Publications

King, M.P., Kaplar, R.J., Dickerson, J., Lee, S.R., Allerman, A., Crawford, M., Marinella, M., Flicker, J.D., Fleming, R.M., Kizilyalli, I.C., Aktas, O., Armstrong, A., & Armstrong, A. (2016). Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes. Applied Physics Letters, 109(18). https://doi.org/10.1063/1.4966903

Kaplar, R.J., Kizilyalli, I., Aktas, O., Armstrong, A., King, M.P., Vizkelethy, G., Wampler, W.R., Fleming, R.M., Dickerson, J., Leonard, F., Talin, A.A., Celio, K.C., Neely, J.C., Zutavern, F.J., Mauch, D.L., & Mauch, D.L. (2016). Vertical GaN Devices for Power Electronics in Extreme Environments [Conference Poster]. https://www.osti.gov/biblio/1366654

King, M.P., Armstrong, A., Dickerson, J., Vizkelethy, G., Fleming, R.M., Campbell, J., Wampler, W.R., Kizilyalli, I.C., Bour, D.P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A., Moseley, M.W., Kaplar, R.J., & Kaplar, R.J. (2015). Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes. IEEE Transactions on Nuclear Science, 62(6), pp. 2912-2918. https://doi.org/10.1109/tns.2015.2480071

Fleming, R.M. (2015). Novel Applications of Deep Level Transient Spectroscopy (DLTS) for QASPR Devices [Presentation]. https://www.osti.gov/biblio/1332807

Armstrong, A., Bachman, W.B., Fleming, R.M., King, M.P., Talin, A.A., Lee, S.R., Leonard, F., Vizkelethy, G., Wampler, W.R., Wright, A.F., & Wright, A.F. (2015). Physics of Defects and Reliability [Presentation]. https://www.osti.gov/biblio/1328649

King, M.P., Armstrong, A., Dickerson, J., Vizkelethy, G., Fleming, R.M., Campbell, J., Wampler, W.R., Kiziyalli, I.C., Bour, D.P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A., Moseley, M.W., Kaplar, R.J., & Kaplar, R.J. (2015). Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes [Conference Poster]. https://doi.org/10.1109/TNS.2015.2480071

Fleming, R.M., Seager, C.H., Lang, D.V., Campbell, J., & Campbell, J. (2015). Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors. Journal of Applied Physics, 118(1). https://doi.org/10.1063/1.4923358

Fleming, R.M., Wampler, W.R., M., S.M., King, D.B., & King, D.B. (2015). Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors [Conference Poster]. https://www.osti.gov/biblio/1248664

King, D.B., Fleming, R.M., Bielejec, E.S., McDonald, J.K., Vizkelethy, G., & Vizkelethy, G. (2014). Test simulation of neutron damage to electronic components using accelerator facilities [Presentation]. https://doi.org/10.1016/j.nimb.2015.08.026

King, D.B., Fleming, R.M., Bielejec, E.S., McDonald, J.K., Vizkelethy, G., & Vizkelethy, G. (2014). Test simulation of neutron damage to electronic components using accelerator facilities [Conference Poster]. https://doi.org/10.1016/j.nimb.2015.08.026

Bielejec, E.S., King, D.B., Patrizi, G., Serkland, D.K., Fleming, R.M., Vizkelethy, G., & Vizkelethy, G. (2014). Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation - Probing the Effects of Thermal and Current Injection Annealing [Presentation]. https://www.osti.gov/biblio/1496696

Fleming, R.M., Wampler, W.R., Campbell, J., & Campbell, J. (2014). Field Dependent Emission Rates in Radiation Damaged GaAs. Journal of Applied Physics, 116(1). https://doi.org/10.1063/1.4885156

Bielejec, E.S., McDonald, J.K., Fleming, R.M., & Fleming, R.M. (2014). Test simulation of neutron damage to electronic components using accelerator facilities [Conference]. https://doi.org/10.1016/j.nimb.2015.08.026

Bielejec, E.S., King, D.B., Doyle, B.L., Serkland, D.K., Fleming, R.M., Pacheco, J.L., Hughart, D.R., Marinella, M., Carroll, M.S., & Carroll, M.S. (2014). Radiation Testing Capability for Electronic Devices and Circuits at Sandia's Ion Beam Laboratory [Conference]. https://www.osti.gov/biblio/1145627

Kim, J.K., Fleming, R.M., Campbell, J., Hawkins, S.D., Klem, J.F., Olson, B.V., Kadlec, E.A., & Kadlec, E.A. (2013). Recombination Mechanisms in Ga-free Type-II Superlattices and Alloys [Conference]. https://www.osti.gov/biblio/1114638

Fleming, R.M. (2013). Radiation-Induced Trap Spectroscopy in Si Bipolar Transistors and GaAs Diodes [Presentation]. https://www.osti.gov/biblio/1661279

Fleming, R.M., Vizkelethy, G., Bielejec, E.S., King, D.B., McDonald, J.K., & McDonald, J.K. (2013). Revisiting Recombination Current in Electron Ion and Neutron Damaged GaAs Diodes [Presentation]. https://www.osti.gov/biblio/1649687

Vizkelethy, G., Fleming, R.M., Bielejec, E.S., & Bielejec, E.S. (2012). Investigation of ion beam induced radiation damage in Si diodes. Proposed for publication in Nuclear Instruments and Methods B.. https://www.osti.gov/biblio/1064350

Vizkelethy, G., Fleming, R.M., & Fleming, R.M. (2012). The Messenger-Spratt relation [Presentation]. https://www.osti.gov/biblio/1686333

Bielejec, E.S., Fleming, R.M., King, D.B., Wampler, W.R., & Wampler, W.R. (2012). Radiation damage in bipolar junction transistors (BJTs) [Presentation]. https://www.osti.gov/biblio/1686331

Vizkelethy, G., Bielejec, E.S., Fleming, R.M., & Fleming, R.M. (2012). Investigation of ion beam induced radiation damage in Si PN diodes [Conference]. https://www.osti.gov/biblio/1064264

Bielejec, E.S., King, D.B., Kolb, N., Patrizi, G., Fleming, R.M., & Fleming, R.M. (2011). Effects of current injection annealing on III-V heterojunction bipolar transistors [Conference]. https://www.osti.gov/biblio/1288650

Marinella, M., Fleming, R.M., Stevens, J.E., Akinnikawe, E.M., & Akinnikawe, E.M. (2011). Fundamental Study of Metal/Oxide/Metal Memristor Physics and Device Optimization [Conference]. https://www.osti.gov/biblio/1143470

Fleming, R.M., Campbell, J., & Campbell, J. (2011). Transformation Kinetics of an Intrinsic Bistable Defect in Damaged Silicon. Journal of Applied Physics. https://www.osti.gov/biblio/1107704

Stevens, J.E., James, C.D., Hsia, A.W., Fleming, R.M., Akinnikawe, E.M., & Akinnikawe, E.M. (2011). Neuromorphic Computing with Memristors [Conference]. https://www.osti.gov/biblio/1288939

Fleming, R.M., Campbell, J., & Campbell, J. (2010). Annealing Neutron Damaged Silicon Bipolar Transistors - Relating Gain Degradation to Specific Lattice Defects. Journal of Applied Physics, 108(6). https://doi.org/10.1063/1.3480798

Bielejec, E.S., Hembree, C., McDonald, J.K., Wampler, W.R., Fleming, R.M., Vizkelethy, G., Sheridan, T.J., Harper-Slaboszewicz, V., Griffin, P.J., & Griffin, P.J. (2009). Test Simulation of Neutron Damage to Electronic Components and Circuits using Accelerator Facilities [Conference]. https://www.osti.gov/biblio/1141802

Bielejec, E.S., Fleming, R.M., Vizkelethy, G., King, D.B., & King, D.B. (2008). Comparison Between Electrical and Direct Defect Measurements for Ion and Neutron Irradiations [Conference]. https://www.osti.gov/biblio/1145850

Fleming, R.M., Bielejec, E.S., Campbell, J., & Campbell, J. (2008). A Bistable Divacancy-Like Defect in Silicon Damage Cascades. Journal of Applied Physics, 104(8). https://doi.org/10.1063/1.2991135

Blansett, E., Serkland, D.K., Geib, K.M., Peake, G., Fleming, R.M., Wrobel, D., & Wrobel, D. (2008). Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence. https://doi.org/10.2172/934851

Fleming, R.M., Bielejec, E.S., Campbell, J., & Campbell, J. (2007). Gain and Defect Bi-Stability in Radiation Damaged Silicon Bipolar Transistors. Physica. B, Condensed Matter, 401-402. https://doi.org/10.1016/j.physb.2007.08.105

Vizkelethy, G., Bielejec, E.S., Fleming, R.M., King, D.B., Doyle, B.L., & Doyle, B.L. (2007). Comparison of displacement damage due to ion and neutron beam irradiations in silicon bipolar junction transistors [Conference]. https://www.osti.gov/biblio/1146608

Bielejec, E.S., Griffin, P.J., McDonald, J.K., Cooper, P., Fleming, R.M., & Fleming, R.M. (2007). Variability in Damage Equivalence Metrics between Heavy Ions and Neutrons [Conference]. https://www.osti.gov/biblio/1147475

Bielejec, E.S., Vizkelethy, G., Fleming, R.M., King, D.B., & King, D.B. (2007). Metrics for Comparison Between Displacement Damage due to Ion Beam and Neutron Irradiation in Silicon BJTs [Conference]. https://www.osti.gov/biblio/1147353

Fleming, R.M., Cooper, P., Bielejec, E.S., Campbell, J., & Campbell, J. (2007). Effects of Defect Clustering in Neutron Irradiated Silicon. Physica B: Condensed Matter. https://www.osti.gov/biblio/1147477

Fleming, R.M., Bielejec, E.S., & Bielejec, E.S. (2007). Measurements of Defects in Silicon Bipolar Transistors Following Neutron and Ion Irradiation [Presentation]. https://www.osti.gov/biblio/1731100

Bielejec, E.S., Vizkelethy, G., Fleming, R.M., King, D.B., Griffin, P.J., Doyle, B.L., & Doyle, B.L. (2007). Comparison between ion beam and fast neutron irradiation in silicon BJTs [Conference]. https://www.osti.gov/biblio/1266902

Bielejec, E.S., Vizkelethy, G., King, D.B., Fleming, R.M., & Fleming, R.M. (2007). Metrics for comparison between displacement damage due to ion beam and neutron irradiation in silicon BJTs [Conference]. https://www.osti.gov/biblio/1267222

Fleming, R.M., Cooper, P., Bielejec, E.S., Campbell, J., & Campbell, J. (2007). Effects of Clustering on the Properties of Defects in Neutron Irradiated Silicon. Journal of Applied Physics, 102(4). https://doi.org/10.1063/1.2769783

Vizkelethy, G., Bielejec, E.S., Doyle, B.L., Buller, D.L., Fleming, R.M., Hjalmarson, H.P., & Hjalmarson, H.P. (2006). Simulation of neutron displacement damage in bipolar junction transistors using high-energy heavy ion beams. https://doi.org/10.2172/913228

Fleming, R.M., Myers, S.M., & Myers, S.M. (2006). Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H). Journal of Applied Physics, 100(4). https://doi.org/10.1063/1.1883309

Fleming, R.M., Draper, B.L., & Draper, B.L. (2005). Gate oxide reliability in an integrated MOSFET-MEMS technology. Proposed for publication in the Journal of Vacuum Science and Technology B.. https://www.osti.gov/biblio/972480