The Puerto Rico Electric Power Authority (PREPA) installed a battery energy storage system in 1994 at a substation near San Juan, Puerto Rico. It was patterned after two other large energy storage systems operated by electric utilities in California and Germany. The Puerto Rico facility is presently the largest operating battery storage system in the world and has successfully provided frequency control, voltage regulation, and spinning reseme to the Caribbean island. The system further proved its usefulness to the PREPA network in the fall of 1998 in the aftermath of Hurricane Georges. However, the facility has suffered accelerated cell failures in the past year and PREPA is committed to restoring the plant to full capacity. This represents the first repowering of a large utility battery facility. PREPA and its vendors and contractors learned many valuable lessons during all phases of project development and operation, which are summarized in this paper.
Recycling of the spent rinse water discharged from the wet benches commonly used in semiconductor processing is one tactic for responding to the targets for water usage published in the 1997 National Technology Roadmap for Semiconductors (NTRS). Not only does the NTRS list a target that dramatically reduces total water usage/unit area of silicon manufactured by the industry in the future but for the years 2003 and beyond, the NTRS actually touts goals which would have semiconductor manufacturers drawing less water from a regional water supply per unit area of silicon manufactured than the quantity of ultrapure water (UPW) used in the production of that same silicon. Achieving this latter NTRS target strongly implies more widespread recycling of spent rinse waters at semiconductor manufacturing sites. In spite of the fact that, by most metrics, spent rinse waters are of much higher purity than incoming municipal waters, recycling of these spent rinse waters back into the UPW production plant is not a simple, straightforward task. The rub is that certain of the chemicals used in semiconductor manufacturing, and thus potentially present in trace concentrations (or more) in spent rinse waters, are not found in municipal water supplies and are not necessarily removed by the conventional UPW production sequence used by semiconductor manufacturers. Some of these contaminants, unique to spent rinse waters, may actually foul the resins and membranes of the UPW system, posing a threat to UPW production and potentially even causing a shutdown.
Two and three electrode impedance measurements were made on 18650 Li-ion cells at different QB temperatures ranging from 35 C to {minus}40 C. The ohmic resistance of the cell is nearly constant the temperature range studied although the total cell impedance increases by an order of magnitude in the same temperature range. In contrast to what is commonly believed, we show from our three-electrode impedance results that, the increase in cell impedance comes mostly from the cathode and not from the anode. Further, the anode and cathode contribute to both the impedance loops (in the NyQuist plot).
XPS studies have been carried out on sputter deposited copper on a substantially hydroxylated {alpha}-Al{sub 2}O{sub 3}(0001) (sapphire) surface under ultra-high vacuum (UHV) conditions. XPS-derived Cu uptake curves show a sharp change in slope at a coverage of 0.35 monolayer (on a Cu/O atomic basis), indicative of initial layer-by-layer growth. CU(LMM) lineshape data indicate that, prior to the first break in the curve, Cu is oxidized to Cu(I). At higher coverages, metallic CU(0) is. observed. These data agree with first principles theoretical calculations, indicating that the presence of ad-hydroxyl groups greatly enhances the binding of Cu to bulk sapphire surfaces, stabilizing Cu(I) adatoms over two-dimensional metallic islands. In the absence of hydroxylation, calculations indicate significantly weaker Cu binding to the bulk sapphire substrate and non-wetting. Calculations also predict that at Cu coverages above 1/3 monolayer (ML), Cu-Cu interactions predominate, leading to Cu(0) formation. These results are in excellent agreement with experiment. The ability of surface hydroxyl groups to enhance binding to alumina substrates suggests a reason for contradictory experimental results reported in the literature for Cu wetting of alumina.
Quartz crystal microbalance techniques and in situ spectroscopic ellipsometry are used to probe the structure-dependent intrinsic viscoelastic properties of self-assembled CH{sub 3}(CH{sub 2}){sub 8}SH alkanethiol monolayer adsorbed from the gas phase onto Au(111)-textured substrates. Physisorbed molecules, mixed chemisorbed-fluid/solid phases and solid-phase domain boundaries make sequentially dominant contributions to the measured energy dissipation in the growing monolayer. Deviations from Langmuir adsorption kinetics reveal a precursor-mediated adsorption channel. These studies reveal the impact of structural heterogeneity in tribological studies of monolayer lubricants.
In this paper, we include for discussion three topics of current interest in metal oxide surface science. Using first principles density functional theory (DFT) [1] calculations, we have investigated: (1) the atomic-scale structure of experimentally-relevant ultrathin alumina films, (2) the role of common point defects in metal island nucleation on oxide terraces, and (3) the growth and morphology of metals on oxide surfaces which have high concentrations of a common impurity.
Pressure studies have provided new insights into the physics of compositionally-disordered ABO{sub 3} oxide relaxors. Specifically results are presented and discussed on a pressure-induced ferroelectric-to-relaxor crossover phenomenon, the continuous evolution of the energetics and dynamics of the relaxation process, and the interplay between pressure and electric field in determining the dielectric response.
We report propane dehydrogenation behavior of catalysts prepared using two novel synthesis strategies that combine inverse micelle Pt nanocluster technology with silica and alumina sol-gel processing. Unlike some other sol-gel catalyst preparations. Pt particles in these catalysts are not encapsulated in the support structure and the entire Pt particle surface is accessible for reaction. Turnover frequencies (TOF) for these catalysts are comparable to those obtained over Pt catalysts prepared by traditional techniques such as impregnation, yet the resistance to deactivation by carbon poisoning is much greater in our catalysts. The deactivation behavior is more typical of traditionally prepared PtSn catalysts than of pure Pt catalysts.
The effect of higher-order corrections to the Born approximation is studied for the previously obtained giant conductance enhancement in tunnel-coupled double quantum wires in a parallel magnetic field. The relative correction is found to be significant and depends on various effects such as the magnetic field, electron and impurity densities, impurity positions, symmetric and asymmetric doping profiles, and center barrier thickness.
Fluids adsorbed near surfaces, macromolecules, and in porous materials are inhomogeneous, inhibiting spatially varying density distributions. This inhomogeneity in the fluid plays an important role in controlling a wide variety of complex physical phenomena including wetting, self-assembly, corrosion, and molecular recognition. One of the key methods for studying the properties of inhomogeneous fluids in simple geometries has been density functional theory (DFT). However, there has been a conspicuous lack of calculations in complex 2D and 3D geometries. The computational difficulty arises from the need to perform nested integrals that are due to nonlocal terms in the free energy functional These integral equations are expensive both in evaluation time and in memory requirements; however, the expense can be mitigated by intelligent algorithms and the use of parallel computers. This paper details our efforts to develop efficient numerical algorithms so that no local DFT calculations in complex geometries that require two or three dimensions can be performed. The success of this implementation will enable the study of solvation effects at heterogeneous surfaces, in zeolites, in solvated (bio)polymers, and in colloidal suspensions.
In a previous companion paper, we presented the details of our algorithms for performing nonlocal density functional theory (DFT) calculations in complex 2D and 3D geometries. We discussed scaling and parallelization, but did not discuss other issues of performance. In this paper, we detail the precision of our methods with respect to changes in the mesh spacing. This is a complex issue because given a Cartesian mesh, changes in mesh spacing will result in changes in surface geometry. We discuss these issue using a series of rigid solvated polymer models including square rod polymers, cylindrical polymers, and bead-chain polymers. By comparing the results of the various models, it becomes clear that surface curvature or roughness plays an important role in determining the strength of structural solvation forces between interacting solvated polymers. The results in this paper serve as benchmarks for future application of these algorithms to complex fluid systems.
This paper summarizes the results of the studies of the irradiation-induced formation of nanostructures, where the injected interstitials from the source of irradiation are not major components of the nanophase. This phenomena has been observed by in situ transmission electron microscopy (TEM) in a number of intermetallic compounds and ceramics during high-energy electron or ion irradiations when the ions completely penetrate through the specimen. Beginning with single crystals, electron or ion irradiation in a certain temperature range may result in nanostructures composed of amorphous domains and nanocrystals with either the original composition and crystal structure or new nanophases formed by decomposition of the target material. The phenomenon has also been observed in natural materials which have suffered irradiation from the decay of constituent radioactive elements and in nuclear reactor fuels which have been irradiated by fission neutrons and other fission products. The mechanisms involved in the process of this nanophase formation are discussed in terms of the evolution of displacement cascades, radiation-induced defect accumulation, radiation-induced segregation and phase decomposition, as well as the competition between irradiation-induced amorphization and recrystallization.
Ashby, Carol I.H.; Baca, Albert G.; Chang, P.C.; Hafich, M.J.; Hammons, B.E.; Zavadil, Kevin R.
A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.
Geothermal research study at Sandia National Laboratories has conducted a program in slimhole drilling research since 1992. Although our original interest focused on slim holes as an exploration method, it has also become apparent that they have substantial potential for driving small-scale, off-grid power plants. This paper summarizes Sandia's slim-hole research program, describes technology used in a ''typical'' slimhole drilling project, presents an evaluation of using slim holes for small power plants, and lists some of the research topics that deserve further investigation.
Low temperature electrical performance characteristics of A and T, Moli, and Panasonic 18650 Li-ion cells are described. Ragone plots of energy and power data of the cells for different temperatures from 25 C to {minus}40 C are compared. Although the electrical performance of these cells at and around room temperature is respectable, at temperatures below 0 C the performance is poor. For example, the delivered power and energy densities of the Panasonic cells at 25 C are {approximately}800 W/l and {approximately}100 Wh/l respectively and those at {minus}40 C are <10 W/l and {approximately}5 Wh/l. In order to identify the source for this poor performance at subambient temperatures, both 2- and 3-electrode impedance studies were made on these cells. The 2-electrode impedance data suggests that the cell ohmic resistance remains nearly constant from 25 C to {minus}20 C but increases modestly at {minus}40 C while the overall cell impedance increases by an order of magnitude over the same temperature range. The 3-electrode impedance data of the A and T cells show that the increase in cell resistance comes mostly from the cathode electrolyte interface and very little either from the anode electrolyte interface or from the ohmic resistance of the cell. This suggests that the poor performance of the cells comes mainly from the high cathode/electrolyte interfacial impedance.
Francke, Chris T.; Hansen, Frank D.; Knowles, M.K.; Patchet, Stanley J.; Rempe, Norbert T.
The Waste Isolation Pilot Plant (WIPP) is the first nuclear waste repository certified by the United States Environmental Protection Agency. Success in regulatory compliance resulted from an excellent natural setting for such a repository, a facility with multiple, redundant safety systems, and from a rigorous, transparent scientific and technical evaluation. The WIPP story, which has evolved over the past 25 years, has generated a library of publications and analyses. Details of the multifaceted program are contained in the cited references. Selected geotechnical highlights prove the eminent suitability of the WIPP to serve its congressionally mandated purpose.
The purpose of this panel is to present different perspectives and opinions regarding the issues surrounding why software should or shouldn't be entrusted with critical (high consequence) functionality.
Measurements of dielectric breakdown during high-field electrical stress are typically performed at or near room temperature via constant voltage or current stress methods. In this summary they explore whether useful information might also be obtained by performing current measurements during a temperature ramp at high electric field.
High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.
We gain-switch flared waveguide lasers to obtain 14.5 W peak powers and 0.5 nJ pulse energies with laser structures compatible with the generation of diffraction-limited beams. The results are in excellent agreement with a microscopic laser model.
The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.
Organically modified alkoxy silanes play an important role in tailoring different properties of silica produced by the sol-gel method. Changes in the size and functionality of the organic group allows control of both physical and chemical properties of the resulting gel, with the kinetics of the polymerization process playing an important role in the design of new siloxane materials. High resolution {sup 29}Si NMR has proven to be valuable tool for monitoring the polymerization reaction, and has been used to investigate a variety of organically modified alkoxy silane systems.
This paper will focus on the required growth conditions for self-doping metals and the various lifetime issues. Recent results for a novel self-doping metal system will be discussed briefly.
Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.