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Anderson, E.M., de Campbell, A., Briscoe, J., Coon, W., Alford, C., Wood, M.G., Klem, J.F., Gamache, P., Gunter, M., Olesberg, J.T., Hawkins, S.D., Rohwer, L.E.S., Stephenson, C.A., Peters, D., Goldflam, M., & Goldflam, M. (2021). Full-resolution two-color infrared detector [Conference Presenation]. 2021 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2021. https://doi.org/10.2172/1878277

Carrasco, R.A., Morath, C.P., Grant, P.C., Ariyawansa, G., Reyner, C.J., Stephenson, C.A., Kadlec, C.N., Hawkins, S.D., Klem, J.F., Steenbergen, E.H., Schaefer, S.T., Johnson, S.R., Zollner, S., Webster, P.T., & Webster, P.T. (2021). Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices. Journal of Applied Physics, 129(18). https://doi.org/10.1063/5.0047178

Wood, M.G., Hains, C., Finnegan, P.S., Stephenson, C.A., Klem, J.F., Looker, Q., & Looker, Q. (2019). Formation of Ohmic Contacts to n-GaAs at Temperatures Compatible with Indium Flip-Chip Bonding [Conference Poster]. https://www.osti.gov/biblio/1642903

Baca, A.G., Klein, B., Stephenson, C.A., Armstrong, A., Allerman, A., Douglas, E.A., Fortune, T., Colon, A., & Colon, A. (2019). Reliability Considerations for Al-rich Aluminum Gallium Nitride Power Switching Transistors [Conference Poster]. https://www.osti.gov/biblio/1643067

Wood, M.G., Hains, C., Finnegan, P.S., Stephenson, C.A., Klem, J.F., Looker, Q., & Looker, Q. (2019). Formation of Ohmic Contacts to n-GaAs at Temperatures Compatible with Indium Flip-Chip Bonding [Conference Poster]. https://www.osti.gov/biblio/1639867

Colon, A., Douglas, E.A., Pope, A.J., Klein, B., Stephenson, C.A., van Heukelom, M., Tauke-Pedretti, A., Baca, A.G., & Baca, A.G. (2019). Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode. Solid-State Electronics, 151(C), pp. 47-51. https://doi.org/10.1016/j.sse.2018.10.009

Baca, A.G., Klein, B., Allerman, A., Armstrong, A., Douglas, E.A., Stephenson, C.A., Fortune, T., Kaplar, R.J., & Kaplar, R.J. (2017). Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. ECS Journal of Solid State Science and Technology, 6(12). https://doi.org/10.1149/2.0231712jss

9 Results
9 Results