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Peterson, A.H., Kropka, K.E., Rice, A., Colon, A., Neely, J.C., & Pickrell, G.W. (2024). Presentation submission for NMAVS [Conference Presentation]. 10.2172/2585108

Yates, L., Binder, A., Allerman, A., Armstrong, A., Steinfeldt, J.A., Smith, M.L., Foulk, J.W., Rice, A., Kaplar, R., & Vuong, H. (2024). High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown [Conference Paper]. https://www.osti.gov/biblio/2540489

Yates, L., Binder, A., Rice, A., Steinfeldt, J.A., Vuong, H., Smith, M.L., Armstrong, A., Allerman, A., Crawford, M.H., Gunning, B.P., & Kaplar, R. (2024). Development of Medium-Voltage High-Current Vertical GaN Power Devices [Conference Presentation]. 10.2172/2540432

Malek, S.C., Wood, M.G., Sovinec, C.L.H., Rice, A., Lee, S.R., Foulk, J.W., Foulk, J.W., & Serkland, D.K. (2024). Nanophotonic Metastructures for Green-Yellow Emission from Non-Planar InGaN Quantum Wells [Conference Presentation]. 2024 Conference on Lasers and Electro-Optics, CLEO 2024. 10.2172/2565165

Klein, B., Allerman, A., Armstrong, A., Rosprim, M., Burt, C.J., Neely, J.C., McDonough, M., Chung, H., Kropka, K.E., Colon, A., Foulk, J.W., Rice, A., Tyznik, C., Matins, B., Douglas, E.A., & Kaplar, R. (2023). Recent Advancements in (Al)GaN High Electron Mobility Transistor Power Electronics at Sandia [Conference Presentation]. 10.2172/2430473

Thrasher, D.A., Schwindt, P.D., Skogen, E.J., Fortuna, S.A., Alford, C., Smith, M.L., Subramania, G.S., Mondragon, J.J., Garcia, E., Rice, A., & Jau, Y. (2023). Performance of a 3 cc Yb+ trap as a microwave clock after 10 years [Conference Presentation]. 10.2172/2431332

Yates, L., Binder, A., Rummel, B.D., Gunning, B., Crawford, M., Smith, M.L., Armstrong, A., Allerman, A., Steinfeldt, J.A., Rice, A., & Kaplar, R. (2023). Design and Evaluation of Vertical GaN PN Diode Junction Termination Extensions in High Temperature Environments [Conference Presentation]. 10.2172/2432069

Kaplar, R., Yates, L., Binder, A., Allerman, A., Armstrong, A., Steinfeldt, J.A., Smith, M.L., Rice, A., Crawford, M., Gunning, B., & Aktas, O. (2023). Progress in Medium-Voltage Vertical GaN Power Devices [Conference Presentation]. 10.2172/2431941

Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., & Kaplar, R. (2023). AlGaN High Electron Mobility Transistor for High-Temperature Logic. Journal of Microelectronics and Electronic Packaging, 20(1). 10.4071/imaps.1832996

Thrasher, D.A., Schwindt, P.D., Skogen, E.J., Fortuna, S.A., Alford, C., Subramania, G.S., Garcia, E., Rice, A., & Jau, Y. (2022). Performance of a 3 cc Yb+ trap as a microwave clock after 10 years [Conference Proceeding]. https://www.osti.gov/biblio/2432183

Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, C., & Kaplar, R. (2022). AlGaN High Electron Mobility Transistor for High Temperature Logic [Conference Presentation]. Advancing Microelectronics. 10.2172/2003976

Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, C., & Kaplar, R. (2022). AlGaN High Electron Mobility Transistor for High Temperature Logic [Conference Proceeding]. 10.4071/imaps.1832996

Rice, A., Tait, C., Lee, S.R., Deitz, J.I., Rodriguez, M.A., Pan, W., Ohta, T., Alliman, D., Peake, G., Sandoval, A., Valdez, N.R., & Sharps, P. (2021). Heteroepitaxy of Dirac semimetal Cd3As2 by MOCVD [Conference Presentation]. 10.2172/1906634

Klein, B., Allerman, A., Hines, N., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Pipkin, J.R., Foulk, J.W., Caravello, L.A., Rosprim, M., Kotula, P.G., Abate, V.M., Graham, S., & Kaplar, R. (2021). AlGaN Transistors for Digital Logic Applications in High-Temperature Environments [Conference Presentation]. 10.2172/1890854

Rice, A., Crawford, M.H., Armstrong, A., Allerman, A., & Modine, N.A. (2021). Defect Spectroscopy and Reduced Compensation of UV Illuminated MOCVD n-type GaN [Conference Presentation]. 10.2172/1888973

Klein, B., Armstrong, A., Allerman, A., Nordquist, C.D., Neely, J.C., Reza, S., Douglas, E.A., van Heukelom, M., Rice, A., Patel, V.J., Matins, B., Fortune, T., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., & Kaplar, R. (2021). AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic [Conference Presentation]. 10.2172/1882105

Renteria, E., Dix, C., Subhashree, S., Mansoori, A., Hecht, A., Klem, J.F., Klein, B., Rice, A., Sharps, P., & Balakrishnan, G. (2020). Interaction of Ammonium Sulfide with the Semiconductor Surfaces of AlSb and Related Alloys [Conference Poster]. https://www.osti.gov/biblio/1798416

Renteria, E.J., Addamane, S.J., Padilla, E.A., Hecht, A.A., Balakrishnan, G., Klem, J.F., Rice, A., Pickrell, G.W., & Sharps, P. (2019). Etch and Surface Passivation Study of AlSb Diodes Grown on GaSb Substrates [Conference Poster]. https://www.osti.gov/biblio/1640991

Crawford, M.H., Rice, A., Allerman, A., Foulk, J.W., Ohta, T., Medlin, D.L., Spataru, C.D., Figiel, J.J., Foulk, J.W., & Sharps, P. (2019). Growth of hBN by High-Temperature Metal-Organic Chemical Vapor Deposition [Conference Poster]. https://www.osti.gov/biblio/1599274

Results 1–25 of 33
Results 1–25 of 33