Publications

Klein, B., Allerman, A., Armstrong, A., Rosprim, M., Burt, C.J., Neely, J.C., McDonough, M., Chung, H., Kropka, K.E., Colon, A., Foulk, J.W., Rice, A., Tyznik, C., Matins, B., Douglas, E.A., Kaplar, R., & Kaplar, R. (2023). Recent Advancements in (Al)GaN High Electron Mobility Transistor Power Electronics at Sandia [Conference Presentation]. 10.2172/2430473

Crowder, D.C., Douglas, E.A., James, C.D., Tsao, J.Y., & Tsao, J.Y. (2022). AI-Enhanced Co-Design for Next-Generation Microelectronics: Innovating Innovation [Workshop Report]. 10.2172/2430493

Grine, A.J., Siddiqui, A., Keeler, G.A., Shaw, M.J., Eichenfield, M., Friedmann, T.A., Douglas, E.A., Wood, M.G., Dagel, D., Hains, C., Koch, L., Nordquist, C.D., Soudachanh, A.L., Matins, B., Serkland, D.K., & Serkland, D.K. (2022). Optomechanical Spring Effect Readout in Resonant Micro-Optical Sagnac Gyroscopes: Design and Scaling Analysis [Conference Poster]. 10.1109/OMN.2017.8051509

Lee, J., Biedermann, G., Mudrick, J.P., Douglas, E.A., Jau, Y., & Jau, Y. (2021). Demonstration of a MOT in a sub-millimeter membrane hole. Scientific Reports, 11(1). https://doi.org/10.1038/s41598-021-87927-z

Sharps, P., Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., Paisley, E., Baca, A., Klein, B., Douglas, E.A., Binder, A., Yates, L., Lee, S.R., Simmons, J., Tsao, J.Y., & Tsao, J.Y. (2021). WBG & UWBG Semiconductors for Power Electronics [Presentation]. https://www.osti.gov/biblio/1888422

Esteves, G., Lundh, J.S., Coleman, K., Song, Y., Griffin, B.A., Douglas, E.A., Edstrand, A., Badescu, S.C., Leach, J.H., Moody, B., Trolier-McKinstry, S., Choi, S., Moore, E.A., & Moore, E.A. (2021). Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy. Journal of Applied Physics, 130(4). 10.1063/5.0056302

Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., Paisley, E., Baca, A., Klein, B., Douglas, E.A., Reza, S., Binder, A., Yates, L., Slobodyan, O., Sharps, P., Simmons, J., Tsao, J.Y., … Chowdhury, S. (2021). Ultra-Wide-Bandgap Semiconductors: Challenges and Opportunities (invited) [Presentation]. https://www.osti.gov/biblio/1889053

Klein, B., Armstrong, A., Allerman, A., Nordquist, C.D., Neely, J.C., Reza, S., Douglas, E.A., van Heukelom, M., Rice, A., Patel, V.J., Matins, B., Fortune, T., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., Kaplar, R., & Kaplar, R. (2021). AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic [Conference Presentation]. 10.2172/1882105

Kaplar, R., Baca, A.G., Douglas, E.A., Klein, B., Allerman, A., Crawford, M.H., Reza, S., & Reza, S. (2021). High-Al-content heterostructures and devices. Semiconductors and Semimetals. 10.1016/bs.semsem.2021.05.001

Kaplar, R., Allerman, A., Armstrong, A., Baca, A.G., Binder, A., Crawford, M.H., Dickerson, J., Douglas, E.A., Flicker, J.D., Klein, B., Neely, J.C., Reza, S., Sharps, P., Slobodyan, O., Yates, L., & Yates, L. (2020). Panel Discussion ? Ultra-Wide Bandgap Materials Devices and Systems [Presentation]. https://www.osti.gov/biblio/1835965

Lee, J., Biedermann, G., Mudrick, J.P., Douglas, E.A., Jau, Y., & Jau, Y. (2020). Membrane MOT: Trapping Dense Cold Atoms in a Sub-Millimeter Diameter Hole of a Microfabricated Membrane Device. Optics Letter. 10.1038/s41598-021-87927-z

Baca, A.G., Klein, B., Armstrong, A., Allerman, A., Douglas, E.A., Kaplar, R., & Kaplar, R. (2020). The Outlook for Al-Rich AlGaN Transistors (Invited) [Conference Presentation]. 10.2172/1825616

Esteves, G., Yen, S., Young, T., Henry, M.D., Douglas, E.A., Griffin, B., Nordquist, C.D., & Nordquist, C.D. (2020). AlN-Alloyed-Based Wideband Multiplexers for Situational Spectral Awareness [Presentation]. https://www.osti.gov/biblio/1831376

Douglas, E.A., Hollowell, A.E., Jordan, M., Friedmann, T.A., Wood, M.G., Arrington, C.L., Musick, K.M., McClain, J., & McClain, J. (2020). Advancing Compound Semiconductors Through Heterogeneous Integration [Conference Poster]. https://www.osti.gov/biblio/1821083

Douglas, E.A., Klein, B., Reza, S., Allerman, A., Kaplar, R., Armstrong, A., Baca, A.G., & Baca, A.G. (2020). Current Enhancement for Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors by Regrowth Contact Design [Conference Poster]. https://www.osti.gov/biblio/1821081

Douglas, E.A., Klein, B., Baca, A.G., Allerman, A., Armstrong, A.M., Kaplar, R.J., Esteves, G., Henry, M.D., Griffin, O.B., & Griffin, O.B. (2020). Ultra-Wide Bandgap Materials: Enabling Technologies from Power Electronics to MEMS [Presentation]. https://www.osti.gov/biblio/1821082

Carey, P.H., Ren, F., Armstrong, A., Klein, B., Allerman, A., Douglas, E.A., Baca, A.G., Pearton, S.J., & Pearton, S.J. (2020). High temperature operation to 500 °c of AlGaN graded polarization-doped field-effect transistors. Journal of Vacuum Science and Technology B, 38(3). 10.1116/1.5135590

Baca, A.G., Armstrong, A., Klein, B., Allerman, A., Douglas, E.A., Kaplar, R.J., & Kaplar, R.J. (2020). Al-rich AlGaN based transistors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 38(2). https://doi.org/10.1116/1.5129803

Douglas, E.A., Shul, R.J., Pearton, S.J., Ren, F., & Ren, F. (2020). Plasma etching of wide bandgap and ultrawide bandgap semiconductors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 38(2). https://doi.org/10.1116/1.5131343

Reza, S., Kaplar, R., Armstrong, A., Baca, A.G., Klein, B., Douglas, E.A., Allerman, A., Crawford, M.H., Dickerson, J., Binder, A., Flicker, J.D., Neely, J.C., Slobodyan, O., & Slobodyan, O. (2020). Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications [Conference Poster]. https://www.osti.gov/biblio/1768356

Kaplar, R., Armstrong, A., Baca, A.G., Klein, B., Douglas, E.A., Reza, S., Allerman, A., Crawford, M.H., Dickerson, J., Binder, A., Flicker, J.D., Neely, J.C., Slobodyan, O., & Slobodyan, O. (2019). Ultra-Wide-Bandgap Aluminum Gallium Nitride for High-Performance Power-Switching and Radio-Frequency Devices (invited) [Conference Poster]. https://www.osti.gov/biblio/1643509

Baca, A.G., Klein, B., Stephenson, C.A., Armstrong, A., Allerman, A., Douglas, E.A., Fortune, T., Colon, A., & Colon, A. (2019). Reliability Considerations for Al-rich Aluminum Gallium Nitride Power Switching Transistors [Conference Poster]. https://www.osti.gov/biblio/1643067

Klein, B., Baca, A.G., Lepkowski, S., Nordquist, C.D., Wendt, J.R., Allerman, A., Armstrong, A., Douglas, E.A., Abate, V.M., Kaplar, R., & Kaplar, R. (2019). Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors. Journal of Electronic Materials, 48(9), pp. 5581-5585. 10.1007/s11664-019-07421-1

Klein, B., Armstrong, A., Baca, A.G., Crawford, M.H., Allerman, A., Abate, V.M., Siegal, M.P., Podkaminer, J., Pickrell, G.W., Douglas, E.A., Perez, C., & Perez, C. (2019). Visible and Solar-Blind Photodetectors Using AlGaN High Electron Mobility Transistors with Nanodot-Based Floating Gate [Conference Poster]. https://www.osti.gov/biblio/1641076

Armstrong, A., Klein, B., Allerman, A., Baca, A.G., Crawford, M.H., Podkaminer, J., Perez, C., Siegal, M.P., Douglas, E.A., Abate, V.M., Leonard, F., & Leonard, F. (2019). Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate. Photonics Research, 7(6), pp. B24-B31. https://doi.org/10.1364/PRJ.7.000B24