Update on Elevated Temperature Reliability Testing of 1200 V SiC MOSFETs
Abstract not provided.
Publications
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Jump to search filtersImpact Study of Value-Added Functionality on Inverter Reliability in Stationary Energy Storage Systems
Abstract not provided.
Interaction of Defects with Quantum Well States: Electrostatic-Dependant Response Time for Traps in AlGaN/GaN HEMTs
Abstract not provided.
Progress in SiC MOSFET Reliability
Abstract not provided.
Characterization of DETL 250kW CAT C9 Generator
Abstract not provided.
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Abstract not provided.
Band offsets at the La2O3/(0001)GaN heterointerface as measured by photoelectron spectroscopy
Abstract not provided.
Effect of Interaction of Deep Levels with Quantum Well States on Stress-Time-Dependant Trap Response in High-Voltage AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices
Abstract not provided.
A Photocapacitance Decay Technique for Interface Trap Characterization near Inversion Band in Wide Bandgap MOS Capacitors
IEEE Transactions on Electron Devices
Abstract not provided.
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Abstract not provided.
Effect of Interaction with Quantum Well States on Response Times for Deep Level Defects in AlGaN/GaN HEMTs
Abstract not provided.
Band offsets of La2O3 on (0001) GaN grown by reactive molecular-beam epitaxy
Applied Physics Letters
La2O3 films were prepared on (0001)-oriented GaN substrates via reactive molecular-beam epitaxy. Film orientation and phase were assessed using reflection high-energy electron and X-ray diffraction. Films were observed to grow as predominantly hexagonal La2O3 for thicknesses less than 10 nm while film thickness greater than 10 nm favored mixed cubic and hexagonal symmetries. Band offsets were characterized by X-ray photoelectron spectroscopy on hexagonally symmetric films and valence band offsets of 0.63 ± 0.04 eV at the La2O3/GaN interface were measured. A conduction band offset of approximately 1.5 eV could be inferred from the measured valence band offset. © 2013 AIP Publishing LLC.
Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Wide-Bandgap Power Semiconductor Research at Sandia National Laboratories
Abstract not provided.
Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Characterization and Reliability of SiC- and GaN-Based Power Transistors
Abstract not provided.
GaN-based wide-bandgap power switching devices: From atoms to the grid
ECS Transactions
Emerging semiconductor switches based on the wide-bandgap semiconductor GaN have the potential to significantly improve the efficiency of portable power applications such as transportable energy storage. Such applications are likely to become more widespread as renewables such as wind and solar continue to come on-line. However, the long-term reliability of GaN-based power devices is relatively unexplored. In this paper, we describe joint work between Sandia National Laboratories and MIT on highvoltage AlGaN/GaN high electron mobility transistors. It is observed that the nature of current collapse is a strong function of bias conditions as well as device design, where factors such as Al composition in the barrier layer and surface passivation play a large role. Thermal and optical recovery experiments are performed to ascertain the nature of charge trapping in the device. Additionally, Kelvin-force microscopy measurements are used to evaluate the surface potential within the device. © The Electrochemical Society.
Renewable Energy & Efficiency for Alaska Native Villages
Abstract not provided.
The Role of Barrier Structure in Current Collapse of AlGaN/GaN High Electron Mobility Transistors with Thick AlGaN Barriers
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Engineered gate oxides for wide bandgap semiconductor MOSFETs
Abstract not provided.
Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs
Abstract not provided.
SiO2/SiC Interface Trap Extraction with MOS Capacitors
Abstract not provided.
High Temperature Reliability of 1200 V 33 A SiC DMOSFETs
Abstract not provided.
The Role of Barrier Structure in Current Collapse of AlGaN/GaN High Electron Mobility Transistors with Thick AlGaN Barriers
Proposed for publication in Applied Physics Letters.
Abstract not provided.
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