Publications

King, M.P., Kaplar, R., Dickerson, J., Lee, S.R., Allerman, A., Crawford, M.H., Marinella, M., Flicker, J.D., Fleming, R.M., Kizilyalli, I.C., Aktas, O., Armstrong, A., & Armstrong, A. (2016). Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes. Applied Physics Letters, 109(18). 10.1063/1.4966903

Kaplar, R., Kizilyalli, I., Aktas, O., Armstrong, A., King, M.P., Vizkelethy, G., Wampler, W.R., Fleming, R.M., Dickerson, J., Leonard, F., Talin, A.A., Celio, K.C., Neely, J.C., Zutavern, F.J., Mauch, D.L., & Mauch, D.L. (2016). Vertical GaN Devices for Power Electronics in Extreme Environments [Conference Poster]. https://www.osti.gov/biblio/1366654

King, M.P., Armstrong, A., Dickerson, J., Vizkelethy, G., Fleming, R.M., Campbell, J., Wampler, W.R., Kizilyalli, I.C., Bour, D.P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A., Moseley, M.W., Kaplar, R., & Kaplar, R. (2015). Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes. IEEE Transactions on Nuclear Science, 62(6), pp. 2912-2918. 10.1109/tns.2015.2480071

Fleming, R.M. (2015). Novel Applications of Deep Level Transient Spectroscopy (DLTS) for QASPR Devices [Presentation]. https://www.osti.gov/biblio/1332807

Armstrong, A., Foulk, J.W., Fleming, R.M., King, M.P., Talin, A.A., Lee, S.R., Leonard, F., Vizkelethy, G., Wampler, W.R., Wright, A.F., & Wright, A.F. (2015). Physics of Defects and Reliability [Presentation]. https://www.osti.gov/biblio/1328649

King, M.P., Armstrong, A., Dickerson, J., Vizkelethy, G., Fleming, R.M., Campbell, J., Wampler, W.R., Kiziyalli, I.C., Bour, D.P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A., Moseley, M.W., Kaplar, R., & Kaplar, R. (2015). Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes [Conference Poster]. 10.1109/TNS.2015.2480071

Fleming, R.M., Seager, C.H., Lang, D.V., Campbell, J., & Campbell, J. (2015). Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors. Journal of Applied Physics, 118(1). 10.1063/1.4923358

Fleming, R.M., Wampler, W.R., Myers, S.M., King, D.B., & King, D.B. (2015). Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors [Conference Poster]. https://www.osti.gov/biblio/1248664

King, D.B., Fleming, R.M., Bielejec, E.S., McDonald, J.K., Vizkelethy, G., & Vizkelethy, G. (2014). Test simulation of neutron damage to electronic components using accelerator facilities [Presentation]. https://doi.org/10.1016/j.nimb.2015.08.026

King, D.B., Fleming, R.M., Bielejec, E.S., McDonald, J.K., Vizkelethy, G., & Vizkelethy, G. (2014). Test simulation of neutron damage to electronic components using accelerator facilities [Conference Poster]. 10.1016/j.nimb.2015.08.026

Bielejec, E.S., King, D.B., Patrizi, G., Serkland, D.K., Fleming, R.M., Vizkelethy, G., & Vizkelethy, G. (2014). Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation - Probing the Effects of Thermal and Current Injection Annealing [Presentation]. https://www.osti.gov/biblio/1496696

Fleming, R.M., Wampler, W.R., Campbell, J., & Campbell, J. (2014). Field Dependent Emission Rates in Radiation Damaged GaAs. Journal of Applied Physics, 116(1). https://doi.org/10.1063/1.4885156

Bielejec, E.S., McDonald, J.K., Vizkelethy, G., Fleming, R.M., & Fleming, R.M. (2014). Test simulation of neutron damage to electronic components using accelerator facilities [Conference]. 10.1016/j.nimb.2015.08.026

Bielejec, E.S., King, D.B., Vizkelethy, G., Doyle, B.L., Serkland, D.K., Fleming, R.M., Pacheco, J.L., Hughart, D.R., Marinella, M., Carroll, M.S., & Carroll, M.S. (2014). Radiation Testing Capability for Electronic Devices and Circuits at Sandia's Ion Beam Laboratory [Conference]. https://www.osti.gov/biblio/1145627

Kim, J.K., Fleming, R.M., Campbell, J., Hawkins, S.D., Klem, J.F., Olson, B.V., Kadlec, E.A., & Kadlec, E.A. (2013). Recombination Mechanisms in Ga-free Type-II Superlattices and Alloys [Conference]. https://www.osti.gov/biblio/1114638

Fleming, R.M. (2013). Radiation-Induced Trap Spectroscopy in Si Bipolar Transistors and GaAs Diodes [Presentation]. https://www.osti.gov/biblio/1661279

Fleming, R.M., Vizkelethy, G., Bielejec, E.S., King, D.B., McDonald, J.K., & McDonald, J.K. (2013). Revisiting Recombination Current in Electron Ion and Neutron Damaged GaAs Diodes [Presentation]. https://www.osti.gov/biblio/1649687

Vizkelethy, G., Fleming, R.M., Bielejec, E.S., & Bielejec, E.S. (2012). Investigation of ion beam induced radiation damage in Si diodes. Proposed for publication in Nuclear Instruments and Methods B.. https://www.osti.gov/biblio/1064350

Vizkelethy, G., Fleming, R.M., & Fleming, R.M. (2012). The Messenger-Spratt relation [Presentation]. https://www.osti.gov/biblio/1686333

Vizkelethy, G., Bielejec, E.S., Fleming, R.M., King, D.B., Wampler, W.R., & Wampler, W.R. (2012). Radiation damage in bipolar junction transistors (BJTs) [Presentation]. https://www.osti.gov/biblio/1686331

Vizkelethy, G., Bielejec, E.S., Fleming, R.M., & Fleming, R.M. (2012). Investigation of ion beam induced radiation damage in Si PN diodes [Conference]. https://www.osti.gov/biblio/1064264

Vizkelethy, G., Fleming, R.M., Kolb, N., King, D.B., Patrizi, G., & Patrizi, G. (2011). Effects of current injection annealing on III-V heterojunction bipolar transistors [Presentation]. https://www.osti.gov/biblio/1288650

Marinella, M., Fleming, R.M., Stevens, J.E., Akinnikawe, E.M., & Akinnikawe, E.M. (2011). Fundamental Study of Metal/Oxide/Metal Memristor Physics and Device Optimization [Conference]. https://www.osti.gov/biblio/1143470

Fleming, R.M., Campbell, J., & Campbell, J. (2011). Transformation Kinetics of an Intrinsic Bistable Defect in Damaged Silicon. Journal of Applied Physics. https://www.osti.gov/biblio/1107704

Stevens, J.E., James, C.D., Hsia, A.W., Fleming, R.M., Akinnikawe, E.M., & Akinnikawe, E.M. (2011). Neuromorphic Computing with Memristors [Conference]. https://www.osti.gov/biblio/1288939