Publications

Abstract not provided.

DNA-wrapped carbon nanotubes (DNA-CNT) have generated attention due the ability to disperse cleanly into solution, and by the possibility of sorting nanotubes according to size and conductivity. In order to learn more about the effects of DNA on the electrical transport characteristics of single wall carbon nanotubes, we fabricate and test a series of devices consisting of DNA-wrapped CNTs placed across gold, palladium, and palladium oxide electrodes. In addition, we look at how DNA functionalized CNTs react to presence of hydrogen, which has previously been shown to affect the conductivity of CNTs when in contact with palladium.

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We present experimental observation and theoretical analysis of looping carbon nanotubes connecting two electrodes. The measured conductance of the nanotubes is not strongly affected by the presence of these conformational defects, a result that is confirmed by quantum transport calculations. Our work indicates that solution-based fabrication methods for carbon nanotube devices can have high conformational defect tolerance, except for defects with 5-10 nanometer bending radius. © 2005 American Institute of Physics.

We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure. We present calculations that address the role of the molecular layer at the interface. Our results indicate that spatially resolved measurements add new insight to studies using conventional spatial-averaging techniques.

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We report the surface acoustic wave (SAW) correlator devices fabricated using nanoimprint lithography. Using step-and-flash imprint lithography (S-FIL), we produced SAW correlator devices on 100 mm diameter z-cut LiNbO 3 devices and an aluminum metal etch process. On the same chip layout, we fabricated SAW filters and compared both the filters and correlators to similar devices fabricated using electron-beam lithography (EBL). Both S-FIL- and EBL-patterned correlators and SAW filters were analyzed using a bit-error rate tester to generate the signal and a parametric signal analyzer to evaluate the output. The NIL niters had an average center frequency of 2.38 GHz with a standard deviation of 10 MHz. The measured insertion loss averaged -31 dB. In comparison, SAW filters fabricated using EBL exhibited a center frequency of 2.39 GHz and a standard deviation of 100 kHz. Based on our preliminary results, we believe that S-FIL is an efficient and entirely viable fabrication method to produce quality SAW filters and correlators. © 2004 American Vacuum Society.

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Twinning is ubiquitous in electroplated metals. Here, we identify and discuss unique aspects of twinning found in electrodeposited Ni-Mn alloys. Previous reports concluded that the twin boundaries effectively refine the grain size, which enhances mechanical strength. Quantitative measurements from transmission electron microscopy (TEM) images show that the relative boundary length in the as-plated microstructure primarily comprises twin interfaces. Detailed TEM characterization reveals a range of length scales associated with twinning beginning with colonies ({approx}1000 nm) down to the width of individual twins, which is typically <50 nm. We also consider the connection between the crystallographic texture of the electrodeposit and the orientation of the twin planes with respect to the plating direction. The Ni-Mn alloy deposits in this work possess a 110-fiber texture. While twinning can occur on {l_brace}111{r_brace} planes either perpendicular or oblique to the plating direction in {l_brace}110{r_brace}-oriented grains, plan-view TEM images show that twins form primarily on those planes parallel to the plating direction. Therefore, grains enclosed by twins and multiply twinned particles are produced. Another important consequence of a high twin density is the formation of large numbers of twin-related junctions. We measure an area density of twin junctions that is comparable to the density of dislocations in a heavily cold-worked metal.