Publications

Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., Kaplar, R., & Kaplar, R. (2023). AlGaN High Electron Mobility Transistor for High-Temperature Logic. Journal of Microelectronics and Electronic Packaging, 20(1). 10.4071/imaps.1832996

Kaplar, R., Yates, L., Gunning, B.P., Crawford, M.H., Steinfeldt, J.A., Foulk, J.W., Abate, V.M., Dickerson, J., Armstrong, A., Binder, A., Allerman, A., Sharps, P., Flicker, J.D., & Flicker, J.D. (2022). Realization of Medium-Voltage Vertical GaN PiN Diodes (invited) [Conference Presentation]. 10.2172/2003119

Allerman, A., Crawford, M.H., Binder, A., Armstrong, A., Pickrell, G.W., Abate, V.M., Steinfeldt, J.A., Kaplar, R., & Kaplar, R. (2022). Selective Area Regrowth of p-type GaN and AlGaN for Power Diodes (invited) [Conference Presentation]. 10.2172/2003079

Yates, L., Gunning, B.P., Crawford, M.H., Steinfeldt, J.A., Smith, M.L., Abate, V.M., Dickerson, J., Armstrong, A., Binder, A., Allerman, A., Kaplar, R., & Kaplar, R. (2022). Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions. IEEE Transactions on Electron Devices, 69(4), pp. 1931-1937. 10.1109/ted.2022.3154665

Kaplar, R., Binder, A., Crawford, M.H., Allerman, A., Gunning, B.P., Flicker, J.D., Yates, L., Armstrong, A., Dickerson, J., Glaser, C.E., Steinfeldt, J.A., Abate, V.M., Smith, M.L., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A.G., Koehler, A., … Cooper, J.A. (2022). Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited) [Conference Presentation]. 10.2172/2001791

Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Abate, V.M., Smith, M.L., Pickrell, G.W., Sharps, P., Neely, J.C., Rashkin, L.J., Gill, L., Goodrick, K., Anderson, T., Gallagher, J., … Cooper, J.A. (2021). Recent Progress in Vertical Gallium Nitride Power Devices [Conference Presentation]. 10.2172/1900106

Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Abate, V.M., Smith, M., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A.G., Koehler, A., Tadjer, M., Hobart, K., … Cooper, J.A. (2021). Vertical GaN PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics [Conference Presentation]. 10.2172/1891242

Kaplar, R., Binder, A., Yates, L., Allerman, A., Crawford, M.H., Dickerson, J., Armstrong, A., Glaser, C.E., Steinfeldt, B., Abate, V.M., Foulk, J.W., Pickrell, G.W., Sharps, P., Flicker, J.D., Neely, J.C., Rashkin, L.J., Gill, L., Goodrick, K., Monson, T., … Cooper, J. (2021). Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited) [Conference Presentation]. 10.2172/1890896

Kaplar, R., Allerman, A., Crawford, M.H., Gunning, B.P., Flicker, J.D., Armstrong, A., Yates, L., Dickerson, J., Binder, A., Abate, V.M., Smith, M., Pickrell, G.W., Sharps, P., Anderson, T., Gallagher, J., Jacobs, A.G., Koehler, A., Tadjer, M., Hobart, K., … Cooper, J.A. (2021). Vertical GaN Devices for Medium-Voltage Power Electronics [Conference Presentation]. 10.2172/1891243

Klein, B., Allerman, A., Hines, N., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Pipkin, J.R., Foulk, J.W., Caravello, L.A., Rosprim, M., Kotula, P.G., Abate, V.M., Graham, S., Kaplar, R., & Kaplar, R. (2021). AlGaN Transistors for Digital Logic Applications in High-Temperature Environments [Conference Presentation]. 10.2172/1890854

Allerman, A., Crawford, M.H., Armstrong, A., Binder, A., Kaplar, R., Steinfeldt, J.A., Smith, M., Abate, V.M., & Abate, V.M. (2021). Ultra-wide Bandgap AlGaN Alloys for Power Diodes and Transistors (invited) [Conference Presentation]. 10.2172/1884214

Klein, B., Armstrong, A., Allerman, A., Nordquist, C.D., Neely, J.C., Reza, S., Douglas, E.A., van Heukelom, M., Rice, A., Patel, V.J., Matins, B., Fortune, T., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., Kaplar, R., & Kaplar, R. (2021). AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic [Conference Presentation]. 10.2172/1882105

Allerman, A., Crawford, M.H., Armstrong, A., Pickrell, G.W., Binder, A., Smith, M.L., Abate, V.M., Steinfeldt, J.A., & Steinfeldt, J.A. (2020). Material Challenges of AlGaN PN Diodes for Power Electronics (invited) [Conference Poster]. https://www.osti.gov/biblio/1830966

Armstrong, A., Pickrell, G.W., Allerman, A., Crawford, M.H., Glaser, C.E., Smith, T., Abate, V.M., & Abate, V.M. (2020). High voltage GaN p-n diodes formed by selective area regrowth. Electronics Letters, 56(4), pp. 207-209. 10.1049/el.2019.3587

Allerman, A., Crawford, M.H., Armstrong, A., Pickrell, G.W., Dickerson, J., Kaplar, R., Binder, A., Smith, M.L., Abate, V.M., & Abate, V.M. (2019). Ultra-Wide Bandgap Al-Rich AlGaN Alloys for Power Diodes and Transistors (invited) [Conference Poster]. https://www.osti.gov/biblio/1643447

Pickrell, G.W., Armstrong, A., Allerman, A., Crawford, M.H., Glaser, C.E., Kempisty, J., Abate, V.M., & Abate, V.M. (2019). Investigation of dry-etch-induced defects in >600 v regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy. Journal of Applied Physics, 126(14). 10.1063/1.5110521

Klein, B., Baca, A.G., Lepkowski, S., Nordquist, C.D., Wendt, J.R., Allerman, A., Armstrong, A., Douglas, E.A., Abate, V.M., Kaplar, R., & Kaplar, R. (2019). Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors. Journal of Electronic Materials, 48(9), pp. 5581-5585. 10.1007/s11664-019-07421-1

Pickrell, G.W., Armstrong, A., Allerman, A., Crawford, M.H., Feezell, D., Monavarian, M., Aragon, A.A., Talin, A.A., Leonard, F., Celio, K.C., Glaser, C.E., Kempisty, J., Abate, V.M., & Abate, V.M. (2019). Defect Investigation of Regrown Vertical GaN p-n Diodes Using Deep-Level Optical Spectroscopy [Conference Poster]. https://www.osti.gov/biblio/1641137

Klein, B., Armstrong, A., Baca, A.G., Crawford, M.H., Allerman, A., Abate, V.M., Siegal, M.P., Podkaminer, J., Pickrell, G.W., Douglas, E.A., Perez, C., & Perez, C. (2019). Visible and Solar-Blind Photodetectors Using AlGaN High Electron Mobility Transistors with Nanodot-Based Floating Gate [Conference Poster]. https://www.osti.gov/biblio/1641076

Armstrong, A., Klein, B., Allerman, A., Baca, A.G., Crawford, M.H., Podkaminer, J., Perez, C., Siegal, M.P., Douglas, E.A., Abate, V.M., Leonard, F., & Leonard, F. (2019). Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate. Photonics Research, 7(6), pp. B24-B31. https://doi.org/10.1364/PRJ.7.000B24

Allerman, A., Crawford, M.H., Armstrong, A., Pickrell, G.W., Kaplar, R., Baca, A., Klein, B., Dickerson, J., Lee, S.R., Abate, V.M., Smith, M.L., Glaser, C.E., & Glaser, C.E. (2019). MOCVD Growth of AlGaN Alloys for Power Transistors (invited) [Presentation]. https://www.osti.gov/biblio/1645266

Klein, B., Douglas, E.A., Armstrong, A., Allerman, A., Abate, V.M., Fortune, T., Baca, A.G., & Baca, A.G. (2019). Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment. Applied Physics Letters, 114(11). 10.1063/1.5064543

Armstrong, A., Douglas, E.A., Klein, B., Baca, A.G., Crawford, M.H., Allerman, A., Abate, V.M., Siegal, M.P., Podkaminer, J., Perez, C., & Perez, C. (2019). Al-Rich AlGaN Transistors for UV Photodetection (invited) [Conference Poster]. https://www.osti.gov/biblio/1639217

Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Kaplar, R., Talin, A.A., Leonard, F., Celio, K.C., Aragon, A., Stricklin, I., Monavarian, M., Feezell, D., Abate, V.M., Glaser, C.E., & Glaser, C.E. (2018). Growth of Power Devices Based on III-Nitride Semiconductors (Invited) [Conference Poster]. https://www.osti.gov/biblio/1592360

Allerman, A., Pickrell, G.W., Armstrong, A., Crawford, M.H., Celio, K.C., Talin, A.A., Leonard, F., Kaplar, R., Dickerson, J., Abate, V.M., & Abate, V.M. (2018). Material Advances Toward Vertically-Conducting AlGaN Power Transistors (invited) [Conference Poster]. https://www.osti.gov/biblio/1806968

Baca, A.G., Armstrong, A., Klein, B., Douglas, E.A., Allerman, A., Abate, V.M., Kaplar, R., & Kaplar, R. (2018). Power Electronics Devices based on Al-rich Aluminum Gallium Nitride [Conference Poster]. https://www.osti.gov/biblio/1806875

Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Abate, V.M., Smith, M.L., Cross, K.C., & Cross, K.C. (2018). The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates (invited) [Conference Poster]. https://www.osti.gov/biblio/1582257

Armstrong, A., Douglas, E.A., Klein, B., Baca, A.G., Crawford, M.H., Allerman, A., Abate, V.M., Siegal, M.P., Podkaminer, J., Perez, C., & Perez, C. (2018). Ultra-wide band gap AlGaN electronics and opto-electronics [Conference Poster]. https://www.osti.gov/biblio/1581707

Armstrong, A., Douglas, E.A., Klein, B., Baca, A.G., Crawford, M.H., Allerman, A., Abate, V.M., Siegal, M.P., Podkaminer, J., Perez, C., & Perez, C. (2018). Ultra-wide band gap AlGaN electronics and opto-electronics [Conference Poster]. https://www.osti.gov/biblio/1581718

Pickrell, G.W., Armstrong, A., Allerman, A., Crawford, M.H., Glaser, C.E., Abate, V.M., & Abate, V.M. (2018). Exceptional Service in the National Interest [Conference Poster]. https://www.osti.gov/biblio/1806798

Klein, B., Douglas, E.A., Armstrong, A., Allerman, A., Abate, V.M., Baca, A.G., & Baca, A.G. (2018). Fabrication of Enhancement-Mode Al0.45Ga0.55N / Al0.3Ga0.7N HEMT by Fluorine Plasma Treatment [Conference Poster]. https://www.osti.gov/biblio/1530929

Crawford, M.H., Allerman, A., Armstrong, A., Kaplar, R., Pickrell, G.W., Dickerson, J., Smith, M.L., Cross, K.C., Abate, V.M., Glaser, C.E., van Heukelom, M., & van Heukelom, M. (2018). Materials Challenges of AlGaN-Based Power Electronics and UV Lasers (invited) [Conference Poster]. https://www.osti.gov/biblio/1524137

Armstrong, A., Douglas, E.A., Klein, B., Baca, A.G., Fortune, T., Allerman, A., Abate, V.M., & Abate, V.M. (2018). Normally-off AIGaN transistors [Conference Poster]. https://www.osti.gov/biblio/1575332

Klein, B., Douglas, E.A., Armstrong, A., Allerman, A., Abate, V.M., Baca, A.G., & Baca, A.G. (2018). Fabrication of Enhancement-Mode Al0.45Ga0.55N/Al0.3Ga0.7N HEMT by Fluorine Plasma Treatment [Conference Poster]. https://www.osti.gov/biblio/1513731

Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Abate, V.M., Smith, M.L., Cross, K.C., & Cross, K.C. (2017). The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates [Conference Poster]. https://www.osti.gov/biblio/1484085

Klein, B., Baca, A.G., Armstrong, A., Allerman, A., Sanchez, C.A., Douglas, E.A., Crawford, M.H., Miller, M.A., Kotula, P.G., Fortune, T., Abate, V.M., & Abate, V.M. (2017). Planar Ohmic Contacts to Al _0.45 Ga _0.55 N/Al _0.3 Ga _0.7 N High Electron Mobility Transistors. ECS Journal of Solid State Science and Technology, 6(11). 10.1149/2.0181711jss