Denis Mamaluy

Cognitive & Emerging Computing

Author profile picture

Cognitive & Emerging Computing

dnmamal@sandia.gov

My older (pre-2013) publications and CV

(505) 844-2054

Sandia National Laboratories, New Mexico
 P.O. Box 5800
 Albuquerque, NM 87185-1322

Biography

The CMOS technology is famously approaching its scaling limit: within the next decade or so, nano-scale FET transistors will reach the sub 5-nm feature size, at which point any further reduction of their sizes will likely become impractical and even impossible due to the thermal fluctuation noise. There are beyond-CMOS and non-charge based alternatives, some of which may be scaled below the 5-nm size and possibly down to atomic sizes. In any case, at this point the foreseeable human scientific and technological capabilities will reach the ultimate scaling limit for the elementary logic and memory device size.


In my research I am trying to answer the following questions:

  • What are the corresponding limits of computation?
  • How much computing can we actually perform and how much information we can actually store with 1 kg of non-exotic matter (i.e. far, far below Bekenstein bound)?
  • Which device-architecture paradigms can allow us to continue increasing FLOPS/kg ratio after the CMOS scaling limit is reached?
  • Can this increase still follow the exponential ("new Moore’s law") trend?

If you like to discuss these and other (e.g. digital physics) fascinating subjects or have an idea about a potential CMOS replacement ­and would like to test it via computer simulation – please give me a call or send me an email.

Education

  • B. Verkin Institute for Low Temperature Physics & Engineering,
  • Ph.D. in Physics and Mathematics, Kharkov, Ukraine, November 2000.
  • Kharkov State University, Physics Department, division of theoretical physics,
  • M.S. in Physics (with honors), Kharkov, Ukraine, June 1997.
  • UNESCO at Kharkov University,
  • M.A. in Philosophy of Communications and Management, Kharkov, Ukraine, May 1997.

Appointments

  • 2012-pres.: Senior R&D scientist and engineer, Sandia National Laboratories
  • 2006-2011: Research professor, ECEE, ASU
  • 2005-2006: Faculty research associate, ECEE, ASU
  • 2002-2005: Research associate, Department of Electrical Engineering, ASU
  • 2000-2002: Post-doctorate fellow, Walter Schottky Institute, Technische Universität München, Munich, Germany

Publications

Juan Pedro Mendez Granado, Denis Mamaluy, (2022). Strong Quantization of Current-carrying Electron States in delta-layer Systems Solid-State Electronics Document ID: 1677554

Denis Mamaluy, (2022). Prediction of two conductivity regimes in δ-layer tunnel junctions Workshop on Innovative NanoDevices and Systems (WINDS) Document ID: 1677420

Denis Mamaluy, Juan Pedro Mendez Granado, (2022). Revealing conductivity of p-type delta layer systems for novel computing applications https://www.osti.gov/search/identifier:1887942 Document ID: 1629679

Juan Pedro Mendez Granado, Denis Mamaluy, (2022). Conductivity and size quantization effects in semiconductor delta-layer systems Scientific Reports Document ID: 1629648

Juan Pedro Mendez Granado, Denis Mamaluy, (2022). Revealing the quantum effects of imperfections on the tunneling rate in delta-layer junctions Workshop on Innovative Nanoscale Devices and Systems (WINDS) 2022 Document ID: 1618264

Denis Mamaluy, Juan Pedro Mendez Granado, (2022). Strong Quantization of Current-carrying Electron States in δ-layer Systems Sispad-2022 Document ID: 1562634

James Owen, Ehud Fuchs, Robin Santini, John Randall, Juan Pedro Mendez Granado, Xujiao Gao, Denis Mamaluy, Shashank Misra, (2022). Atomic Precision Advanced Manufacturing for Ultraprecise 2D Bipolar Devices Eipbn Document ID: 1551569

Denis Mamaluy, Juan Pedro Mendez Granado, (2022). Quantum Transport Simulations for Si: P δ-layer systems Ses2022 Document ID: 1528668

Andrew Lohn, Denis Mamaluy, Matthew Marinella, (2022). Control of radial conductivity profiles in nanoscale conducting filaments of resistive switches Nature Nanotechnology Document ID: 132707

Patrick R. Mickel, Andrew Lohn, Denis Mamaluy, Matthew Marinella, (2022). Control of radial conductivity profiles in nanoscale conducting filaments of resistive switches Nature Nanotechnology Document ID: 142949

David Russell Hughart, Xujiao Gao, Denis Mamaluy, Matthew Marinella, Patrick R. Mickel, (2022). Power signatures of electric field and thermal switching regimes in memristive SET transitions Applied PHysics Letters https://www.osti.gov/search/identifier:1871986 Document ID: 307815

Juan Pedro Mendez Granado, Denis Mamaluy, (2022). Strong quantization of current-carrying electron states in delta-layer systems Sispad 2022 Document ID: 1505311

Juan Pedro Mendez Granado, Denis Mamaluy, (2022). Disorders in delta-layer tunnel junctions Sispad Document ID: 1505017

J.H.G Owen, R. Santini, E. Fuchs, J.N. Randall, Juan Pedro Mendez Granado, Xujiao Gao, Denis Mamaluy, Shashank Misra, (2022). Atomic Precision Advanced Manufacturing for Ultraprecise 2D Bipolar Devices Eipbn Document ID: 1449071

Christopher Richard Allemang, Evan Mark Anderson, Andrew David Baczewski, Ezra Bussmann, Robert Butera, DeAnna Marie Campbell, Quinn Campbell, Stephen M Carr, Esther Frederick, Phillip Gamache, Xujiao Gao, Albert Dario Grine, Mathew Mark Gunter, Connor Halsey, Jeffrey Andrew Ivie, Aaron Michael Katzenmeyer, Andrew Jay Leenheer, William Lepkowski, Tzu-Ming Lu, Denis Mamaluy, Juan Pedro Mendez Granado, Luis Fabian Pena, Scott William Schmucker, David Scrymgeour, Lisa A Tracy, George T. Wang, Dan Ward, Steve Michael Young, (2021). FAIR DEAL Grand Challenge Overview https://www.osti.gov/search/identifier:1854733 Document ID: 1367975

Juan Pedro Mendez Granado, Xujiao Gao, Denis Mamaluy, Shashank Misra, (2021). Quantum Transport Simulations for Si: P delta-layer Tunnel Junctions International Conference on Simulation of Semiconductor Processes and Devices https://www.osti.gov/search/identifier:1867276 Document ID: 1368209

Juan Pedro Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Quantum Transport Simulations for Si:P delta-layer Tunnel Junctions International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021) https://www.osti.gov/search/identifier:1867271 Document ID: 1332319

Juan Pedro Mendez Granado, Denis Mamaluy, (2021). Quantum Effects of Unintentional Dopants in delta-layer Tunnel Junctions Advanced Nano Materials ( https://www.osti.gov/search/identifier:1867275 Document ID: 1332395

Denis Mamaluy, Juan Pedro Mendez Granado, Xujiao Gao, Shashank Misra, (2021). Revealing Quantum Effects in Highly Conductive Delta-layer Systems Communications Physics https://www.osti.gov/search/identifier:1828022 Document ID: 1330989

J. H. G Owen, R. Santini, E. Fuchs, J. N. Randall, Juan Pedro Mendez Granado, Xujiao Gao, Denis Mamaluy, Shashank Misra, (2021). Towards Ultraprecise Bipolar 2D devices using Atomic Precision Advanced Manufacturing AVS Symposium Document ID: 1317612

Juan Pedro Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Conductive Properties of Tunnel Junctions in Semiconductor delta-layer Systems International Workshop on Computational Nanotechnology (IWCN 2021) https://www.osti.gov/search/identifier:1867274 Document ID: 1307010

Juan Pedro Mendez Granado, Denis Mamaluy, (2021). Quantum Effects of Unintentional Dopants in δ-layer Tunnel Junctions Advanced Nano Materials and associated conferences (ANM2021) Document ID: 1306656

Juan Pedro Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Quantum Transport Framework for Highly Conductive delta-layer Systems The International Workshop on Computational Nanotechnology (IWCN 2021) https://www.osti.gov/search/identifier:1866559 Document ID: 1305678

Denis Mamaluy, Juan P. Mendez, Xujiao Gao, Shashank Misra, (2021). Quantum Transport Simulations for Si: P δ-layer Tunnel Junctions Sispad Document ID: 1294935

Denis Mamaluy, Juan Pedro Mendez Granado, Xujiao Gao, Shashank Misra, (2021). Conductive Properties of Tunnel Junctions in Semiconductor delta-layer Systems International Workshop on Computational Nanotechnology 2021 Document ID: 1268239

Juan Pedro Mendez Granado, Denis Mamaluy, Xujiao Gao, Shashank Misra, (2021). Quantum Transport Framework for Highly Conductive delta-layer Systems International Workshop on Computational Nanotechnology 2021 Document ID: 1267372

Juan Pedro Mendez Granado, Denis Mamaluy, Xujiao Gao, Evan Mark Anderson, DeAnna Marie Campbell, Jeffrey Andrew Ivie, Tzu-Ming Lu, Scott William Schmucker, Shashank Misra, (2020). Quantum transport in Si:P δ-layer wires International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2020) https://www.osti.gov/search/identifier:1820274 Document ID: 1196146

Xujiao Gao, Lisa A Tracy, Evan Mark Anderson, DeAnna Marie Campbell, Jeffrey Andrew Ivie, Tzu-Ming Lu, Denis Mamaluy, Scott William Schmucker, Shashank Misra, (2020). Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2020 https://www.osti.gov/search/identifier:1819257 Document ID: 1196000

Xujiao Gao, Lisa A Tracy, Evan Mark Anderson, DeAnna Marie Campbell, Jeffrey Andrew Ivie, Tzu-Ming Lu, Denis Mamaluy, Scott William Schmucker, Shashank Misra, (2020). Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices International Conference on Simulation Processes and Devices https://www.osti.gov/search/identifier:1818017 Document ID: 1184666

Juan Pedro Mendez Granado, Denis Mamaluy, Xujiao Gao, Evan Mark Anderson, DeAnna Marie Campbell, Jeffrey Andrew Ivie, Tzu-Ming Lu, Scott William Schmucker, Shashank Misra, (2020). Quantum Transport in Si:P delta-Layer Wires Sispad 2020 https://www.osti.gov/search/identifier:1818002 Document ID: 1184762

Xujiao Gao, Denis Mamaluy, William Lepkowski, Steve Michael Young, (2020). FAIR DEAL GC Thrust 2: APAM Modeling Fair Deal Eab 3 https://www.osti.gov/search/identifier:1808429 Document ID: 1161627

Juan Pedro Mendez Granado, Denis Mamaluy, Xujiao Gao, Lisa A Tracy, Evan Mark Anderson, DeAnna Marie Campbell, Jeffrey Andrew Ivie, Tzu-Ming Lu, Scott William Schmucker, Shashank Misra, (2020). Quantum transport in Si: P δ-layer wires Sispad2020 Document ID: 1140367

Xujiao Gao, Lisa A Tracy, Evan Mark Anderson, DeAnna Marie Campbell, Jeffrey Andrew Ivie, Tzu-Ming Lu, Denis Mamaluy, Scott William Schmucker, Shashank Misra, (2020). Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing (APAM) Devices Sispad 2020 Document ID: 1139666

Denis Mamaluy, Juan Granado, Xujiao Gao, (2019). Quantum transport in APAM wires Winds https://www.osti.gov/search/identifier:1643480 Document ID: 1067240

Xujiao Gao, Denis Mamaluy, Evan Mark Anderson, DeAnna Marie Campbell, Albert Dario Grine, Aaron Michael Katzenmeyer, Tzu-Ming Lu, Scott William Schmucker, Lisa A Tracy, Daniel Robert Ward, Shashank Misra, (2019). Modeling Assisted Atomic Precision Advanced Manufacturing (APAM) Towards Room Temperature Operation Workshop on Innovative Nanoscale Devices and Systems https://www.osti.gov/search/identifier:1643549 Document ID: 1067011

Xujiao Gao, Denis Mamaluy, Michael Goldflam, (2019). FAIR DEAL GC Thrust 2: APAM modeling Fair Deal Eab 2 https://www.osti.gov/search/identifier:1646191 Document ID: 1054072

Xujiao Gao, Denis Mamaluy, Lisa A Tracy, Daniel Robert Ward, Ezra Bussmann, (2019). Modeling assisted APAM towards room temperature operation Fair Deal Gc Eab 2 https://www.osti.gov/search/identifier:1700540 Document ID: 1054217

Denis Mamaluy, Juan Pedro Mendez Granado, Xujiao Gao, (2019). Quantum Transport in APAM Wires: Consequences of the novel electronic structure of Si:P δ-layered systems Fair Deal Gc Eab 2 https://www.osti.gov/search/identifier:1700543 Document ID: 1054387

Xujiao Gao, Denis Mamaluy, Evan Mark Anderson, DeAnna Marie Campbell, Albert Dario Grine, Aaron Michael Katzenmeyer, Tzu-Ming Lu, Scott William Schmucker, Lisa A Tracy, Daniel Robert Ward, Shashank Misra, (2019). Modeling Assisted Atomic Precision Advanced Manufacturing (APAM) Towards Room Temperature Operation Workshop on Innovative Nanoscale Devices and Systems Document ID: 1033290

Denis Mamaluy, Juan P. Mendez, Xujiao Gao, (2019). Quantum Transport in APAM Wires Workshop on Innovative Nanoscale Devices and Systems Document ID: 1033291

Denis Mamaluy, Xujiao Gao, Leon Maurer, (2019). FAIR DEAL GC Thrust #2: APAM Modeling FAIR DEAL External Advisory Board #1 https://www.osti.gov/search/identifier:1592213 Document ID: 901918

Frederick B. McCormick, Matthew Marinella, Alan Mitchell, Olle Heinonen, Conrad D. James, Denis Mamaluy, Toni Taylor, Maya (LLNL) Gokhale, John (LBL) Shalf, Candace (LANL) Culhane, (2018). Solving the Information Technology Challenge Beyond Moore?s Law https://www.osti.gov/search/identifier:1527319 Document ID: 693038

Denis Mamaluy, (2017). Creating a Universal Charge-based Device Simulator Cis Erb Document ID: 670654

Denis Mamaluy, (2017). Beyond Moore?s Computing (BMC): Fundamental Downscaling Limit of Field-effect Transistors and New Possibilities for Continued Increase of Computing Power NGC2017 conference Document ID: 626183

Lawrence Musson, Gary L. Hennigan, Xujiao Gao, Denis Mamaluy, (2016). RAMSES / Charon Progress and Code Collaboration Overview Jowog-6 https://www.osti.gov/search/identifier:1410250 Document ID: 554258

Denis Mamaluy, Xujiao Gao, Brian David Tierney, (2016). Fully-Coupled Thermo-Electrical Modeling and Simulation of Transition Metal Oxide Memristors https://www.osti.gov/search/identifier:1331433 Document ID: 530680

Denis Mamaluy, Xujiao Gao, Matthew Marinella, (2016). Comprehensive Assessment of Oxide Memristors as Post-CMOS Memory and Logic Devices Ecs-229 https://www.osti.gov/search/identifier:1368819 Document ID: 453772

Xujiao Gao, Denis Mamaluy, Eric Christopher Cyr, Matthew Marinella, (2016). Comprehensive Assessment of Oxide Memristors as Post-CMOS Memory and Logic Devices ECS Transactions https://www.osti.gov/search/identifier:1257786 Document ID: 409673

Xujiao Gao, Denis Mamaluy, Eric Christopher Cyr, Matthew Marinella, (2016). Fully-coupled Thermo-electrical Modeling of Oxide-based Memristors 58th Electronic Materials Conference Document ID: 397344

Xujiao Gao, Denis Mamaluy, Eric Christopher Cyr, Matthew Marinella, (2015). Comprehensive assessment of oxide memristors as post-CMOS memory and logic devices 229th ECS Meeting Document ID: 365637

Matthew Marinella, Sapan Agarwal, David Russell Hughart, Steven J. Plimpton, Ojas D. Parekh, Tu-Thach Quach, Erik Debenedictis, Ronald S. Goeke, Patrick Sean Finnegan, Rudeger H.T. Wilke, Denis Mamaluy, Harold P. Hjalmarson, Brian David Tierney, Alexander W Hsia, James Bradley Aimone, Conrad D. James, (2015). Acceleration of Neural Algorithms using Nanoelectronic Resistive Memory Crossbars IEEE Rebooting Computing Symposium 4 Document ID: 364990

Denis Mamaluy, Xujiao Gao, (2015). Memristor Simulator Aids Synthesis of Efficient Devices Document ID: 354159

Brian David Tierney, Harold P. Hjalmarson, Michael Lee McLain, David Russell Hughart, Matthew Marinella, Denis Mamaluy, (2015). Transport Physics in Thin-Film Oxides: From Capacitors to Memristors American Physical Society (APS) 2016 March Meeting https://www.osti.gov/search/identifier:1331866 Document ID: 354260

Xujiao Gao, Denis Mamaluy, Patrick R. Mickel, Matthew Marinella, (2015). Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors 228th ECS Meeting https://www.osti.gov/search/identifier:1334585 Document ID: 342779

Xujiao Gao, Denis Mamaluy, Patrick R. Mickel, Matthew Marinella, (2015). Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors ECS Transactions https://www.osti.gov/search/identifier:1237669 Document ID: 308046

Marie Danielle Arrowsmith, Daniel Robert Guildenbecher, Denis Mamaluy, (2015). LDRD @ SNL May 2015 https://www.osti.gov/search/identifier:1184074 Document ID: 286401

Xujiao Gao, Patrick R. Mickel, Denis Mamaluy, Matthew Marinella, (2015). Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors 228th Electrochemical Society (ECS) Meeting Document ID: 264967

Denis Mamaluy, Xujiao Gao, (2015). The fundamental downscaling limit of field effect transistors Applied Physics Letters https://www.osti.gov/search/identifier:1235268 Document ID: 243263

Brian David Tierney, Harold P. Hjalmarson, Michael Lee McLain, Denis Mamaluy, (2015). The Role of Joule Heating and Defect Chemistry in Memristor Modeling American Physical Society – March 2015 Meeting https://www.osti.gov/search/identifier:1241114 Document ID: 222042

Xujiao Gao, Denis Mamaluy, Patrick R. Mickel, Matthew Marinella, (2015). Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Oxide Memristors APS March Meeting 2015 https://www.osti.gov/search/identifier:1240110 Document ID: 221942

Harold P. Hjalmarson, Brian David Tierney, Michael Lee McLain, Denis Mamaluy, (2014). The Role of Joule Heating and Defect Chemistry in Memristor Modeling American Physical Society March Meeting Document ID: 208361

Xujiao Gao, Denis Mamaluy, Patrick R. Mickel, Brian David Tierney, Harold P. Hjalmarson, (2014). Three-dimensional Fully-coupled Electrical and Thermal Transport Model of Oxide Memristors APS March Meeting 2015 Document ID: 208213

Denis Mamaluy, Xujiao Gao, Brian David Tierney, (2014). The ultimate downscaling limit of FETs https://www.osti.gov/search/identifier:1160288 Document ID: 155779

Matthew Marinella, Patrick R. Mickel, Andrew Lohn, David Russell Hughart, Robert James Bondi, Denis Mamaluy, Harold P. Hjalmarson, James E. Stevens, Seth Decker, Roger Apodaca, Brian Robert Evans, James Bradley Aimone, Fredrick Rothganger, Conrad D. James, Erik Debenedictis, (2014). Development, Characterization, and Modeling of a TaOx ReRAM for a Neuromorphic Accelerator https://www.osti.gov/search/identifier:1241888 Document ID: 166432

Matthew Marinella, Patrick R. Mickel, Andrew Lohn, David Russell Hughart, Robert James Bondi, Denis Mamaluy, Harold P. Hjalmarson, James E. Stevens, Seth Decker, Roger Apodaca, Brian Robert Evans, James Bradley Aimone, Fredrick Rothganger, Conrad D. James, Erik Debenedictis, (2014). Development, Characterization, and Modeling of a TaOx ReRAM for a Neuromorphic Accelerator 226th Meeting of the Electrochemical Society https://www.osti.gov/search/identifier:1241770 Document ID: 112468

Xujiao Gao, Denis Mamaluy, (2014). Quantum Transport Simulation and Optimization of Below-6-nm Si FinFETs with HfSiON/SiO2 Gate Dielectrics 2014 International Conference on Superlattices, Nanostructures and Nanodevices https://www.osti.gov/search/identifier:1496695 Document ID: 132604

Harold P. Hjalmarson, Michael Lee McLain, Denis Mamaluy, Xujiao Gao, (2014). Memristor Physics Driven by Joule Heating American Physical Society March Meeting https://www.osti.gov/search/identifier:1140850 Document ID: 5333528

Xujiao Gao, Denis Mamaluy, Erik Nielsen, Ralph W. Young, Richard P. Muller, Nathaniel Bishop, Michael Lilly, Malcolm S. Carroll, Amir Shirkhorshidian, (2013). Efficient self-consistent quantum transport simulator for quantum devices Journal of Applied Physics https://www.osti.gov/search/identifier:1121374 Document ID: 5330609

Xujiao Gao, Denis Mamaluy, Erik Nielsen, Richard P. Muller, Ralph W. Young, Nathaniel Bishop, Michael Lilly, Malcolm S. Carroll, (2013). Efficient Self-Consistent Quantum Transport Simulator for Quantum Well Devices 16th International Workshop on Computational Electronics https://www.osti.gov/search/identifier:1080393 Document ID: 5323009

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Awards & Recognition

2022

Denis Mamaluy, Juan Pedro Mendez Granado, FAIR DEAL Grand Challenge LDRD Project, Sandia National Laboratories , Sandia National Laboratories, Team A - INNOVATION, Divisions ESD - 5000 , May 3, 2022

2021

Denis Mamaluy, Juan Pedro Mendez Granado, Recognized at D1K Tier Board, D1K Tier Board, Susan Seestrom, Recognized for https://www.nature.com/articles/s42005-021-00705-1 , October 11, 2021

2012

Denis Mamaluy, Senior Member, IEEE, Senior Member is the highest professional grade of the IEEE for which a member may apply. It requires experience, and reflects professional accomplishment and maturity. Only 8% of IEEE 416,000 members have achieved this level., September 4, 2012