Publications

Abstract not provided.

Abstract not provided.

Abstract not provided.

We present the results of a one year LDRD program that has focused on evaluating the use of newly developed deep ultraviolet LEDs in water purification. We describe our development efforts that have produced an LED-based water exposure set-up and enumerate the advances that have been made in deep UV LED performance throughout the project. The results of E. coli inactivation with 270-295 nm LEDs are presented along with an assessment of the potential for applying deep ultraviolet LED-based water purification to mobile point-of-use applications as well as to rural and international environments where the benefits of photovoltaic-powered systems can be realized.

Time domain reflectometry (TDR) operates by propagating a radar frequency electromagnetic pulse down a transmission line while monitoring the reflected signal. As the electromagnetic pulse propagates along the transmission line, it is subject to impedance by the dielectric properties of the media along the transmission line (e.g., air, water, sediment), reflection at dielectric discontinuities (e.g., air-water or water-sediment interface), and attenuation by electrically conductive materials (e.g., salts, clays). Taken together, these characteristics provide a basis for integrated stream monitoring; specifically, concurrent measurement of stream stage, channel profile and aqueous conductivity. Here, we make novel application of TDR within the context of stream monitoring. Efforts toward this goal followed three critical phases. First, a means of extracting the desired stream parameters from measured TDR traces was required. Analysis was complicated by the fact that interface location and aqueous conductivity vary concurrently and multiple interfaces may be present at any time. For this reason a physically based multisection model employing the S11 scatter function and Cole-Cole parameters for dielectric dispersion and loss was developed to analyze acquired TDR traces. Second, we explored the capability of this multisection modeling approach for interpreting TDR data acquired from complex environments, such as encountered in stream monitoring. A series of laboratory tank experiments were performed in which the depth of water, depth of sediment, and conductivity were varied systematically. Comparisons between modeled and independently measured data indicate that TDR measurements can be made with an accuracy of {+-}3.4x10{sup -3} m for sensing the location of an air/water or water/sediment interface and {+-}7.4% of actual for the aqueous conductivity. Third, monitoring stations were sited on the Rio Grande and Paria rivers to evaluate performance of the TDR system under normal field conditions. At the Rio Grande site (near Central Bridge in Albuquerque, New Mexico) continuous monitoring of stream stage and aqueous conductivity was performed for 6 months. Additionally, channel profile measurements were acquired at 7 locations across the river. At the Paria site (near Lee's Ferry, Arizona) stream stage and aqueous conductivity data were collected over a 4-month period. Comparisons drawn between our TDR measurements and USGS gage data indicate that the stream stage is accurate within {+-}0.88 cm, conductivity is accurate within {+-}11% of actual, and channel profile measurements agree within {+-}1.2 cm.

Abstract not provided.

Abstract not provided.

Abstract not provided.

The quality of low-cost multicrystalline silicon (mc-Si) has improved to the point that it forms approximately 50% of the worldwide photovoltaic (PV) power production. The performance of commercial mc-Si solar cells still lags behind c-Si due in part to the inability to texture it effectively and inexpensively. Surface texturing of mc-Si has been an active field of research. Several techniques including anodic etching [1], wet acidic etching [2], lithographic patterning [3], and mechanical texturing [4] have been investigated with varying degrees of success. To date, a cost-effective technique has not emerged.

The Sandia Photovoltaic Program conducted research in crystalline-silicon solar cells between 1986 and 2000 for the U.S. Department of Energy. This period saw rapid improvements in the fundamental understanding of c-Si materials and devices, improvements in c-Si PV manufacturing and control, and a rapid expansion of c-Si PV manufacturing capacity. Crystalline-silicon technology has provided the basis for PV to emerge as a serious option for global energy needs. The c-Si cell research at Sandia examined c-Si materials, devices, processing, and process integration. This report summarizes research conducted in this program over the past 15 years.

The authors have developed novel metal-assisted texturing processes that have led to optically favorable surfaces for solar cells. Large area ({approximately} 200 cm{sup 2}) uniform texturing has been achieved. The physical dimensions of the chamber limited texturing of even larger wafers. Surface contamination and residual RIE-induced damage were removed by incorporation of a complete RCA clean process followed by wet-chemical etching treatments. RIE-textured solar cells with optimized profiles providing performance comparable to the random, wet-chemically etched cells have been demonstrated. A majority of the texture profiles exhibit an enhanced IQE response in the near IR region.using scanning electron microscope measurements, they carried out a detailed analysis of the microstructure of random RIE-textured surfaces. The random microstructure represents a superposition of sub-{micro}m grating structures with a wide distribution of periods, depths, and profiles as determined by the SEM measurements. These structures were modeled using GSOLVER{trademark} software for periodic patterns. The enhanced IR response from random, RIE-textured surfaces is attributed to enhanced coupling of light into the transmitted diffraction orders. These obliquely propagating diffraction orders generate electron-hole pairs closer to the surface, thus, reducing bulk recombination losses relative to a non-scattering, planar surface with identical hemispherical reflection. The optimized texture and damage removal processes have been applied to large area (100--132 cm{sup 2}) multi-crystalline wafers. initial results have demonstrated improved performance relative to planar, control wafers. However, the texture and solar cell fabrication processes require further optimization in the RCA clean, DRE treatments, and emitter formation in order to fully realize the benefits of the low-reflection ({approximately}1-2%) textured surfaces.

The overall objectives of this program are to (1) develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

Abstract not provided.

Abstract not provided.

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

In this paper, the authors examined the areas in c-Si growth, materials, and processing that require improvement through research to overcome barriers to the implementation of the photovoltaic road maps's Si goals. To obtain PV module throughput to the roadmap target of 200 MW/factory/year, the typical Si PV factory must produce >4,000 m{sup 2}/day of silicon.

Hemispherical reflectance and internal quantum efficiency measurements have been employed to evaluate the response of Si nanostructured surfaces formed by using random and periodic reactive ion etching techniques. Random RIE-textured surfaces have demonstrated solar weighted reflectance of {approx} 3% over 300--1,200-nm spectral range even without the benefit of anti-reflection films. Random RIE-texturing has been found to be applicable over large areas ({approximately} 180 cm{sup 2}) of both single and multicrystalline Si surfaces. Due to the surface contamination and plasma-induced damage, RIE-textured surfaces did not initially provide increased short circuit current as expected from the enhanced absorption. Improved processing combined with wet-chemical damage removal etches resulted in significant improvement in the short circuit current with IQEs comparable to the random, wet-chemically textured surfaces. An interesting feature of the RIE-textured surfaces was their superior performance in the near IR spectral range. The response of RIE-textured periodic surfaces can be broadly classified into three distinct regimes. One-dimensional grating structures with triangular profiles are characterized by exceptionally low, polarization-independent reflective behavior. The reflectance response of such surfaces is similar to a graded-index anti-reflection film. The IQE response from these surfaces is severely degraded in the UV-Visible spectral region due to plasma-induced surface damage. One-dimensional grating structures with rectangular profiles exhibit spectrally selective absorptive behavior with somewhat similar IQE response. The third type of grating structure combines broadband anti-reflection behavior with significant IQE enhancement in 800--1,200-nm spectral region. The hemispherical reflectance of these 2D grating structures is comparable to random RIE-textured surfaces. The IQE enhancement in the long wavelength spectral region can be attributed to increased coupling into obliquely propagating transmitted diffracted orders inside the Si substrate. Random RIE texturing techniques are expected to find widespread commercial applicability in low-cost, large-area multicrystalline Si solar cells. Grating-texturing techniques are expected to find applications in thin-film and space solar cells.

A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before, and 3.9 % after SiN deposition. A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma-damage removal treatments are tested to optimize low lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mc-Si. Increased Jsc due to the RIE texture proved superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique, especially applicable on lower lifetime (multicrystalline) silicon. The use of non-toxic, non-corrosive SF6 makes this process attractive for mass production.

Sub-wavelength periodic texturing (gratings) of crystalline-silicon (c-Si) surfaces for solar cell applications can be designed for maximizing optical absorption in thin c-Si films. We have investigated c-Si grating structures using rigorous modeling, hemispherical reflectance, and internal quantum efficiency measurements. Model calculations predict almost ∼ 100 % energy coupling into obliquely propagating diffraction orders. By fabrication and optical characterization of a wide range of ID & 2D c-Si grating structures, we have achieved broadband, low (∼ 5 %) reflectance without an anti-reflection film. By integrating grating structures into conventional solar cell designs, we have demonstrated short-circuit current density enhancements of 3.4 and 4.1 mA/cm2 for rectangular and triangular 1D grating structures compared to planar controls. The effective path length enhancements due to these gratings were 2.2 and 1.7, respectively. Optimized 2D gratings are expected to have even better performance.

In October 1996, an interdisciplinary team began a three-year LDRD project to study the plasma processes of reactive ion etching and plasma-enhanced chemical vapor deposition on large-area silicon devices. The goal was to develop numerical models that could be used in a variety of applications for surface cleaning, selective etching, and thin-film deposition. Silicon solar cells were chosen as the experimental vehicle for this project because an innovative device design was identified that would benefit from immediate performance improvement using a combination of plasma etching and deposition processes. This report presents a summary of the technical accomplishments and conclusions of the team.

Surface texture promotes enhanced light absorption in Si solar cells. The quality of lower cost multicrystalline-silicon (mc-Si) has increased to the point that its cell performance is close to that of single c-Si cells, with the major difference resulting from the inability to texture mc-Si affordably. This has reduced the cost-per-watt advantage of mc-Si. Surface texturing aimed at enhanced absorption in Si has been historically obtained by creating multimicrometer-sized pyramids using anisotropic wet etchants on single-crystalline silicon that take advantage of its single crystalline orientation. Since the surface feature sizes are several times the length of the incident solar wavelengths involved, the optical analysis of the reflected and absorbed light can be understood using geometrical optics. Geometrical textures reduce reflection and improve absorption by double-bounce and oblique light coupling into the semiconductor. However, geometrical texturing suffers from several disadvantages that limit its effectiveness. Some of these are listed below: (a) Wet-chemical anisotropic etching used to form random pyramids on <100> crystal orientation is not effective in the texturing of low-cost multicrystalline wafers, (b) Anti-reflection films deposited on random features to reduce reflection have a resonant structure limiting their effectiveness to a narrow range of angles and wavelengths. Various forms of surface texturing have been applied to mc-Si in research, including laser-structuring, mechanical grinding, porous-Si etching, and photolithographically defined etching. However, these may be too costly to ever be used in large-scale production. A Japanese firm has reported the development of an RIE process using Cl{sub 2} gas, which textures multiple wafers per batch, making it attractive for mass-production [1]. Using this process, they have produced a 17.1% efficient 225-cm{sup 2} mc-Si cell, which is the highest efficiency mc-Si cell of its size ever reported. This proves that RIE texturing does not cause performance-limiting damage to Si cells. In this paper, we will discuss an RIE texturing process that avoids the use of toxic and corrosive Cl{sub 2} gas.

Sandia National Laboratories has demonstrated significant performance gains in crystalline silicon solar cell technology through the use of plasma-processing for the deposition of silicon nitride by Plasma Enhanced Chemical Vapor Deposition (PECVD), plasma-hydrogenation of the nitride layer, and reactive-ion etching of the silicon surface prior to the deposition to decrease the reflectivity of the surface. One of the major problems of implementing plasma processing into a cell production line is the batch configuration and/or low throughput of the systems currently available. This report describes the concept of a new in-line plasma processing system that could meet the industrial requirements for a high-throughput and cost effective solution for mass production of solar cells.

The performance of a solar cell is critically dependent on absorption of incident photons and their conversion into electrical current. This report describes research efforts that have been directed toward the use of nanoscale surface texturing techniques to enhance light absorption in Si. This effort has been divided into two approaches. The first is to use plasma-etching to produce random texturization on multicrystalline Si cells for terrestrial use, since multicrystalline Si cannot be economically textured in any other way. The second approach is to use interference lithography and plasma-etching to produce gettering structures on Si cells for use in space, so that long-wavelength light can be absorbed close to the junction and make the cells more resistant to cosmic radiation damage.

Abstract not provided.

Abstract not provided.

The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. The authors used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. They also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion.

A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO{sub 2} (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 cm/s at the 1.3 {Omega}-cm p-type (100) silicon surface. Such low S is achieved by the stack even when the RTO and SiN films individually yield considerably poorer surface passivation. Critical to achieving low S by the stack is the use of a short, moderate temperature anneal (in this study 730 C for 30 seconds) after film growth and deposition. This anneal is believed to enhance the release and delivery of atomic hydrogen from the SiN film to the Si-SiO{sub 2} interface, thereby reducing the density of interface traps at the surface. Compatibility with this post-deposition anneal makes the stack passivation scheme attractive for cost-effective solar cell production since a similar anneal is required to fire screen-printed contacts. Application of the stack to passivated rear screen-printed solar cells has resulted in V{sub oc}`s of 641 mV and 633 mV on 0.65 {Omega}-cm and 1.3 {Omega}-cm FZ Si substrates, respectively. These V{sub oc} values are roughly 20 mV higher than for cells with untreated, highly recombinative back surfaces. The stack passivation has also been used to form fully screen-printed bifacial solar cells which exhibit rear-illuminated efficiency as high as 11.6% with a single layer AR coating.

The Photovoltaic Manufacturing Technology Project (PVMaT) is a government/industry research and development (R and D) partnership between the US federal government (through the US Department of Energy [DOE]) and members of the US PV industry. The goals of PVMaT are to help the US PV industry improve module manufacturing processes and equipment; accelerate manufacturing cost reductions for PV modules, balance-of-systems components, and integrated systems; increase commercial product performance and reliability; and enhance the investment opportunities for substantial scale-ups of US-based PV manufacturing plant capacities. The approach for PVMaT has been to cost-share risk taking by industry as it explores new manufacturing options and ideas for improved PV modules and other components, advances system and product integration, and develops new system designs, all of which will lead to overall reduced system life-cycle costs for reliable PV end products. The PVMaT Phase 4A module manufacturing R and D projects are just being completed and initial results for the work directed primarily to module manufacture are reported in this paper. Fourteen new Phase 5A subcontracts have also just been awarded and planned R and D areas for the ten focused on module manufacture are described. Finally, government funding, subcontractor cost sharing, and a comparison of the relative efforts by PV technology throughout the PVMaT project are presented.

The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignment to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. They used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. They also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion.

We developed a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard, commercial, screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. We succeeded in finding a set of parameters which resulted in good emitter uniformity and improved cell performance. We used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed, multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. Our initial results found a statistically significant improvement of half an absolute percentage point in cell efficiency when the self-aligned emitter etchback was combined with a 3-step PECVD-nitride surface passivation and hydrogenation treatment.

A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an in-situ passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n{sup +} and p{sup +} profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin ({approximately} 60 {angstrom}) diffusion glass, resulting in low J{sub o} values below 100 fA/cm{sup 2} for transparent ({approximately} 100 {Omega}/{open_square}) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step.

We studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on multicrystalline-silicon (mc-Si) cells from Solarex. We conducted an investigation of plasma deposition and etching processes on full-size mc-Si cells processed in commercial production lines, so that any improvements obtained would be immediately relevant to the PV industry. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen-printed gridlines as etch masks to form self-aligned, selectively doped emitter profiles. This process results in reduced gridline contact resistance when followed by plasma-enhanced chemical vapor deposition (PECVD) treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier doping beneath the gridlines for even lower contact resistance, reduced contact recombination, and better bulk defect gettering. Our initial results found a statistically significant improvement of about half an absolute percentage point in cell efficiency when the self-aligned emitter etchback was combined with a PECVD-nitride surface passivation treatment. Some additional improvement in bulk diffusion length was observed when a hydrogen passivation treatment was used in the process. We attempted to gain additional benefits from using an extra-heavy phosphorus emitter diffusion before the gridlines were deposited. However, this required a higher plasma-etch power to etch back the deeper diffusion and keep the etch time reasonably short. The higher power etch may have damaged the surface and the gridlines so that improvement due to surface passivation and reduced gridline contact resistance was inhibited.

Silicon solar cell efficiencies of 17.1%, 16.4%, 14.8%, and 14.9% have been achieved on FZ, Cz, multicrystalline (mc-Si), and dendritic web (DW) silicon, respectively, using simplified, cost-effective rapid thermal processing (RTP). These represent the highest reported efficiencies for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. Appropriate diffusion temperature coupled with the added in-situ anneal resulted in suitable minority-carrier lifetime and diffusion profiles for high-efficiency cells. The cooling rate associated with the in-situ anneal can improve the lifetime and lower the reverse saturation current density (Jo), however, this effect is material and base resistivity specific. PECVD antireflection (AR) coatings provided low reflectance and efficient front surface and bulk defect passivation. Conventional cells fabricated on FZ silicon by furnace diffusions and oxidations gave an efficiency of 18.8% due to greater short wavelength response and lower Jo.

We have investigated whether an in-situ hydrogen or ammonia rf-plasma treatment prior to a PECVD-nitride deposition would promote bulk defect passivation independently of surface effects. We also studied whether the predeposition of a thin silicon-nitride protective layer vbefore performing the plasma treatment would serve to minimize surface damage. We found that for the limited set of deposition conditions in of cells processed using the used five different deposition strategies and compared the resulting cell performance with that investigated so far, the direct deposition of PECVD-nitride produces the best cells on String Ribbon silicon wafers to date, with efficiencies up to 14.5%. Hydrogen and ammonia plasma pretreatments without a protective nitride layer resulted in better bulk passivation, but damaged surfaces. Pretreatments after deposition of the protective layer produced the best surface passivation, but were not effective in passivating the bulk.

This is a second annual report since the University Center of Excellence for Photovoltaics Research and Education was established at Georgia Tech. The major focus of the center is crystalline silicon, and the mission of the Center is to improve the fundamental understanding of the science and technology of advanced photovoltaic devices and materials, to fabricate high-efficiency cells, and develop low-cost processes, to provide training and enrich the equational experience of students in this field, and to increase US competitiveness by providing guidelines to industry and DOE to achieve cost-effective and high-efficiency photovoltaic devices. This report outlines the work of the Center from July 1993--June 1994.

The Photovoltaic Manufacturing Technology (PVMaT) Project was initiated in 1990 to help the US photovoltaic (PV) industry extend its world leadership role in manufacturing and commercially developing PV modules and systems. It is being conducted in several phases, staggered to support industry progress. The four most recently awarded subcontracts (Phase 2B) are now completing their first year of research. They include two subcontracts on CdTe, one on Spheral Solar[trademark] Cells, and one on cast polysilicon. These subcontracts represent new technology additions to the PVMaT Project. Subcontracts initiated in earlier phases are nearing completion, and their progress is summarized. An additional phase of PVMaT, Phase 4A, is being initiated which will emphasize product-driven manufacturing research and development. The intention of Phase 4A is to emphasize improvement and cost reduction in the manufacture of full-system PV products. The work areas may include, but are not limited to, issues such as improvement of module manufacturing processes; system and system component packaging, integration, manufacturing, and assembly; product manufacturing flexibility; and balance-of-system development with the goal of product manufacturing improvements.

A limited pilot production run on PESC silicon solar cells for use at high concentrations (200 to 400 suns) is summarized. The front contact design of the cells was modified for operation without prismatic covers. The original objective of the contract was to systematically complete a process consolidation phase, in which all the, process improvements developed during the contract would be combined in a pilot production run. This pilot run was going to provide, a basis for estimating cell costs when produced at high throughput. Because of DOE funding limitations, the Photovoltaic Concentrator Initiative is on hold, and Applied Solar`s contract was operated at a low level of effort for most of 1993. The results obtained from the reduced scope pilot run showed the effects of discontinuous process optimization and characterization. However, the run provided valuable insight into the technical areas that can be optimized to achieve the original goals of the contract.

This document serves as the proceedings for the annual project review meeting held by Sandia's Photovoltaic Cell Research Division and Photovoltaic Technology Division. It contains information supplied by each organization making a presentation at the meeting, which was held August 7 through 9, 1990 at the Sheraton Hotel in Albuquerque, New Mexico. Sessions were held to discuss national photovoltaic programs, one-sun crystalline silicon cell research, concentrator silicon cell research, concentrator 3-5 cell research, and concentrating collector development.