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XyceTM Parallel Electronic Simulator Reference Guide, Version 6.3

Keiter, Eric R.; Mei, Ting M.; Russo, Thomas V.; Schiek, Richard S.; Sholander, Peter E.; Thornquist, Heidi K.; Verley, Jason V.; Baur, David G.

This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users' Guide. The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users' Guide.

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Xyce Parallel Electronic Simulator Users Guide Version 6.2

Keiter, Eric R.; Mei, Ting M.; Russo, Thomas V.; Schiek, Richard S.; Sholander, Peter E.; Thornquist, Heidi K.; Verley, Jason V.; Baur, David G.

This manual describes the use of the Xyce Parallel Electronic Simulator. Xyce has been de- signed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas: Capability to solve extremely large circuit problems by supporting large-scale parallel com- puting platforms (up to thousands of processors). This includes support for most popular parallel and serial computers. A differential-algebraic-equation (DAE) formulation, which better isolates the device model package from solver algorithms. This allows one to develop new types of analysis without requiring the implementation of analysis-specific device models. Device models that are specifically tailored to meet Sandia's needs, including some radiation- aware devices (for Sandia users only). Object-oriented code design and implementation using modern coding practices. Xyce is a parallel code in the most general sense of the phrase -- a message passing parallel implementation -- which allows it to run efficiently a wide range of computing platforms. These include serial, shared-memory and distributed-memory parallel platforms. Attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel efficiency is achieved as the number of processors grows. Trademarks The information herein is subject to change without notice. Copyright c 2002-2014 Sandia Corporation. All rights reserved. Xyce TM Electronic Simulator and Xyce TM are trademarks of Sandia Corporation. Portions of the Xyce TM code are: Copyright c 2002, The Regents of the University of California. Produced at the Lawrence Livermore National Laboratory. Written by Alan Hindmarsh, Allan Taylor, Radu Serban. UCRL-CODE-2002-59 All rights reserved. Orcad, Orcad Capture, PSpice and Probe are registered trademarks of Cadence Design Systems, Inc. Microsoft, Windows and Windows 7 are registered trademarks of Microsoft Corporation. Medici, DaVinci and Taurus are registered trademarks of Synopsys Corporation. Amtec and TecPlot are trademarks of Amtec Engineering, Inc. Xyce 's expression library is based on that inside Spice 3F5 developed by the EECS Department at the University of California. The EKV3 MOSFET model was developed by the EKV Team of the Electronics Laboratory-TUC of the Technical University of Crete. All other trademarks are property of their respective owners. Contacts Bug Reports (Sandia only) http://joseki.sandia.gov/bugzilla http://charleston.sandia.gov/bugzilla World Wide Web http://xyce.sandia.gov http://charleston.sandia.gov/xyce (Sandia only) Email xyce@sandia.gov (outside Sandia) xyce-sandia@sandia.gov (Sandia only)

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Xyce parallel electronic simulator users guide, version 6.1

Keiter, Eric R.; Mei, Ting M.; Russo, Thomas V.; Schiek, Richard S.; Sholander, Peter E.; Thornquist, Heidi K.; Verley, Jason V.

This manual describes the use of the Xyce Parallel Electronic Simulator. Xyce has been designed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas; Capability to solve extremely large circuit problems by supporting large-scale parallel computing platforms (up to thousands of processors). This includes support for most popular parallel and serial computers; A differential-algebraic-equation (DAE) formulation, which better isolates the device model package from solver algorithms. This allows one to develop new types of analysis without requiring the implementation of analysis-specific device models; Device models that are specifically tailored to meet Sandia's needs, including some radiationaware devices (for Sandia users only); and Object-oriented code design and implementation using modern coding practices. Xyce is a parallel code in the most general sense of the phrase-a message passing parallel implementation-which allows it to run efficiently a wide range of computing platforms. These include serial, shared-memory and distributed-memory parallel platforms. Attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel efficiency is achieved as the number of processors grows.

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Xyce parallel electronic simulator reference guide, version 6.1

Keiter, Eric R.; Mei, Ting M.; Russo, Thomas V.; Schiek, Richard S.; Sholander, Peter E.; Thornquist, Heidi K.; Verley, Jason V.

This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users<U+2019> Guide [1] . The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users<U+2019> Guide [1] .

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Xyce parallel electronic simulator reference guide, Version 6.0.1

Keiter, Eric R.; Mei, Ting M.; Russo, Thomas V.; Pawlowski, Roger P.; Schiek, Richard S.; Coffey, Todd S.; Thornquist, Heidi K.; Verley, Jason V.; Warrender, Christina E.

This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users Guide [1] . The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users Guide [1] .

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Xyce parallel electronic simulator users' guide, Version 6.0.1

Keiter, Eric R.; Warrender, Christina E.; Mei, Ting M.; Russo, Thomas V.; Schiek, Richard S.; Thornquist, Heidi K.; Verley, Jason V.; Coffey, Todd S.; Pawlowski, Roger P.

This manual describes the use of the Xyce Parallel Electronic Simulator. Xyce has been designed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas: Capability to solve extremely large circuit problems by supporting large-scale parallel computing platforms (up to thousands of processors). This includes support for most popular parallel and serial computers. A differential-algebraic-equation (DAE) formulation, which better isolates the device model package from solver algorithms. This allows one to develop new types of analysis without requiring the implementation of analysis-specific device models. Device models that are specifically tailored to meet Sandias needs, including some radiationaware devices (for Sandia users only). Object-oriented code design and implementation using modern coding practices. Xyce is a parallel code in the most general sense of the phrase a message passing parallel implementation which allows it to run efficiently a wide range of computing platforms. These include serial, shared-memory and distributed-memory parallel platforms. Attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel efficiency is achieved as the number of processors grows.

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Precision laser annealing of silicon devices for enhanced electro-optic performance

Proceedings of SPIE - The International Society for Optical Engineering

DeRose, Christopher T.; Starbuck, Andrew L.; Verley, Jason V.; Jenkins, Mark W.

We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. © 2014 SPIE.

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Xyce parallel electronic simulator reference guide, version 6.0

Keiter, Eric R.; Mei, Ting M.; Russo, Thomas V.; Pawlowski, Roger P.; Schiek, Richard S.; Coffey, Todd S.; Thornquist, Heidi K.; Verley, Jason V.; Warrender, Christina E.

This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users Guide [1] . The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users Guide [1] .

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Building guide : how to build Xyce from source code

Keiter, Eric R.; Russo, Thomas V.; Schiek, Richard S.; Thornquist, Heidi K.; Mei, Ting M.; Verley, Jason V.; Sholander, Peter E.

While Xyce uses the Autoconf and Automake system to configure builds, it is often necessary to perform more than the customary %E2%80%9C./configure%E2%80%9D builds many open source users have come to expect. This document describes the steps needed to get Xyce built on a number of common platforms.

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Xyce parallel electronic simulator users guide, version 6.0

Russo, Thomas V.; Mei, Ting M.; Keiter, Eric R.; Schiek, Richard S.; Thornquist, Heidi K.; Verley, Jason V.; Coffey, Todd S.; Pawlowski, Roger P.; Warrender, Christina E.

This manual describes the use of the Xyce Parallel Electronic Simulator. Xyce has been designed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas: Capability to solve extremely large circuit problems by supporting large-scale parallel computing platforms (up to thousands of processors). This includes support for most popular parallel and serial computers. A differential-algebraic-equation (DAE) formulation, which better isolates the device model package from solver algorithms. This allows one to develop new types of analysis without requiring the implementation of analysis-specific device models. Device models that are specifically tailored to meet Sandias needs, including some radiationaware devices (for Sandia users only). Object-oriented code design and implementation using modern coding practices. Xyce is a parallel code in the most general sense of the phrase a message passing parallel implementation which allows it to run efficiently a wide range of computing platforms. These include serial, shared-memory and distributed-memory parallel platforms. Attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel efficiency is achieved as the number of processors grows.

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A new time-dependent analytic model for radiation-induced photocurrent in finite 1D epitaxial diodes

Verley, Jason V.; Hembree, Charles E.; Keiter, Eric R.

Photocurrent generated by ionizing radiation represents a threat to microelectronics in radiation environments. Circuit simulation tools such as SPICE [1] can be used to analyze these threats, and typically rely on compact models for individual electrical components such as transistors and diodes. Compact models consist of a handful of differential and/or algebraic equations, and are derived by making simplifying assumptions to any of the many semiconductor transport equations. Historically, many photocurrent compact models have suffered from accuracy issues due to the use of qualitative approximation, rather than mathematically correct solutions to the ambipolar diffusion equation. A practical consequence of this inaccuracy is that a given model calibration is trustworthy over only a narrow range of operating conditions. This report describes work to produce improved compact models for photocurrent. Specifically, an analytic model is developed for epitaxial diode structures that have a highly doped subcollector. The analytic model is compared with both numerical TCAD calculations, as well as the compact model described in reference [2]. The new analytic model compares well against TCAD over a wide range of operating conditions, and is shown to be superior to the compact model from reference [2].

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Variable-angle directional emissometer for moderate-temperature emissivity measurements

Proceedings of SPIE - The International Society for Optical Engineering

Ellis, A.R.; Graham, H.M.; Sinclair, Michael B.; Verley, Jason V.

We have developed a system to measure the directional thermal emission from a surface, and in turn, calculate its emissivity. This approach avoids inaccuracies sometimes encountered with the traditional method for calculating emissivity, which relies upon subtracting the measured total reflectivity and total transmissivity from unity. Typical total reflectivity measurements suffer from an inability to detect backscattered light, and may not be accurate for high angles of incidence. Our design allows us to vary the measurement angle (θ) from near-normal to ∼80°, and can accommodate samples as small as 7 mm on a side by controlling the sample interrogation area. The sample mount is open-backed to eliminate shine-through, can be heated up to 200°C, and is kept under vacuum to avoid oxidizing the sample. A cold shield reduces the background noise and stray signals reflected off the sample. We describe the strengths, weaknesses, trade-offs, and limitations of our system design, data analysis methods, the measurement process, and present the results of our validation of this Variable-Angle Directional Emissometer.

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Results 51–75 of 89
Results 51–75 of 89