Publications

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Radiation-hard high-voltage vertical GaN p-n diodes are being developed for use in power electronics subjected to ionizing radiation. We present a comparison of the measured and simulated photocurrent response of diodes exposed to ionizing irradiation with 70 keV and 20 MeV electrons at dose rates in the range of 1.4× 107 - 5.0× 108 rad(GaN)/s. The simulations correctly predict the trend in the measured steady-state photocurrent and agree with the experimental results within a factor of 2. Furthermore, simulations of the transient photocurrent response to dose rates with uniform and non-uniform ionization depth profiles uncover the physical processes involved that cannot be otherwise experimentally observed due to orders of magnitude larger RC time constant of the test circuit. The simulations were performed using an eXploratory Physics Development code developed at Sandia National Laboratories. The code offers the capability to include defect physics under more general conditions, not included in commercially available software packages, extending the applicability of the simulations to different types of radiation environments.

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

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Two methods are examined for extending the life of tritium targets for production of 14 MeV neutrons by the 3H(2H,n)4He nuclear reaction. With thick film targets the neutron production rate decreases with time due to isotope exchange of tritium in the film with implanted deuterium. In this case, the target life is maximized by operating the target at elevated temperature where the implanted deuterium mixes by thermal diffusion throughout the entire thickness of the film. The number of neutrons obtained from a target is then proportional to the initial tritium content of the film. A novel thin-film target design was also developed and tested. With these thin-film targets, the incident deuterium is implanted through the tritide into the underlying substrate material. A thin permeation barrier layer between the tritide film and substrate, reduces the rate of tritium loss from the tritide film. Good thin-film target performance was achieved using W and Fe for the barrier and substrate materials respectively. Thin-film targets were fabricated and tested and shown to produce similar number of neutrons as thick-film targets while using only a small fraction of the amount of tritium.

Single crystalline W (tungsten) samples irradiated at 633, 963 and 1073 K by neutrons to a damage level of 0.1 dpa were exposed to a high-flux D (deuterium) plasma at 673, 873 and 973 K, respectively, in TPE (Tritium Plasma Experiment) at INL (Idaho National Laboratory). Deuterium desorption was analyzed by TDS (Thermal Desorption Spectroscopy), and D depth profiles were determined by NRA (Nuclear Reaction Analysis) at SNL (Sandia National Laboratories). HIDT (Hydrogen Isotope Diffusion and Trapping) simulation code was applied to evaluate D behavior for neutron-damaged W at higher temperature. The D retention at depths up to 3 μm for the neutron-damaged sample at 673 K was two orders of magnitude larger than that for undamaged tungsten, and its D desorption spectrum had a single broad stage at around 900 K. As the neutron irradiation/plasma exposure temperature increased, D retention was largely reduced, and the desorption temperature was shifted to higher temperatures above 1100 K. The D depth profiles by NRA also showed D migration toward bulk by higher temperature irradiation, compared to undamaged W. The HIDT simulation indicated that the major binding energy of D was changed from 1.43 eV to 2.07 eV at higher neutron irradiation and plasma exposure temperatures, suggesting that some vacancies and small vacancy clusters would aggregate to form larger voids, or depopulation of weak traps at high D plasma exposure temperatures. It can be said that more stable trapping sites played dominant roles in the D retention at higher neutron irradiation and plasma exposure temperature. The binding energy by HIDT simulation was almost consistent with the reported value by TMAP, but the consideration of not only total D retention measured by TDS but also D depth profile by NRA led to the more accurate D behavior in neutron-damaged W.

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A recently completed LDRD project has provided a new facility at Sandia for testing effects of energetic neutrons on electronic components. 14 MeV neutrons are produced with a deuterium ion beam onto a thin-film tritide target. The goal of the project was to increase the neutron fluence to levels needed for radiation effects testing and qualification. This goal was achieved through two technical advances. First, a new multi-layer target concept was developed to reduce the rate of tritium loss from the target by isotope exchange, thereby reducing tritium usage and increasing target lifetime. The second advance was the construction of a new test chamber designed to maximize neutron flux at test locations. Together, these increased the available neutron fluence by several orders of magnitude. This new capability is being used in tests for Sandia nuclear weapon programs, evaluation of commercial parts such as highly-scaled CMOS SRAM lCs, and tests of new devices under development at Sandia such as lll-V HBTs, gallium nitride high-voltage diodes, and for fundamental studies of physical mechanisms of device failure.

Accurate predictions of device performance in 14-MeV neutron environments rely upon understanding the recoil cascades that may be produced. Recoils from 14-MeV neutrons impinging on both gallium nitride (GaN) and gallium arsenide (GaAs) devices were modeled and compared to the recoil spectra of devices exposed to 14-MeV neutrons. Recoil spectra were generated using nuclear reaction modeling programs and converted into an ionizing energy loss (IEL) spectrum. We measured the recoil IEL spectra by capturing the photocurrent pulses produced by single neutron interactions with the device. Good agreement, with a factor of two, was found between the model and the experiment under strongly depleted conditions. However, this range of agreement between the model and the experiment decreased significantly when the bias was removed, indicating partial energy deposition due to cascades that escape the active volume of the device not captured by the model. Consistent event rates across multiple detectors confirm the reliability of our neutron recoil detection method.

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Experiments carried out on DIII-D using a novel setup of isotopic tungsten (W) sources in the outer divertor have characterized how the W leakage from this region depends on both the exact source location and edge-localized mode (ELM) behavior. The sources are toroidally-symmetric and poloidally-localized to two regions: (1) the outer strike point (OSP) with natural abundance of W isotopes; and (2) the far-target with highly-enriched ¹⁸²W isotopes. With the use of a dual-faced collector probe (CP) in the main scrape-off layer (SOL) near the outside midplane and source-rate spectroscopy, a proxy for divertor impurity leakage is developed herein. Using this proxy, it is found that for the OSP W location, there is a nearly linear increase of leakage with the power across the separatrix (), which is consistent with the effect of an increased upstream ion temperature parallel gradient force in the near-SOL; trends in the pedestal density and collisionality are also seen. Conversely, it is found that for the far-target W location leakage falls off rapidly as increases and ELM size decreases, which is suggestive that ELM size plays a role in the leakage from this location. Indications for main SOL W contamination is evidenced by the measurement of large deposition asymmetries on the two opposite CP faces. These measurements are coupled with interpretive modeling showing SOL W accumulation near the separatrix furthest from both targets driven by forces parallel to the magnetic field. This experimental setup, together with the target and upstream W measurements, provides information on the transport from different divertor W source locations and leakage. These studies help to elucidate the physics driving divertor impurity source rates and leakage, with and without ELMs, and provide better insight on the link in the chain connecting wall impurity sources to core impurity levels in magnetic fusion devices.

This report documents work done at the Sandia Ion Beam Laboratory to develop a capability to produce 14 Me neutrons at levels sufficient for testing radiation effects on electronic materials and components. The work was primarily enabled by a laboratory directed research and development (LDRD) project. The main elements of the work were to optimize target lifetime, test a new thin- film target design concept to reduce tritium usage, design and construct a new target chamber and beamline optimized for high-flux tests, and conduct tests of effects on electronic devices and components. These tasks were all successfully completed. The improvements in target performance and target chamber design have increased the flux and fluence of 14 MV neutrons available at the test location by several orders of magnitude. The outcome of the project is that a new capability for testing radiation-effects on electronic components from 14 MeV neutrons is now available at Sandia National Laboratories. This capability has already been extensively used for many qualification and component evaluation and development tests.

One of the main advantages of using tungsten (W) as a plasma facing material (PFM) is its low uptake and retention of tritium. However, in high purity (ITER grade) W, hydrogenic retention increases significantly with neutron-induced displacement damage in the W lattice. This experiment examines an alternative W grade PFM, ultra-fine grain (UFG) W, to compare its retention properties with ITER grade W after 12 MeV Si ion displacement damage up to 0.6 dpa (displacements per atom.) Following exposure to plasma in the DIII-D divertor, D retention was then assessed with Nuclear Reaction Analysis (NRA) depth profiling up to 3.5 µm and thermal desorption spectrometry (TDS). Undamaged specimens were also included in our test matrix for comparison. For all samples, D release peaks were observed during TDS at approximately 200 °C and 750 °C. For the ITER-grade W specimens, the intensity of the 750 °C release peak was more pronounced for specimens that had been pre-damaged.

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Triplet sets of replaceable graphite rod collector probes (CPs), each with collection surfaces on opposing faces and oriented normal to the magnetic field, were inserted at the outboard mid-plane of DIII-D to study divertor tungsten (W) transport in the Scrape-Off Layer (SOL). Each CP collects particles along field lines with different parallel sampling lengths (determined by the rod diameters and SOL transport) giving radial profiles from the main wall inward to R-Rsep ∼ 6 cm. The CPs were deployed in a first-of-a-kind experiment using two toroidal rings of distinguishable isotopically enriched, W-coated divertor tiles installed at 2 poloidal locations in the divertor. Post-mortem Rutherford backscatter spectrometry of the surface of the CPs provided areal density profiles of elemental W coverage. Higher W content was measured on the probe side facing along the field lines toward the inner target indicating higher concentration of W in the plasma upstream of the CP, even though the W-coated rings were in the outer target region of the divertor. Inductively coupled plasma mass spectroscopy validates the isotopic tracer technique through analysis of CPs exposed during L-mode discharges with the outer strike point on the isotopically enriched W coated-tile ring. The contribution from each divertor ring of W to the deposition profiles found on the mid-plane collector probes was able to be de-convoluted using a stable isotope mixing model. The results provided quantitative information on the W source and transport from specific poloidal locations within the lower divertor region.

We present analysis and modeling of Al sputtering and ionization in attached, low-power L-mode plasmas near the outer divertor strike point of the DIII-D tokamak. Al serves as a useful proxy for Be, the low-Z main wall material for ITER and JET that will undergo significant divertor plasma contact upon migrating from the first wall to the divertor. Al is easily distinguishable from background sources in DIII-D (namely C and B), has a high physical sputtering yield similar to Be, and has a long ionization mean free path compared to its gyro radius ({λi} /rgyro ∼ 2.5). Using neutral Al emission imaging techniques, we measured a toroidal and radial asymmetry in the shape of the photo-emission plumes of sputtered neutral Al that was consistent with previously observed asymmetry in the distribution of redeposited Al in these experiments. We propose that the main cause of the emission and redeposition asymmetry is due to a sputtering anisotropy caused by near-grazing angle incident ions. The observed emission asymmetry was reproduced using a simple emission/ionization model that included full angular distributions of sputtering yield and energy calculated by SDTRIM.SP, but not when symmetric, mono-energetic cosine sputtering distributions were assumed. We used an ion orbit tracking model to calculate the distributions of ion impact energies through the potential gradient in the magnetic pre-sheath and Debye sheath. We found that with the magnetic field pitch angle (1.5°-2° with respect to the surface plane), the majority of ions strike the surface at <15° with respect to the surface plane, leading to angular sputtering yield and energy distributions with significant forward-scattering bias. We also observed surface microstructure consistent with directional sputtering and ion flux shadowing expected from the calculated ion incidence angles.

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An experiment was conducted in DIII-D to compare gross tungsten (W) erosion on samples exposed to outer strike point (OSP) sweeps in L-mode plasmas for three conditions. These included two phases of resonant magnetic perturbations (RMPs), and a set with no perturbations. Upon RMP application, lobe structures indicative of strike point splitting of the OSP were evident in divertor camera data and on Langmuir probes. Gross W erosion flux, GW, inferred spectroscopically using the S/XB method applied to the 400.9 nm W-I line, was generally in the range ΓW/ΓD +,⊥ = 2 × 10-4 referenced to incident deuterium ion flux ΓD+,⊥, and was increased in the RMP cases by no more than 30% of the level observed in unperturbed discharges. A large reduction in gross erosion (50%) was observed in the private flux region at the W sample for one specific toroidal phase of the RMP field.

An experimental study of migration of tungsten in the DIII-D divertor is described, in which the outer strike point of L-mode plasmas was positioned on a toroidal ring of tungsten-coated metal inserts. Net deposition of tungsten on the divertor just outside the strike point was measured on graphite samples exposed to various plasma durations using the divertor materials evaluation system. Tungsten coverage, measured by Rutherford backscattering spectroscopy (RBS), was found to be low and nearly independent of both radius and exposure time closer to the strike point, whereas farther from the strike point the W coverage was much larger and increased with exposure time. Depth profiles from RBS show this was due to accumulation of thicker mixedmaterial deposits farther from the strike point where the plasma temperature is lower. These results are consistent with a low near-surface steady-state coverage on graphite undergoing net erosion, and continuing accumulation in regions of net deposition. This experiment provides data needed to validate, and further improve computational simulations of erosion and deposition of material on plasma-facing components and transport of impurities in magnetic fusion devices. Such simulations are underway and will be reported later.

The formulation of carrier transport through heterojunctions by tunneling and thermionic emission is derived from first principles. The treatment of tunneling is discussed at three levels of approximation: numerical solution of the one-band envelope equation for an arbitrarily specified potential profile; the WKB approximation for an arbitrary potential; and, an analytic formulation assuming constant internal field. The effects of spatially varying carrier chemical potentials over tunneling distances are included. Illustrative computational results are presented. The described approach is used in exploratory physics models of irradiated heterojunction bipolar transistors within Sandia's QASPR program.

The energy-dependent probability density of tunneled carrier states for arbitrarily specified longitudinal potential-energy profiles in planar bipolar devices is numerically computed using the scattering method. Results agree accurately with a previous treatment based on solution of the localized eigenvalue problem, where computation times are much greater. These developments enable quantitative treatment of tunneling-assisted recombination in irradiated heterojunction bipolar transistors, where band offsets may enhance the tunneling effect by orders of magnitude. The calculations also reveal the density of non-tunneled carrier states in spatially varying potentials, and thereby test the common approximation of uniform- bulk values for such densities.

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It is important to develop a predictive capability for the tungsten source rate near the strike points during H-mode operation in ITER and beyond. H-mode deuterium plasma exposures were performed on W-coated graphite and molybdenum substrates in the DIII-D divertor using DiMES. The W-I 400.9 nm spectral line was monitored by fast filtered diagnostics cross calibrated via a high-resolution spectrometer to resolve inter-ELM W erosion. The effective ionization/photon (S/XB) was calibrated using a unique method developed on DIII-D based on surface analysis. Inferred S/XB values agree with an existing empirical scaling at low electron density (n e) but diverge at higher densities, consistent with recent ADAS atomic physics modeling results. Edge modeling of the inter-ELM phase is conducted via OEDGE utilizing the new capability for charge-state resolved carbon impurity fluxes. ERO modeling is performed with the calculated main ion and impurity plasma background from OEDGE. ERO results demonstrate the importance a mixed-material surface model in the interpretation of W sourcing measurements. It is demonstrated that measured inter-ELM W erosion rates can be well explained by C→W sputtering only if a realistic mixed material model is incorporated.

Dedicated DIII-D experiments coupled with modeling reveal that the net erosion rate of high-Z materials, i.e. Mo and W, is strongly affected by carbon concentration in the plasma and the magnetic pre-sheath properties. Different methods such as electrical biasing and local gas injection have been investigated to control high-Z material erosion. The net erosion rate of high-Z materials is significantly reduced due to the high local re-deposition ratio. The ERO modeling shows that the local re-deposition ratio is mainly controlled by the electric field and plasma density within the magnetic pre-sheath. The net erosion can be significantly suppressed by reducing the sheath potential drop. A high carbon impurity concentration in the background plasma is also found to reduce the net erosion rate of high-Z materials. Both DIII-D experiments and modeling show that local 13CH4 injection can create a carbon coating on the metal surface. The profile of 13C deposition provides quantitative information on radial transport due to E × B drift and the cross-field diffusion. The deuterium gas injection upstream of the W sample can reduce W net erosion rate by plasma perturbation. In H-mode plasmas, the measured inter-ELM W erosion rates at different radial locations are well reproduced by ERO modeling taking into account charge-state-resolved carbon ion flux in the background plasma calculated using the OEDGE code.

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Carrier transport and recombination are modeled for a heterojunction diode containing irradiation defects. Detailed attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the one-band effective-mass envelope equation. The interaction with traps is treated assuming capture by the multi-phonon-emission mechanism. It is shown that tunneling can increase carrier recombination at defects by orders of magnitude in the presence of large band offsets. This explains why Npn InGaP/GaAs/GaAs heterojunction bipolar transistors with displacement damage from energetic-particle irradiation are observed to have high carrier recombination in the emitter-base depletion region.

A major challenge facing the design and operation of next-step high-power steady-state fusion devices is to develop a viable divertor solution with order-of-magnitude increases in power handling capability relative to present experience, while having acceptable divertor target plate erosion and being compatible with maintaining good core plasma confinement. A new initiative has been launched on DIII-D to develop the scientific basis for design, installation, and operation of an advanced divertor to evaluate boundary plasma solutions applicable to next step fusion experiments beyond ITER. Developing the scientific basis for fusion reactor divertor solutions must necessarily follow three lines of research, which we plan to pursue in DIII-D: (1) Advance scientific understanding and predictive capability through development and comparison between state-of-the art computational models and enhanced measurements using targeted parametric scans; (2) Develop and validate key divertor design concepts and codes through innovative variations in physical structure and magnetic geometry; (3) Assess candidate materials, determining the implications for core plasma operation and control, and develop mitigation techniques for any deleterious effects, incorporating development of plasma-material interaction models. These efforts will lead to design, installation, and evaluation of an advanced divertor for DIII-D to enable highly dissipative divertor operation at core density (n e/n GW), neutral fueling and impurity influx most compatible with high performance plasma scenarios and reactor relevant plasma facing components (PFCs). This paper highlights the current progress and near-term strategies of boundary/PMI research on DIII-D.

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