Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2.
A 0.2-2 GHz digitally programmable RF delay element based on a time-interleaved multi-stage switched-capacitor (TIMS-SC) approach is presented. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. The delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55-448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm2 area efficiency. The device achieves 24 dB gain, 7.1 dB noise figure, and consumes 80 mW from a 1 V supply with an active area of 1.36 mm2.
An RF switch technique applying differential signal cancellation is presented. The proposed approach enables high isolation and extremely small size by employing cascode current steering within a differential amplifier. Unlike series RF switches, isolation is limited by device mismatch, not switch parasitic capacitance, enabling high frequency operation. Since the switch is within the already present cascode devices, there is no additional insertion loss from the switch. The switch was implemented in a 180 nm CMOS process within an amplifier as part of an on-chip receiver and achieves 36-43 dB isolation across 0.5-2 GHz, while occupying an area of only 0.0006 mm2.