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Menk, L., Baca, E., Blain, M., Smith, A., Dominguez, J., McClain, J., Yeh, P.D., Hollowell, A.E., & Hollowell, A.E. (2019). Bottom-up copper filling of large scale through silicon vias for MEMS technology. Journal of the Electrochemical Society, 166(1), pp. D3066-D3071. 10.1149/2.0091901jes

Hollowell, A.E., Menk, L., Baca, E., Blain, M., McClain, J., Dominguez, J., Smith, A., & Smith, A. (2018). Galvanostatic Plating with a Single Additive Electrolyte for Bottom-Up Filling of Copper in Mesoscale TSVs. Journal of the Electrochemical Society, 166(1). 10.1149/2.0271901jes

Carroll, M.S., Shirkhorshidian, A., Gamble, J.K., Maurer, L., Carr, S.M., Dominguez, J., Ten Eyck, G.A., Wendt, J.R., Nielsen, E., Jacobson, N.T., Lilly, M., & Lilly, M. (2018). Spectroscopy of Multielectrode Tunnel Barriers. Physical Review Applied, 10(4). 10.1103/PhysRevApplied.10.044003

Rudolph, M., Harvey-Collard, P., Jock, R.M., Jacobson, N.T., Wendt, J.R., Pluym, T., Dominguez, J., Ten Eyck, G.A., Manginell, R., Lilly, M., Carroll, M.S., Sharma, P.A., & Sharma, P.A. (2018). Coupling MOS Quantum Dot and Phosphorous Donor Qubit Systems [Conference Poster]. 10.1109/IEDM.2016.7838537

Carroll, M.S., Harvey-Collard, P., Anjou, M., Rudolph, M., Jacobson, N.T., Dominguez, J., Ten Eyck, G.A., Wendt, J.R., Pluym, T., Lilly, M., Coish, W., Pioro-Ladriere, M., & Pioro-Ladriere, M. (2018). High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism. Physical Review. X, 8(2). 10.1103/PhysRevX.8.021046

Carroll, M.S., Harvey-Collard, P., Anjou, M., Rudolph, M., Jacobson, N.T., Dominguez, J., Ten Eyck, G.A., Wendt, J.R., Pluym, T., Lilly, M., Coish, W., Pioro-Ladriere, M., & Pioro-Ladriere, M. (2018). High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism. Physical Review. X, 8(2). 10.1103/PhysRevX.8.021046

Carroll, M.S., Harvey-Collard, P., Jacobson, N.T., Rudolph, M., Wendt, J.R., Pluym, T., Foulk, J.W., Pioro-Ladriere, M., Dominguez, J., & Dominguez, J. (2017). Coherent coupling between a quantum dot and a donor in silicon. Nature Communications, 8(1). 10.1038/s41467-017-01113-2

Rudolph, M., Jock, R.M., Jacobson, N.T., Wendt, J.R., Pluym, T., Dominguez, J., Ten Eyck, G.A., Manginell, R., Lilly, M., Carroll, M.S., & Carroll, M.S. (2017). Two-axis control of a coupled quantum dot - donor qubit in Si-MOS [Conference Poster]. https://www.osti.gov/biblio/1427956

Jock, R.M., Rudolph, M., Harvey-Collard, P., Jacobson, N.T., Wendt, J.R., Pluym, T., Dominguez, J., Manginell, R., Lilly, M., Carroll, M.S., & Carroll, M.S. (2017). Tunnel coupling tuning of a QD-donor S-T qubit [Conference Poster]. https://www.osti.gov/biblio/1426411

Carroll, M.S., Rochette, S., Rudolph, M., Roy, A., Curry, M., Ten Eyck, G.A., Dominguez, J., Manginell, R., Pluym, T., Foulk, J.W., Lilly, M., Oxton-Bureau, C., Pioro-Ladriere, M., & Pioro-Ladriere, M. (2017). A split accumulation gate architecture for silicon MOS quantum dots [Conference Poster]. https://www.osti.gov/biblio/1426389

Mounce, A.M., Rudolph, M., Jacobson, N.T., Harvey-Collard, P., Wendt, J.R., Pluym, T., Dominguez, J., Carroll, M.S., & Carroll, M.S. (2017). Magnetic field and angular dependent singlet-triplet rotations in a donor-quantum dot qubit [Conference Poster]. https://www.osti.gov/biblio/1426375

Rudolph, M., Jock, R.M., Jacobson, N.T., Wendt, J.R., Pluym, T., Dominguez, J., Ten Eyck, G.A., Manginell, R., Lilly, M., Carroll, M.S., Harvey-Collard, P., & Harvey-Collard, P. (2017). Coupling MOS quantum dot and phosphorous donor qubit systems. Technical Digest - International Electron Devices Meeting, IEDM, 2016, pp. 34.1.1-34.1.4. 10.1109/IEDM.2016.7838537

Hollowell, A.E., Arrington, C.L., Bauer, T.M., Blain, M., Dagel, A., Dominguez, J., Goeke, R.S., Heller, E.J., Jarecki, R., Loviza, B.G., McClain, J., Menk, L., Ortega, A.C., Pillars, J.R., Resnick, P., Timon, R., & Timon, R. (2016). Utilizing Electroplating for High Aspect Ratio Mesoscale Fabrication - Filling Forming and Coating [Presentation]. https://www.osti.gov/biblio/1416704

Carroll, M.S., Rochette, S., Rudolph, M., Roy, A., Curry, M., Ten Eyck, G.A., Dominguez, J., Manginell, R., Pluym, T., Foulk, J.W., Lilly, M., Bureau-Oxton, C., Pioro-Ladriere, M., & Pioro-Ladriere, M. (2016). A split accumulation gate architecture for silicon MOS quantum dots [Conference Poster]. https://www.osti.gov/biblio/1408958

Carroll, M.S., Rochette, S., Rudolph, M., Roy, A., Curry, M., Ten Eyck, G.A., Dominguez, J., Manginell, R., Pluym, T., Foulk, J.W., Lilly, M., Bureau-Oxton, C., Pioro-Ladriere, M., & Pioro-Ladriere, M. (2016). A split accumulation gate architecture for silicon MOS quantum dots [Conference Poster]. https://www.osti.gov/biblio/1408959

Rudolph, M., Harvey-Collard, P., Jock, R.M., Jacobson, N.T., Wendt, J.R., Pluym, T., Dominguez, J., Ten Eyck, G.A., Manginell, R., Lilly, M., Carroll, M.S., & Carroll, M.S. (2016). Coupling MOS Quantum Dot and Phosphorous Donor Qubit Systems [Conference Poster]. 10.1109/IEDM.2016.7838537

Menk, L., Arrington, C.L., Bauer, T.M., Blain, M., Dominguez, J., Dyer, I.D., Goeke, R.S., Han, S.M., Heller, E.J., Hollowell, A.E., Jarecki, R., Loviza, B.G., McClain, J., Pillars, J.R., Resnick, P., st John, C., Timon, R., & Timon, R. (2016). ALD Platinum Surface Preparation and Copper Electrodeposition in Blind Mesoscale Through-Silicon-Vias [Conference Poster]. https://www.osti.gov/biblio/1505438

Hollowell, A.E., Arrington, C.L., Bauer, T.M., Blain, M., Dominguez, J., Goeke, R.S., Heller, E.J., Jarecki, R., Loviza, B.G., McClain, J., Menk, L., Ortega, A.C., Pillars, J.R., Resnick, P., Timon, R., & Timon, R. (2016). A Unique 3D Integration Approach for SOI Substrates [Conference Poster]. https://www.osti.gov/biblio/1397106

Lu, T.M., Foulk, J.W., Muller, R.P., Nielsen, E., Bethke, D., Ten Eyck, G.A., Pluym, T., Wendt, J.R., Dominguez, J., Lilly, M., Carroll, M.S., Wanke, M.C., & Wanke, M.C. (2016). Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer. Applied Physics Letters, 109(9). 10.1063/1.4961889

Luhman, D.R., Lu, T.M., Foulk, J.W., Muller, R.P., Nielsen, E., Bethke, D., Ten Eyck, G.A., Pluym, T., Wendt, J.R., Dominguez, J., Lilly, M., Carroll, M.S., Wanke, M.C., & Wanke, M.C. (2016). Fabrication of Quantum Dots in Undoped SiGe with a single metal layer [Conference Poster]. https://www.osti.gov/biblio/1372196

Brener, I., Guo, R., Rusak, E., Staude, I., Dominguez, J., Decker, M., Author, N., Rockstuhl, C., Neshev, D.N., Kivshar, Y.S., & Kivshar, Y.S. (2016). Multipolar Coupling in Hybrid Metal-Dielectric Metasurfaces. ACS Photonics, 3(3), pp. 349-353. 10.1021/acsphotonics.6b00012

Sharma, P.A., Abraham, J.B.S., Bielejec, E.S., Pacheco, J.L., Singh, M., Pluym, T., Dominguez, J., Carroll, M.S., & Carroll, M.S. (2016). Photon-based Characterization of Single Ion Geiger Mode Avalanche Detectors: Experiments and Simulations [Conference Poster]. https://www.osti.gov/biblio/1346312

Carroll, M.S., Harvey-Collard, P., Jacobson, N.T., Rudolph, M., Dominguez, J., Ten Eyck, G.A., Wendt, J.R., Pluym, T., Foulk, J.W., Lilly, M., Pioro-Ladriere, M., & Pioro-Ladriere, M. (2016). Nuclear-driven electron spin rotations in a single donor coupled to a silicon quantum dot. Science. 10.1038/s41467-017-01113-2

Brener, I., Chong, K., Wang, L., Staude, I., Decker, M., Neshev, D., Kivshar, Y., James, A.R., Dominguez, J., Subramania, G.S., Liu, S., & Liu, S. (2015). Highly-efficient All-dielectric Huygens? Surfaces Holograms [Conference Poster]. https://www.osti.gov/biblio/1335555

Brener, I., Chong, K., Wang, L., Staude, I., Decker, M., Neshev, D., Kivshar, Y., James, A.R., Dominguez, J., Subramania, G.S., Liu, S., & Liu, S. (2015). An Efficient Holographic Huygens? Metasurface based on Dielectric Resonant Meta-Atoms. OPtica. https://www.osti.gov/biblio/1427192

Singh, M., Pacheco, J.L., Perry, D.L., Ten Eyck, G.A., Wendt, J.R., Pluym, T., Dominguez, J., Manginell, R., Luhman, D.R., Bielejec, E.S., Lilly, M., Carroll, M.S., & Carroll, M.S. (2015). Silicon Quantum Dots with Counted Antimony Donor Implants. Sandia journal manuscript; Not yet accepted for publication. https://www.osti.gov/biblio/1427277

Chong, K.E., Staude, I., James, A.R., Dominguez, J., Liu, S., Campione, S., Subramania, G.S., Luk, T.S., Decker, M., Neshev, D.N., Brener, I., Kivshar, Y.S., & Kivshar, Y.S. (2015). Polarization-Independent Silicon Metadevices for Efficient Optical Wavefront Control. Nano Letters, 15(8), pp. 5369-5374. 10.1021/acs.nanolett.5b01752

Sharma, P.A., Ten Eyck, G.A., Ward, D.R., Dominguez, J., Childs, K.D., Wendt, J.R., Lilly, M., Carroll, M.S., & Carroll, M.S. (2015). Evaluation of strained silicon on insulator for SET based single donor spin read-out [Conference Poster]. https://www.osti.gov/biblio/1241107

Lilly, M., Luhman, D.R., Tracy, L.A., Ten Eyck, G.A., Dominguez, J., Pluym, T., Carroll, M.S., Wendt, J.R., & Wendt, J.R. (2014). Manipulating single electrons in semiconductor devices for quantum computing [Presentation]. https://www.osti.gov/biblio/1244864

Rudolph, M., Carr, S.M., Subramania, G.S., Ten Eyck, G.A., Dominguez, J., Pluym, T., Lilly, M., Carroll, M.S., Bussmann, E., & Bussmann, E. (2014). Probing the limits of STM field-emission-patterned Si:P δ-doped devices [Presentation]. https://www.osti.gov/biblio/1497811

Rudolph, M., Carr, S.M., Subramania, G.S., Ten Eyck, G.A., Dominguez, J., Pluym, T., Lilly, M., Carroll, M.S., Bussmann, E., & Bussmann, E. (2014). Probing the limits of STM field-emission patterned Si:P δ-doped devices [Presentation]. https://www.osti.gov/biblio/1497795

Rudolph, M., Carr, S.M., Subramania, G.S., Ten Eyck, G.A., Dominguez, J., Pluym, T., Lilly, M., Carroll, M.S., Bussmann, E., & Bussmann, E. (2014). Probing limits of STM field emission patterned Si:P $\delta$-doped devices. Applied Physics Letters, 105(16). 10.1063/1.4899255

Rudolph, M., Carr, S.M., Subramania, G.S., Ten Eyck, G.A., Dominguez, J., Lilly, M., Carroll, M.S., Bussmann, E., & Bussmann, E. (2014). Measurement of mesoscopic Si:P delta-doped devices fabricated by rapid STM hydrogen desorption lithography [Conference]. https://www.osti.gov/biblio/1141034

Brener, I., Fofang, N., Liu, S., Luk, T.S., Dominguez, J., & Dominguez, J. (2014). Controllable emission of quantum dots coupled to magneto-electric Mie-type resonances of subwavelength all-dielectric nanoantennas [Conference]. https://www.osti.gov/biblio/1140347

Brener, I., Fofang, N., Liu, S., Luk, T.S., Gonzalez, E., Dominguez, J., & Dominguez, J. (2014). Shaping Emission Spectra of Quantum Dots by All-dielectric Metasurfaces of Silicon-Nanodisks for Resonant Directional Scattering and Light Extraction [Conference]. https://www.osti.gov/biblio/1140628

Nguyen, K., Lu, T.M., Muller, R.P., Carroll, M.S., Lilly, M., Nielsen, E., Bishop, N.C., Young, R.W., Wendt, J.R., Dominguez, J., Pluym, T., Stevens, J., & Stevens, J. (2013). Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot. Nano Letters, 13(12), pp. 5785-5790. https://doi.org/10.1021/nl4020759

Jacobson, N.T., Nguyen, K., Lilly, M., Bishop, N.C., Nielsen, E., Wendt, J.R., Dominguez, J., Pluym, T., Carroll, M.S., & Carroll, M.S. (2013). Spontaneous emission spectrum of a diabatically pulsed silicon charge qubit. Nature Physics. https://www.osti.gov/biblio/1143830

Lilly, M., Wendt, J.R., Pluym, T., Stevens, J., Ten Eyck, G.A., Dominguez, J., Young, R.W., Nielsen, E., Muller, R.P., Carroll, M.S., Lu, T.M., Tracy, L.A., Nguyen, K., Luhman, D.R., Bishop, N.C., Singh, M., Bielejec, E.S., Garratt, E.J., & Garratt, E.J. (2013). Manipulating single electrons in semiconductor devices for quantum computing [Conference]. https://www.osti.gov/biblio/1113349

Nguyen, K., Stevens, J.E., Grubbs, R.K., Pluym, T., Dominguez, J., Young, R.W., Muller, R.P., Nielsen, E., Jacobson, N.T., Lilly, M., Carroll, M.S., Bishop, N.C., Tracy, L.A., Carr, S.M., Lu, T.M., Wendt, J.R., & Wendt, J.R. (2013). Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot [Presentation]. https://www.osti.gov/biblio/1659007

Brener, I., Fofang, N., Liu, S., Luk, T.S., Gonzalez, E., Dominguez, J., & Dominguez, J. (2013). Unidirectional Scattering by Tailoring Magnetic and Electric Resonances in All-Dielectric Nanoantennas [Conference]. https://www.osti.gov/biblio/1073242

Nguyen, K., Carroll, M.S., Lilly, M., Bishop, N.C., Nielsen, E., Wendt, J.R., Dominguez, J., Pluym, T., Stevens, J., Ten Eyck, G.A., & Ten Eyck, G.A. (2013). Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot [Conference]. https://www.osti.gov/biblio/1145299

Lu, T.M., Bishop, N.C., Tracy, L.A., Blume-Kohout, R., Pluym, T., Wendt, J.R., Dominguez, J., Lilly, M., Carroll, M.S., & Carroll, M.S. (2013). Measurements of spin lifetime of an antimony-bound electron in silicon [Conference]. https://www.osti.gov/biblio/1145318

Liu, S., Dominguez, J., Bower, J.E., Sinclair, M.B., Ihlefeld, J.F., Burckel, D.B., Brener, I., & Brener, I. (2013). Realization of Tellurium-based all Dielectric Optical Metamaterials using a Multi-cycle Deposition-etch Process [Conference]. https://www.osti.gov/biblio/1116050

Liu, S., Dominguez, J., Bower, J.E., Sinclair, M.B., Ihlefeld, J.F., Burckel, D.B., Brener, I., & Brener, I. (2013). Realization of tellurium-based all dielectric optical metamaterials using a multi-cycle deposition-etch process. Applied Physics Letters, 102(16). https://doi.org/10.1063/1.4803019

Lu, T.M., Cederberg, J.G., Lilly, M., Carroll, M.S., Bishop, N.C., Tracy, L.A., Blume-Kohout, R., Pluym, T., Wendt, J.R., Dominguez, J., Means, J., Kotula, P.G., & Kotula, P.G. (2013). Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime [Conference]. https://www.osti.gov/biblio/1072630

Lu, T.M., Cederberg, J.G., Lilly, M., Carroll, M.S., Bishop, N.C., Tracy, L.A., Blume-Kohout, R., Pluym, T., Wendt, J.R., Dominguez, J., Means, J., Kotula, P.G., & Kotula, P.G. (2012). Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime [Conference]. https://www.osti.gov/biblio/1294504

Lu, T.M., Cederberg, J.G., Lilly, M., Carroll, M.S., Bishop, N.C., Tracy, L.A., Blume-Kohout, R., Pluym, T., Wendt, J.R., Dominguez, J., Means, J., Kotula, P.G., & Kotula, P.G. (2012). Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime [Conference]. https://www.osti.gov/biblio/1072564

Lu, T.M., Bishop, N.C., Tracy, L.A., Blume-Kohout, R., Pluym, T., Wendt, J.R., Dominguez, J., Lilly, M., Carroll, M.S., & Carroll, M.S. (2012). Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon [Conference]. https://www.osti.gov/biblio/1072652

Nguyen, K., Young, R.W., Nielsen, E., Rahman, R., Muller, R.P., Carroll, M.S., Lilly, M., Bishop, N.C., Tracy, L.A., Wendt, J.R., Grubbs, R.K., Pluym, T., Stevens, J., Dominguez, J., & Dominguez, J. (2012). Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias [Conference]. https://www.osti.gov/biblio/1061180

Nguyen, K., Stevens, J., Grubbs, R.K., Pluym, T., Dominguez, J., Muller, R.P., Carroll, M.S., Jacobson, N.T., Witzel, W.M., Bishop, N.C., Tracy, L.A., Carr, S.M., Lu, T.M., Wendt, J.R., & Wendt, J.R. (2012). Pulsed electron transition measurements in a silicon double quantum dot [Conference]. https://www.osti.gov/biblio/1294362

Carroll, M.S., Ten Eyck, G.A., Carr, S.M., Witzel, W.M., Dominguez, J., Rahman, R., Nielsen, E., Lu, T.M., Lilly, M., Jacobson, N.T., & Jacobson, N.T. (2012). STM fabrication of double quantum dot charge qubits for adiabatic quantum computing [Conference]. https://www.osti.gov/biblio/1073413

Bishop, N.C., Silva, B.L., Pluym, T., Muller, R.P., Lilly, M., Carroll, M.S., Nguyen, K., Carr, S.M., Wendt, J.R., Nielsen, E., Young, R.W., Tracy, L.A., Ten Eyck, G.A., Dominguez, J., & Dominguez, J. (2012). Electrometer sensitivity for spin readout [Presentation]. https://www.osti.gov/biblio/1650268

Lilly, M., Nielsen, E., Muller, R.P., Carroll, M.S., Nguyen, K., Bishop, N.C., Wendt, J.R., Grubbs, R.K., Pluym, T., Stevens, J., Dominguez, J., Young, R.W., & Young, R.W. (2012). Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias [Conference]. https://www.osti.gov/biblio/1062789

Lu, T.M., Carroll, M.S., Bishop, N.C., Pluym, T., Means, J., Kotula, P.G., Cederberg, J.G., Tracy, L.A., Dominguez, J., Lilly, M., & Lilly, M. (2011). Enhancement-mode buried strained-silicon channel quantum dot with tunable lateral geometry [Conference]. https://www.osti.gov/biblio/1120248

Grubbs, R.K., Pluym, T., Dominguez, J., Young, R.W., Muller, R.P., Nielsen, E., Bishop, N.C., Carroll, M.S., Lilly, M., Tracy, L.A., Nguyen, K., Carr, S.M., Lu, T.M., Wendt, J.R., Stevens, J., & Stevens, J. (2011). Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots [Conference]. https://www.osti.gov/biblio/1143428

Lilly, M., Young, R.W., Muller, R.P., Nielsen, E., Carroll, M.S., Bishop, N.C., Tracy, L.A., Wendt, J.R., Stevens, J., Grubbs, R.K., Pluym, T., Dominguez, J., & Dominguez, J. (2011). Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots [Conference]. https://www.osti.gov/biblio/1106432

Lu, T.M., Carroll, M.S., Bishop, N.C., Pluym, T., Means, J., Kotula, P.G., Cederberg, J.G., Tracy, L.A., Dominguez, J., Lilly, M., & Lilly, M. (2011). Enhancement-mode buried strained-silicon channel double quantum dot [Conference]. https://www.osti.gov/biblio/1288662

75 Results
75 Results