We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly Si double quantum dots (DQDs) developed for quantum computing. The simulator core includes Poisson, Schrodinger, and Configuration Interaction solvers which can be run individually or combined self-consistently. The simulator is built upon Sandia-developed Trilinos and Albany components, and is interfaced with the Dakota optimization tool. It is being developed for seamless integration, high flexibility and throughput, and is intended to be open source. The QCAD tool has been used to simulate a large number of fabricated silicon DQDs and has provided fast feedback for design comparison and optimization.
A broad range of scientific computation involves the use of difference stencils. In a parallel computing environment, this computation is typically implemented by decomposing the spacial domain, inducing a 'halo exchange' of process-owned boundary data. This approach adheres to the Bulk Synchronous Parallel (BSP) model. Because commonly available architectures provide strong inter-node bandwidth relative to latency costs, many codes 'bulk up' these messages by aggregating data into a message as a means of reducing the number of messages. A renewed focus on non-traditional architectures and architecture features provides new opportunities for exploring alternatives to this programming approach. In this report we describe miniGhost, a 'miniapp' designed for exploration of the capabilities of current as well as emerging and future architectures within the context of these sorts of applications. MiniGhost joins the suite of miniapps developed as part of the Mantevo project.
This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.