish, M., Porter, M., … Cooper, J.A. (2020). Development of High-Voltage Vertical GaN PN Diodes (invited) [Conference Presenation]. 10.2172/1835968
Kaplar, R. (2020). GaN Power HEMT Reliability Work at Sandia National Labs (invited) [Presentation]. https://www.osti.gov/biblio/1837622
Gill, L., Neely, J.C., Rashkin, L.J., Flicker, J.D., Kaplar, R., & Kaplar, R. (2020). Co-Optimization of Boost Converter Reliability and Volumetric Power Density [Brief]. 10.2172/1712847
Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Binder, A., Dickerson, J., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A., Koehler, A., Tadjer, M., Hobart, K., Ebrish, M., Porter, M., … Cooper, J.A. (2020). Development of High-Voltage Vertical GaN PN Diodes (invited) [Conference Presenation]. 10.2172/1831353
Ebrish, M.A., Anderson, T.J., Koehler, A.D., Foster, G.M., Gallagher, J.C., Kaplar, R., Gunning, B.P., Hobart, K.D., & Hobart, K.D. (2020). A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes. IEEE Transactions on Semiconductor Manufacturing, 33(4), pp. 546-551. 10.1109/tsm.2020.3019212
Gill, L., Neely, J.C., Rashkin, L.J., Flicker, J.D., Kaplar, R., & Kaplar, R. (2020). Co-Optimization of Boost Converter Reliability and Volumetric Power Density Using Genetic Algorithm [Conference Poster]. ECCE 2020 - IEEE Energy Conversion Congress and Exposition. 10.1109/ECCE44975.2020.9235716
Baca, A.G., Klein, B., Armstrong, A., Allerman, A., Douglas, E.A., Kaplar, R., & Kaplar, R. (2020). The Outlook for Al-Rich AlGaN Transistors (Invited) [Conference Presenation]. 10.2172/1825616
Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Binder, A., Dickerson, J., Pickrell, G.W., Anderson, T., Gallagher, J., Jacobs, A., Koehler, A., Tadjer, M., Hobart, K., Ebrish, M., Porter, M., Martinez, R., … Cooper, J.A. (2020). Development of High-Voltage Vertical GaN PN Diodes (invited) [Conference Poster]. https://www.osti.gov/biblio/1822992
Lundh, J.S., Song, Y., Chatterjee, B., Baca, A.G., Kaplar, R., Allerman, A., Armstrong, A., Klein, B., Kim, H., Choi, S., & Choi, S. (2020). Device-Level Multidimensional Thermal Dynamics with Implications for Current and Future Wide Bandgap Electronics. Journal of Electronic Packaging, 142(3). 10.1115/1.4047100
Douglas, E.A., Klein, B., Reza, S., Allerman, A., Kaplar, R., Armstrong, A., Baca, A.G., & Baca, A.G. (2020). Current Enhancement for Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors by Regrowth Contact Design [Conference Poster]. https://www.osti.gov/biblio/1821081
Kaplar, R., Flicker, J.D., Slobodyan, O., Mueller, J.A., Rodriguez, L.G., Binder, A., Dickerson, J., Smith, T., Atcitty, S., & Atcitty, S. (2020). Reliability Studies of Wide-Bandgap Power Semiconductor Devices Under Realistic Stress Conditions [Presentation]. https://www.osti.gov/biblio/1821084
Pickrell, G.W., Mar, A., Schrock, E.A., Neely, J.C., Kaplar, R., & Kaplar, R. (2020). ARC-SAFE: Accelerated Response Semiconducting Contactors and Surge Attenuation For DC Electrical Systems FY20 Annual Review [Presentation]. https://www.osti.gov/biblio/1813717
Binder, A., Kaplar, R., Dickerson, J., & Dickerson, J. (2020). Limitations in Impact Ionization Modeling for Predicting Breakdown in Wide Bandgap Power Semiconductors [Conference Poster]. https://www.osti.gov/biblio/1798067
Dickerson, J., Binder, A., Pickrell, G.W., Gunning, B.P., Kaplar, R., & Kaplar, R. (2020). Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes [Conference Poster]. 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85091990115&origin=inward
Yates, L., Binder, A., Dickerson, J., Pickrell, G.W., Kaplar, R., & Kaplar, R. (2020). Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs [Conference Poster]. https://www.osti.gov/biblio/1770554
Flicker, J.D., Brocato, R.W., Delhotal, J.J., Neely, J.C., Sumner, B., Dickerson, J., Kaplar, R., & Kaplar, R. (2020). Module-Level Paralleling of Vertical GaN PiN Diodes [Conference Poster]. 10.1109/WiPDA.2016.7799925
Grzybowski, T., Walraven, J., Foulk, J.W., Kaplar, R., Haase, G.S., & Haase, G.S. (2020). Advanced CMOS Reliability Update: Sub 20nm FinFET Assessment. 10.2172/1779710
Klein, B., Baca, A.G., Allerman, A., Nordquist, C.D., Armstrong, A., Wendt, J.R., Foulk, J.W., Binder, A., Smith, T., Pipkin, J.R., Kaplar, R., Hines, N., Graham, S., & Graham, S. (2020). AlGaN HEMT Logic for Extreme Temperature Operation [Conference Poster]. https://www.osti.gov/biblio/1766668
Reza, S., Kaplar, R., Armstrong, A., Baca, A.G., Klein, B., Douglas, E.A., Allerman, A., Crawford, M.H., Dickerson, J., Binder, A., Flicker, J.D., Neely, J.C., Slobodyan, O., & Slobodyan, O. (2020). Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications [Conference Poster]. https://www.osti.gov/biblio/1768356
Neely, J.C., Rashkin, L.J., Flicker, J.D., Kaplar, R., Pickrell, G.W., & Pickrell, G.W. (2019). The Case for Vertical Gallium Nitride Devices in Electric Vehicle Drives [Conference Poster]. https://www.osti.gov/biblio/1760988
Yates, L., Binder, A., Dickerson, J., Pickrell, G.W., Kaplar, R., & Kaplar, R. (2019). Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs [Conference Poster]. https://www.osti.gov/biblio/1760984
Dickerson, J., Binder, A., Pickrell, G.W., Gunning, B.P., Kaplar, R., & Kaplar, R. (2019). Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes [Conference Poster]. 10.1109/EDTM47692.2020.9117883
Dickerson, J., Binder, A., Kaplar, R., & Kaplar, R. (2019). Limitations in Impact Ionization Modeling for Predicting Breakdown in Wide Bandgap Power Semiconductors [Conference Poster]. https://www.osti.gov/biblio/1763872
Madhusoodhanan, S., Sabbar, A., Atcitty, S., Kaplar, R., Mantooth, A., Yu, S., Chen, Z., & Chen, Z. (2019). High-Temperature Optical Characterization of GaN-Based Light-Emitting Diodes for Future Power Electronic Modules. Physica Status Solidi. A, Applications and Materials Science, 217(7). 10.1002/pssa.201900792
Sabbar, A., Madhusoodhanan, S., al-Kabi, S., Dong, B., Wang, J., Atcitty, S., Kaplar, R., Ding, D., Mantooth, A., Yu, S.Q., Chen, Z., & Chen, Z. (2019). High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules. Scientific Reports, 9(1). 10.1038/s41598-019-52126-4
Kaplar, R., Armstrong, A., Baca, A.G., Klein, B., Douglas, E.A., Reza, S., Allerman, A., Crawford, M.H., Dickerson, J., Binder, A., Flicker, J.D., Neely, J.C., Slobodyan, O., & Slobodyan, O. (2019). Ultra-Wide-Bandgap Aluminum Gallium Nitride for High-Performance Power-Switching and Radio-Frequency Devices (invited) [Conference Poster]. https://www.osti.gov/biblio/1643509
Allerman, A., Crawford, M.H., Armstrong, A., Pickrell, G.W., Dickerson, J., Kaplar, R., Binder, A., Smith, M.L., Abate, V.M., & Abate, V.M. (2019). Ultra-Wide Bandgap Al-Rich AlGaN Alloys for Power Diodes and Transistors (invited) [Conference Poster]. https://www.osti.gov/biblio/1643447
Pickrell, G.W., Porter, M.A., Mohney, S., Specht, P., Allerman, A., Mughal, A., Kaplar, R., & Kaplar, R. (2019). Stable GaN-Based Schottky Contacts: Device Fabrication Update [Presentation]. https://www.osti.gov/biblio/1646284
Allerman, A., Armstrong, A., Pickrell, G.W., Crawford, M.H., Talin, A.A., Leonard, F., Celio, K.C., Feezell, D., Aragon, A.A., Kaplar, R., & Kaplar, R. (2019). Selective Area Growth of p-type GaN for Gallium Nitride Power Switching Transistors (invited) [Conference Poster]. https://www.osti.gov/biblio/1642881
Kaplar, R., Sharps, P., & Sharps, P. (2019). 18786/1873 Departments Wide Bandgap Materials and Devices [Presentation]. https://www.osti.gov/biblio/1646115
Binder, A., Dickerson, J., Crawford, M.H., Pickrell, G.W., Allerman, A., Sharps, P., Kaplar, R., & Kaplar, R. (2019). Bevel Edge Termination for Vertical GaN Power Diodes [Conference Poster]. 10.1109/WiPDA46397.2019.8998835
Kaplar, R. (2019). GaN Power Device Market Adoption: National Laboratory Perspective [Conference Poster]. https://www.osti.gov/biblio/1643050
Klein, B., Baca, A.G., Lepkowski, S., Nordquist, C.D., Wendt, J.R., Allerman, A., Armstrong, A., Douglas, E.A., Abate, V.M., Kaplar, R., & Kaplar, R. (2019). Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors. Journal of Electronic Materials, 48(9), pp. 5581-5585. 10.1007/s11664-019-07421-1
Yates, L., Binder, A., Dickerson, J., Pickrell, G.W., Kaplar, R., & Kaplar, R. (2019). Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs [Conference Poster]. https://www.osti.gov/biblio/1642023
Binder, A., Dickerson, J., Crawford, M.H., Pickrell, G.W., Allerman, A., Sharps, P., Kaplar, R., & Kaplar, R. (2019). Bevel Edge Termination for Vertical GaN Power Diodes [Conference Poster]. 10.1109/WiPDA46397.2019.8998835
Chen, Z., Yu, S., Mantooth, A., Atcitty, S., Kaplar, R., & Kaplar, R. (2019). Design and Fabrication of High Temperature Optocoupler for High Density Power Module [Conference Poster]. https://www.osti.gov/biblio/1642185
Veliadis, V., Kaplar, R., Zhang, J., Khalil, S., Flicker, J.D., Neely, J.C., Binder, A., Atcitty, S., Moens, P., Bakowski, M., Hollis, M., & Hollis, M. (2019). ITRW: Formulating a Roadmap for WBG and UWBG Materials and Devices [Conference Poster]. https://www.osti.gov/biblio/1642649
Madhusoodhanan, S., Sabbar, A., Dong, B., Wang, J., Atcitty, S., Kaplar, R., Mantooth, A., Yu, S., Chen, Z., & Chen, Z. (2019). High-Temperature Optical Characterization of GaN-Based Blue LEDs for Future Power Electronic Modules [Conference Poster]. https://www.osti.gov/biblio/1641101
Kaplar, R., Meneghini, M., Lelis, A., & Lelis, A. (2019). IRPS Increases its Coverage of SiC and GaN. Compound Semiconductor, 25(4). https://www.osti.gov/biblio/1544809
Flicker, J.D., Pickrell, G.W., Neely, J.C., Monson, J., Kaplar, R., & Kaplar, R. (2019). High-Reliability Ceramic Capacitors to Enable Extreme Power Density Improvements [Conference Poster]. https://www.osti.gov/biblio/1640807
Pickrell, G.W., Flicker, J.D., Neely, J.C., Mar, A., Schrock, E.A., Atcitty, S., Hjalmarson, H.P., Allerman, A., Kaplar, R., & Kaplar, R. (2019). ARC-SAFE: Accelerated Response Semiconducting Contactors and Surge Attenuation for DC Electrical Systems [Presentation]. https://www.osti.gov/biblio/1645432
Kaplar, R., Allerman, A., Gunning, B.P., Pickrell, G.W., Crawford, M.H., Armstrong, A., Dickerson, J., Binder, A., Flicker, J.D., Neely, J.C., Aktas, O., Cooper, J.A., Hobart, K., Anderson, T., Koehler, A., Tadjer, M., Gallagher, J., Ebrish, M., Porter, M., Chowdhury, S., & Chowdhury, S. (2019). 20 kV Gallium Nitride Electromagnetic Pulse Arrestor for Grid Reliability [Presentation]. https://www.osti.gov/biblio/1645441
Kaplar, R., Allerman, A., Gunning, B.P., Pickrell, G.W., Crawford, M.H., Armstrong, A., Dickerson, J., Binder, A., Flicker, J.D., Neely, J.C., Aktas, O., Cooper, J.A., Hobart, K., Anderson, T., Koehler, A., Tadjer, M., Gallagher, J., Ebrish, M., Porter, M., Chowdhury, S., & Chowdhury, S. (2019). 20 kV Gallium Nitride Electromagnetic Pulse Arrestor for Grid Reliability [Presentation]. https://www.osti.gov/biblio/1648844
Kaplar, R. (2019). VTO Electric Drivetrain Consortium Keystone #1: Power Electronics Device Research Strategy Overview [Presentation]. https://www.osti.gov/biblio/1645496
Veliadis, V., Kaplar, R., Zhang, J., Khalil, S., Flicker, J.D., Neely, J.C., Binder, A., Atcitty, S., Moens, P., Bakowski, M., Hollis, M., & Hollis, M. (2019). ITRW: Formulating a Roadmap for WBG and UWBG Materials and Devices. 10.2172/1762661
Allerman, A., Crawford, M.H., Armstrong, A., Pickrell, G.W., Kaplar, R., Baca, A., Klein, B., Dickerson, J., Lee, S.R., Abate, V.M., Smith, M.L., Glaser, C.E., & Glaser, C.E. (2019). MOCVD Growth of AlGaN Alloys for Power Transistors (invited) [Presentation]. https://www.osti.gov/biblio/1645266
Kaplar, R. (2019). Ultra-Wide-Bandgap Semiconductors for High-Power Electronics: Current Status and Future Opportunities (invited) [Presentation]. https://www.osti.gov/biblio/1644603
Baca, A.G., Klein, B., Armstrong, A., Allerman, A., Douglas, E.A., Fortune, T., Kaplar, R., & Kaplar, R. (2019). Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition [Conference Poster]. 10.1109/IRPS.2019.8720524
Kaplar, R., Baca, A.G., Klein, B., Wendt, J.R., Lepkowski, S., Nordquist, C.D., Armstrong, A., Allerman, A., Douglas, E.A., Reza, S., Flicker, J.D., & Flicker, J.D. (2019). Ultra-Wide-Bandgap Aluminum Gallium Nitride Devices for Radio-Frequency Applications (invited) [Conference Poster]. https://www.osti.gov/biblio/1639570
Kaplar, R., Baca, A.G., Klein, B., Wendt, J.R., Lepkowski, S., Nordquist, C.D., Armstrong, A., Allerman, A., Douglas, E.A., Reza, S., Flicker, J.D., & Flicker, J.D. (2019). Ultra-Wide-Bandgap Aluminum Gallium Nitride Devices for Radio-Frequency Applications [Conference Poster]. https://www.osti.gov/biblio/1598938
Baca, A.G., Klein, B., Armstrong, A., Allerman, A., Douglas, E.A., Fortune, T., Kaplar, R., & Kaplar, R. (2019). Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition [Conference Poster]. 10.1109/IRPS.2019.8720524
Kaplar, R. (2019). Ultra-Wide-Bandgap Semiconductors: Materials Devices and Applications (invited) [Presentation]. https://www.osti.gov/biblio/1601091
Baca, A.G., Klein, B., Wendt, J.R., Lepkowski, S., Nordquist, C.D., Armstrong, A., Allerman, A., Douglas, E.A., Kaplar, R., & Kaplar, R. (2019). RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with 80-nm Gates. IEEE Electron Device Letters, 40(1), pp. 17-20. 10.1109/LED.2018.2880429
Lundh, J.S., Song, Y., Chatterjee, B., Baca, A.G., Kaplar, R., Allerman, A., Armstrong, A., Kim, H., Choi, S., & Choi, S. (2019). Integrated optical probing of the thermal dynamics of wide bandgap power electronics [Conference Poster]. ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019. 10.1115/IPACK2019-6440
Kaplar, R., Allerman, A., Armstrong, A., Baca, A.G., Crawford, M.H., Dickerson, J., Douglas, E.A., Fischer, A.J., Klein, B., Reza, S., & Reza, S. (2019). III-Nitride ultra-wide-bandgap electronic devices. Semiconductors and Semimetals. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85072179801&origin=inward
Martinez, M., King, M.P., Baca, A.G., Allerman, A., Armstrong, A., Klein, B., Douglas, E.A., Kaplar, R., Swanson, S.E., & Swanson, S.E. (2019). Radiation response of AlGaN-Channel HEMTs. IEEE Transactions on Nuclear Science, 66(1), pp. 344-351. 10.1109/TNS.2018.2885526
Slobodyan, O., Flicker, J.D., Dickerson, J., Binder, A., Smith, T., Kaplar, R., Hollis, M., & Hollis, M. (2018). A New Analysis of the Dependence of Critical Electric Field on Semiconductor Bandgap. Applied Physics Reviews. https://www.osti.gov/biblio/1607506
Martinez, M., King, M.P., Baca, A.G., Allerman, A., Armstrong, A., Klein, B., Douglas, E.A., Kaplar, R., Swanson, S.E., & Swanson, S.E. (2018). Radiation Response of AlGaN-Channel HEMTs. IEEE Transactions on Nuclear Science, 66(1), pp. 344-351. https://doi.org/10.1109/TNS.2018.2885526
Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Kaplar, R., Talin, A.A., Leonard, F., Celio, K.C., Aragon, A., Stricklin, I., Monavarian, M., Feezell, D., Abate, V.M., Glaser, C.E., & Glaser, C.E. (2018). Growth of Power Devices Based on III-Nitride Semiconductors (Invited) [Conference Poster]. https://www.osti.gov/biblio/1592360
Dickerson, J., Kaplar, R., Tauke-Pedretti, A., Armstrong, A., Crawford, M.H., Allerman, A., Pickrell, G.W., & Pickrell, G.W. (2018). TCAD simulation of a 1 kV 10 A GaN MISFET Device [Conference Poster]. https://www.osti.gov/biblio/1806911
Nemanich, R., Kaplar, R., & Kaplar, R. (2018). Ultra-Wide-Bandgap Semiconductors: From Materials to Devices [Conference Poster]. https://www.osti.gov/biblio/1594698
Dickerson, J., Pickrell, G.W., Kaplar, R., & Kaplar, R. (2018). Modeling of Avalanche Breakdown in Silicon and Gallium Nitride High-Voltage Diodes using COMSOL [Conference Poster]. https://www.osti.gov/biblio/1594284
Allerman, A., Pickrell, G.W., Armstrong, A., Crawford, M.H., Celio, K.C., Talin, A.A., Leonard, F., Kaplar, R., Dickerson, J., Abate, V.M., & Abate, V.M. (2018). Material Advances Toward Vertically-Conducting AlGaN Power Transistors (invited) [Conference Poster]. https://www.osti.gov/biblio/1806968
Reza, S., Baca, A.G., Kaplar, R., & Kaplar, R. (2018). Predicted High-Frequency and High-Power Performance of AlGaN-Channel HEMTs for Radio-Frequency Applications [Conference Poster]. https://www.osti.gov/biblio/1593038
Slobodyan, O., Smith, T., Kaplar, R., & Kaplar, R. (2018). Hard-switching reliability studies of 1200 V vertical GaN PiN diodes. MRS Communications, 8(4). 10.1557/mrc.2018.204
Slobodyan, O., Smith, T., Flicker, J.D., Sandoval, S., Matthews, C., van Heukelom, M., Kaplar, R., Atcitty, S., & Atcitty, S. (2018). Hard-switching Reliability Studies of Vertical GaN 1200 V PiN Diodes [Conference Poster]. 10.1557/mrc.2018.204
Pickrell, G.W., Armstrong, A., Allerman, A., Crawford, M.H., Feezell, D., Monavarian, M., Aragon, A., Zutavern, F.J., Mar, A., Schrock, E.A., Flicker, J.D., Delhotal, J.J., Teague, J.D., Lehr, J.M., Cross, K.C., Glaser, C.E., van Heukelom, M., Gallegos, R.J., Bigman, V.H., Kaplar, R., & Kaplar, R. (2018). Advanced GaN Device Technologies for Power Electronics [Conference Poster]. https://www.osti.gov/biblio/1806873
Baca, A.G., Armstrong, A., Klein, B., Douglas, E.A., Allerman, A., Abate, V.M., Kaplar, R., & Kaplar, R. (2018). Power Electronics Devices based on Al-rich Aluminum Gallium Nitride [Conference Poster]. https://www.osti.gov/biblio/1806875
Douglas, E.A., Klein, B., Allerman, A., Armstrong, A., Kaplar, R., Baca, A.G., Neely, J.C., & Neely, J.C. (2018). High Al-Content AlGaN for Power Applications: A Fabrication Perspective [Conference Poster]. https://www.osti.gov/biblio/1582198
Martinez, M., King, M.P., Baca, A.G., Allerman, A., Armstrong, A., Klein, B., Douglas, E.A., Kaplar, R., Swanson, S.E., & Swanson, S.E. (2018). Radiation Response of AlGaN-Channel HEMTs [Conference Poster]. 10.1109/TNS.2018.2885526
Atcitty, S., Kaplar, R., & Kaplar, R. (2018). Designing High Temperature Optocoupler for Future High Density Power Module [Conference Poster]. https://www.osti.gov/biblio/1570951
Slobodyan, O., Smith, T., Flicker, J.D., Sandoval, S., Matthews, C., van Heukelom, M., Kaplar, R., Atcitty, S., & Atcitty, S. (2018). Hard-Switching Reliability Studies of 1200 V Vertical GaN PiN Diodes [Conference Poster]. 10.1557/mrc.2018.204
Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Baca, A.G., Klein, B., Douglas, E.A., Dickerson, J., Flicker, J.D., Neely, J.C., Kaplar, R., & Kaplar, R. (2018). Ultra-wide Bandgap AlGaN Alloys for Next Generation Power Electronics (invited) [Conference Poster]. https://www.osti.gov/biblio/1523361
Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Baca, A.G., Klein, B., Douglas, E.A., Dickerson, J., Kaplar, R., & Kaplar, R. (2018). Material Challlenges of Al-Rich AlGaN Alloys for Next Generation Power Electronics (invited) [Conference Poster]. https://www.osti.gov/biblio/1525586
Crawford, M.H., Allerman, A., Armstrong, A., Kaplar, R., Pickrell, G.W., Dickerson, J., Smith, M.L., Cross, K.C., Abate, V.M., Glaser, C.E., van Heukelom, M., & van Heukelom, M. (2018). Materials Challenges of AlGaN-Based Power Electronics and UV Lasers (invited) [Conference Poster]. https://www.osti.gov/biblio/1524137
Kaplar, R., Slobodyan, O., Flicker, J.D., Sandoval, S., Matthews, C., van Heukelom, M., Smith, T., Atcitty, S., Khalil, S., Bahl, S., & Bahl, S. (2018). Hard-Switching Reliabiity Studies of 1200 V Vertical GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1507032
Veliadis, V., Kaplar, R., Zhang, J., Bakowski, M., Khalil, S., Moens, P., & Moens, P. (2018). IEEE ITRW Materials and Devices Working Group Position Paper [Conference Poster]. https://www.osti.gov/biblio/1500184
Martinez, M., King, M.P., Baca, A.G., Allerman, A., Armstrong, A., Klein, B., Douglas, E.A., Kaplar, R., Swanson, S.E., & Swanson, S.E. (2018). Radiation Response of AlGaN HEMTs [Conference Poster]. https://www.osti.gov/biblio/1513702
Kaplar, R., Neely, J.C., King, M.P., Auden, E.C., Flicker, J.D., Armstrong, A., Griffin, P.J., & Griffin, P.J. (2018). Potential Impact of WBG and UWBG Devices on Realizing Radiation-Hard POwer Electronics [Conference Poster]. https://www.osti.gov/biblio/1498220
Baca, A.G., Klein, B., Allerman, A., Armstrong, A., Douglas, E.A., Stephenson, C.A., Fortune, T., Kaplar, R., & Kaplar, R. (2017). Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. ECS Journal of Solid State Science and Technology, 6(12). 10.1149/2.0231712jss
Flicker, J.D., Kaplar, R., & Kaplar, R. (2017). Design optimization of GaN vertical power diodes and comparison to Si and SiC [Conference Poster]. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. 10.1109/WiPDA.2017.8170498
Flicker, J.D., Kaplar, R., & Kaplar, R. (2017). Design optimization of GaN vertical power diodes and comparison to Si and SiC [Conference Poster]. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications Wipda 2017. 10.1109/WiPDA.2017.8170498
Mauch, D.L., Zutavern, F.J., Delhotal, J.J., King, M.P., Neely, J.C., Kizilyalli, I.C., Kaplar, R., & Kaplar, R. (2017). Ultrafast reverse recovery time measurement for wide-bandgap diodes. IEEE Transactions on Power Electronics, 32(12), pp. 9333-9341. 10.1109/tpel.2017.2657491
Neely, J.C., Kaplar, R., Sudhoff, S., Pekarek, S., Zhang, B., Flicker, J.D., Delhotal, J.J., & Delhotal, J.J. (2017). Prediction of Pareto-Optimal Performance Improvements in a Power Conversion System using GaN Devices [Conference Poster]. https://www.osti.gov/biblio/1510701
Slobodyan, O., Sandoval, S., Flicker, J.D., Kaplar, R., Matthews, C., van Heukelom, M., Atcitty, S., Aktas, O., Kizilyalli, I., & Kizilyalli, I. (2017). Switching Reliability of GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1483227
Dickerson, J., Kaplar, R., Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Cross, K.C., Glaser, C.E., van Heukelom, M., & van Heukelom, M. (2017). High Breakdown (>3000 V) Al0.3Ga0.7N PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1513591
Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., King, M.P., Cross, K.C., Glaser, C.E., van Heukelom, M., Baca, A.G., Reza, S., Klein, B., Douglas, E.A., & Douglas, E.A. (2017). Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices (invited) [Presentation]. https://www.osti.gov/biblio/1485032
Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Baca, A.G., Kaplar, R., Dickerson, J., Klein, B., Douglas, E.A., King, M.P., van Heukelom, M., & van Heukelom, M. (2017). AlGaN-Based PN Diodes for Power Electronics (invited) [Presentation]. https://www.osti.gov/biblio/1509969
Chen, Z., Yu, S., Mantooth, A., Atcitty, S., Kaplar, R., & Kaplar, R. (2017). High Temperature Optocoupler for 3D High Density Power Module [Conference Poster]. https://www.osti.gov/biblio/1510203
Slobodyan, O., Sandoval, S., Flicker, J.D., Kaplar, R., Matthews, C., van Heukelom, M., Atcitty, S., Aktas, O., Kizilyalli, I.C., & Kizilyalli, I.C. (2017). Switching Reliability Characterization of Vertical GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1480182
Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., King, M.P., Cross, K.C., Glaser, C.E., van Heukelom, M., Baca, A.G., Reza, S., Klein, B., Douglas, E.A., & Douglas, E.A. (2017). Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices [Conference Poster]. https://www.osti.gov/biblio/1480181
Kaplar, R., Allerman, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Armstrong, A., King, M.P., Baca, A.G., Klein, B., Douglas, E.A., Flicker, J.D., Neely, J.C., & Neely, J.C. (2017). Ultra-Wide-Bandgap Semiconductors for Efficient and Compact Power Conversion in Harsh Environments [Presentation]. https://www.osti.gov/biblio/1479049
Allerman, A., Crawford, M.H., Pickrell, G.W., Kaplar, R., Armstrong, A., Dickerson, J., Klein, B., King, M.P., van Heukelom, M., & van Heukelom, M. (2017). AlGaN-Based PN Diodes for Power Electronics (invited) [Conference Poster]. https://www.osti.gov/biblio/1509604
Slobodyan, O., Sandoval, S., Flicker, J.D., Kaplar, R., Matthews, C., van Heukelom, M., Atcitty, S., Kizilyalli, I., Aktas, O., & Aktas, O. (2017). Switching Reliability Characterization of Vertical GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1470826
Zhang, B., Sudhoff, S., Pekarek, S., Neely, J.C., Delhotal, J.J., Flicker, J.D., Kaplar, R., & Kaplar, R. (2017). Prediction of Pareto-Optimal Performance Improvements in a Power Conversion System using GaN Devices [Conference Poster]. 10.1109/WiPDA.2017.8170526
Tierney, B.D., Dickerson, J., Reza, S., Kaplar, R., Baca, A.G., Marinella, M., & Marinella, M. (2017). Evaluation of a 'Field Cage' for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown into the kV Regime. IEEE Transactions on Electron Devices, 64(9), pp. 3740-3747. 10.1109/ted.2017.2729544
Vizkelethy, G., King, M.P., Aktas, O., Kizilyalli, I.C., Kaplar, R., & Kaplar, R. (2017). Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 404, pp. 264-268. 10.1016/j.nimb.2016.11.031
Allerman, A., Crawford, M.H., Pickrell, G.W., Kaplar, R., Armstrong, A., Dickerson, J., Klein, B., King, M.P., van Heukelom, M., & van Heukelom, M. (2017). OMVPE Growth of Al-Rich AlGaN Alloys for Power Electronics [Conference Poster]. https://www.osti.gov/biblio/1463946
Allerman, A., Baca, A.G., Armstrong, A., Dickerson, J., King, M.P., Kaplar, R., Douglas, E.A., Klein, B., Sanchez, C.A., & Sanchez, C.A. (2017). Growth and Electrical Properties of Al-Rich AlGaN/AlGaN Heterostructures for High-Electron-Mobility Transistors [Conference Poster]. https://www.osti.gov/biblio/1464999
Neely, J.C., Stewart, J., Flicker, J.D., Delhotal, J.J., Gonzalez, S., Kaplar, R., Lehr, J., Rashkin, L.J., & Rashkin, L.J. (2017). Design & Evaluation of a Hybrid Switched Capacitor Circuit with Wide-Bandgap Devices for Compact MVDC PV Power Conversion [Conference Poster]. https://www.osti.gov/biblio/1467796
Kaplar, R., Pickrell, G.W., & Pickrell, G.W. (2017). New Ideas for SSL: Integration of III-N LEDs and Power Electronics [Presentation]. https://www.osti.gov/biblio/1469082
Douglas, E.A., Reza, S., Sanchez, C.A., Allerman, A., Klein, B., Armstrong, A., Kaplar, R., Baca, A.G., Koleske, D., & Koleske, D. (2017). Ohmic contacts to Al-rich AlGaN heterostructures. Physica Status Solidi (A) Applications and Materials Science, 214(8). 10.1002/pssa.201600842
Pickrell, G.W., Allerman, A., Crawford, M.H., Armstrong, A., Dickerson, J., King, M.P., Cross, K.C., Glaser, C.E., van Heukelom, M., Kaplar, R., & Kaplar, R. (2017). Vertical AlxGa1-xN(x=0.3 and x=0.7) PiN Diodes for Power Electronics Applications [Conference Poster]. https://www.osti.gov/biblio/1459061
Neely, J.C., Stewart, J., Flicker, J.D., Delhotal, J.J., Gonzalez, S., Kaplar, R., Lehr, J., Rashkin, L.J., & Rashkin, L.J. (2017). Design & Evaluation of a Hybrid Switched Capacitor Circuit with Wide-Bandgap Devices for Compact MVDC PV Power Conversion [Conference Poster]. https://www.osti.gov/biblio/1513630
Celio, K.C., King, M.P., Dickerson, J., Vizkelethy, G., Armstrong, A., Fischer, A.J., Allerman, A., Kaplar, R., Aktas, O., Kizilyalli, I.C., Talin, A.A., Leonard, F., & Leonard, F. (2017). Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes. IEEE Electron Device Letters, 38(7). 10.1109/led.2017.2708703
Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Baca, A.G., Flicker, J.D., Pickrell, G.W., Dickerson, J., Klein, B., Douglas, E.A., Miller, M.A., Leonard, F., Talin, A.A., Celio, K.C., Reza, S., King, M.P., Vizkelethy, G., Coltrin, M.E., & Coltrin, M.E. (2017). Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride [Conference Poster]. https://www.osti.gov/biblio/1456495
Kaplar, R. (2017). Overview of GaN Reliability Work at Sandia National Labs [Presentation]. https://www.osti.gov/biblio/1425723
Kaplar, R., Simmons, J.A., Tsao, J.Y., & Tsao, J.Y. (2017). Ultra-Wide-Bandgap Semiconductors: Summary and Recommended Research Opportunities [Conference Poster]. https://www.osti.gov/biblio/1456328
Coltrin, M.E., Baca, A.G., Kaplar, R., & Kaplar, R. (2017). Analysis of 2D transport and performance characteristics for lateral power devices based on AlGaN alloys. ECS Journal of Solid State Science and Technology, 6(11), pp. S3114-S3118. 10.1149/2.0241711jss
Hollis, M.A., Juodawlkis, P.W., Kaplar, R., & Kaplar, R. (2016). Ultrawide-Bandgap Semiconductors: Introduction and Key Parameters [Conference Poster]. https://www.osti.gov/biblio/1417565
Flicker, J.D., Brocato, R.W., Delhotal, J.J., Neely, J.C., Sumner, B., Dickerson, J., Kaplar, R., & Kaplar, R. (2016). Module-level paralleling of vertical GaN PiN diodes [Conference Poster]. WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications. 10.1109/WiPDA.2016.7799925
Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Dickerson, J., Fischer, A.J., Baca, A.G., Douglas, E.A., & Douglas, E.A. (2016). Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices. ECS Journal of Solid State Science and Technology, 6(2). 10.1149/2.0111702jss
Douglas, E.A., Sanchez, C.A., Kaplar, R., Allerman, A., Baca, A.G., & Baca, A.G. (2016). Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, 35(2). 10.1116/1.4971245
Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Baca, A.G., & Baca, A.G. (2016). Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Electronic Devices [Conference Poster]. https://www.osti.gov/biblio/1414571
Kaplar, R., Matthews, C., Flicker, J.D., van Heukelom, M., Atcitty, S., Kizilyalli, I., Aktas, O., & Aktas, O. (2016). Switching Characterization of Vertical GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1408963
Kaplar, R. (2016). Federal Panel on Next-Generation Power Electronics [Presentation]. https://www.osti.gov/biblio/1415726
Douglas, E.A., Reza, S., Sanchez, C.A., Koleske, D., Armstrong, A., Kaplar, R., Allerman, A., Baca, A.G., & Baca, A.G. (2016). Ohmic Contacts to Al0.85Ga0.15N/Al0.7Ga0.3N Heterostructure [Conference Poster]. https://www.osti.gov/biblio/1420813
Kaplar, R. (2016). Domestic WBG Power Electronics Supply Chain from a National Laboratory Perspective [Conference Poster]. https://www.osti.gov/biblio/1410253
Kaplar, R. (2016). Ultra-Wide-Bandgap Power Electronics at Sandia National Laboratories [Presentation]. https://www.osti.gov/biblio/1410755
King, M.P., Kaplar, R., Dickerson, J., Lee, S.R., Allerman, A., Crawford, M.H., Marinella, M., Flicker, J.D., Fleming, R.M., Kizilyalli, I.C., Aktas, O., Armstrong, A., & Armstrong, A. (2016). Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes. Applied Physics Letters, 109(18). 10.1063/1.4966903
Tierney, B.D., Dasgupta, S., Choi, S., Dickerson, J., Reza, S., Agarwal, S., Baca, A.G., Kaplar, R., Marinella, M., & Marinella, M. (2016). Electric Field Control of AlGaN/GaN HEMTs Operating in the kV Regime [Conference Poster]. https://www.osti.gov/biblio/1399318
Dickerson, J., Crawford, M.H., Allerman, A., King, M.P., Kaplar, R., & Kaplar, R. (2016). Numerical Simulations of III-Nitride Devices (invited) [Presentation]. https://www.osti.gov/biblio/1400048
Matthews, C., Flicker, J.D., Kaplar, R., van Heukelom, M., Atcitty, S., Kizilyalli, I., Aktas, O., & Aktas, O. (2016). Switching Characterization of Vertical GaN PiN Diodes [Conference Poster]. 10.1109/WiPDA.2016.7799924
Armstrong, A., Allerman, A., Fischer, A.J., King, M.P., van Heukelom, M., Moseley, M.W., Kaplar, R., Wierer, J.J., Crawford, M.H., Dickerson, J., Jayawardena, A., Ahyi, A., Dhar, S., & Dhar, S. (2016). Ultra-Wide Bandgap AlGaN Materials for Electronics and Opto-Electronics (invited) [Presentation]. https://www.osti.gov/biblio/1506563
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