Publications

Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., Kaplar, R., & Kaplar, R. (2023). AlGaN High Electron Mobility Transistor for High-Temperature Logic. Journal of Microelectronics and Electronic Packaging, 20(1). 10.4071/imaps.1832996

Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, C., Kaplar, R., & Kaplar, R. (2022). AlGaN High Electron Mobility Transistor for High Temperature Logic [Conference Presentation]. Advancing Microelectronics. 10.2172/2003976

Klein, B., Allerman, A., Baca, A.G., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, C., Kaplar, R., & Kaplar, R. (2022). AlGaN High Electron Mobility Transistor for High Temperature Logic [Conference Proceeding]. 10.4071/imaps.1832996

Klein, B., Allerman, A., Hines, N., Nordquist, C.D., Armstrong, A., van Heukelom, M., Rice, A., Patel, V.J., Pipkin, J.R., Foulk, J.W., Caravello, L.A., Rosprim, M., Kotula, P.G., Abate, V.M., Graham, S., Kaplar, R., & Kaplar, R. (2021). AlGaN Transistors for Digital Logic Applications in High-Temperature Environments [Conference Presentation]. 10.2172/1890854

Klein, B., Armstrong, A., Allerman, A., Nordquist, C.D., Neely, J.C., Reza, S., Douglas, E.A., van Heukelom, M., Rice, A., Patel, V.J., Matins, B., Fortune, T., Rosprim, M., Caravello, L.A., Foulk, J.W., Pipkin, J.R., Abate, V.M., Kaplar, R., & Kaplar, R. (2021). AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic [Conference Presentation]. 10.2172/1882105

Negrete, O.A., Bradfute, S., Larson, S.R., Sinha, A., Coombes, K.R., Goeke, R.S., Keenan, L.A., Duay, J., van Heukelom, M., Meserole, S., Jacobs-Gedrim, R.B., & Jacobs-Gedrim, R.B. (2020). Photocatalytic Material Surfaces for SARS-CoV-2 Virus Inactivation. 10.2172/1669200

Agarwal, S., Jacobs-Gedrim, R.B., Bennett, C., Xiao, T.P., van Heukelom, M., Hughart, D.R., Fuller, E.J., Li, Y., Talin, A.A., Marinella, M., & Marinella, M. (2020). Designing and Modelling Analog Neural Network Training Accelerators [Presentation]. https://www.osti.gov/biblio/1764800

Jasica, M.J., Wampler, W.R., Doyle, B.L., Vizkelethy, G., Pickrell, G.W., Cowan, W.D., Colon, A., van Heukelom, M., Glaser, C.E., & Glaser, C.E. (2019). Simulations of Vertical GaN Diode Performance Under Electron Beam Radiation Exposures [Conference Poster]. https://www.osti.gov/biblio/1643490

Agarwal, S., Jacobs-Gedrim, R.B., Bennett, C., Hsia, A.W., van Heukelom, M., Hughart, D.R., Fuller, E.J., Li, Y., Talin, A.A., Marinella, M., & Marinella, M. (2019). Designing and Modeling Analog Neural Network Training Accelerators [Conference Poster]. 10.1109/VLSI-TSA.2019.8804680

Jasica, M.J., Wampler, W.R., Doyle, B.L., Vizkelethy, G., Pickrell, G.W., Cowan, W.D., Colon, A., van Heukelom, M., Glaser, C.E., & Glaser, C.E. (2019). Simulations of vertical gan diode performance under electron beam radiation exposures [Conference Poster]. Transactions of the American Nuclear Society. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85092150783&origin=inward

Colon, A., Douglas, E.A., Pope, A.J., Klein, B., Stephenson, C.A., van Heukelom, M., Tauke-Pedretti, A., Baca, A.G., & Baca, A.G. (2018). Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm² specific on-resistance AlGaN/GaN Schottky barrier diode. Solid-State Electronics, 151(C). 10.1016/j.sse.2018.10.009

Pickrell, G.W., Armstrong, A., Allerman, A., Crawford, M.H., Feezell, D., Monavarian, M., Aragon, A., Zutavern, F.J., Mar, A., Schrock, E.A., Flicker, J.D., Delhotal, J.J., Teague, J.D., Lehr, J.M., Cross, K.C., Glaser, C.E., van Heukelom, M., Gallegos, R.J., Bigman, V.H., Kaplar, R., & Kaplar, R. (2018). Advanced GaN Device Technologies for Power Electronics [Conference Poster]. https://www.osti.gov/biblio/1806873

Slobodyan, O., Smith, T., Flicker, J.D., Sandoval, S., Matthews, C., van Heukelom, M., Kaplar, R., Atcitty, S., & Atcitty, S. (2018). Hard-switching Reliability Studies of Vertical GaN 1200 V PiN Diodes [Conference Poster]. 10.1557/mrc.2018.204

Slobodyan, O., Smith, T., Flicker, J.D., Sandoval, S., Matthews, C., van Heukelom, M., Kaplar, R., Atcitty, S., & Atcitty, S. (2018). Hard-Switching Reliability Studies of 1200 V Vertical GaN PiN Diodes [Conference Poster]. 10.1557/mrc.2018.204

Crawford, M.H., Allerman, A., Armstrong, A., Kaplar, R., Pickrell, G.W., Dickerson, J., Smith, M.L., Cross, K.C., Abate, V.M., Glaser, C.E., van Heukelom, M., & van Heukelom, M. (2018). Materials Challenges of AlGaN-Based Power Electronics and UV Lasers (invited) [Conference Poster]. https://www.osti.gov/biblio/1524137

Kaplar, R., Slobodyan, O., Flicker, J.D., Sandoval, S., Matthews, C., van Heukelom, M., Smith, T., Atcitty, S., Khalil, S., Bahl, S., & Bahl, S. (2018). Hard-Switching Reliabiity Studies of 1200 V Vertical GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1507032

Jacobs-Gedrim, R.B., Agarwal, S., Knisely, K., Stevens, J.E., van Heukelom, M., Hughart, D.R., James, C.D., Marinella, M., & Marinella, M. (2017). Impact of linearity and write noise of analog resistive memory devices in a neural algorithm accelerator. 2017 IEEE International Conference on Rebooting Computing, ICRC 2017 - Proceedings, 2017-January, pp. 1-10. 10.1109/ICRC.2017.8123657

Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., King, M.P., Cross, K.C., Glaser, C.E., van Heukelom, M., Baca, A.G., Reza, S., Klein, B., Douglas, E.A., & Douglas, E.A. (2017). Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices (invited) [Presentation]. https://www.osti.gov/biblio/1485032

Dickerson, J., Kaplar, R., Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Cross, K.C., Glaser, C.E., van Heukelom, M., & van Heukelom, M. (2017). High Breakdown (>3000 V) Al0.3Ga0.7N PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1513591

Slobodyan, O., Sandoval, S., Flicker, J.D., Kaplar, R., Matthews, C., van Heukelom, M., Atcitty, S., Aktas, O., Kizilyalli, I., & Kizilyalli, I. (2017). Switching Reliability of GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1483227

Jacobs-Gedrim, R.B., Agarwal, S., Knisely, K., Stevens, J.E., van Heukelom, M., Hughart, D.R., James, C.D., Marinella, M., & Marinella, M. (2017). Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator [Conference Poster]. 10.1109/ICRC.2017.8123657

Kaplar, R., Allerman, A., Armstrong, A., Crawford, M.H., Pickrell, G.W., Dickerson, J., Flicker, J.D., Neely, J.C., King, M.P., Cross, K.C., Glaser, C.E., van Heukelom, M., Baca, A.G., Reza, S., Klein, B., Douglas, E.A., & Douglas, E.A. (2017). Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices [Conference Poster]. https://www.osti.gov/biblio/1480181

Slobodyan, O., Sandoval, S., Flicker, J.D., Kaplar, R., Matthews, C., van Heukelom, M., Atcitty, S., Aktas, O., Kizilyalli, I.C., & Kizilyalli, I.C. (2017). Switching Reliability Characterization of Vertical GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1480182

Allerman, A., Crawford, M.H., Pickrell, G.W., Armstrong, A., Baca, A.G., Kaplar, R., Dickerson, J., Klein, B., Douglas, E.A., King, M.P., van Heukelom, M., & van Heukelom, M. (2017). AlGaN-Based PN Diodes for Power Electronics (invited) [Presentation]. https://www.osti.gov/biblio/1509969

Slobodyan, O., Sandoval, S., Flicker, J.D., Kaplar, R., Matthews, C., van Heukelom, M., Atcitty, S., Kizilyalli, I., Aktas, O., & Aktas, O. (2017). Switching Reliability Characterization of Vertical GaN PiN Diodes [Conference Poster]. https://www.osti.gov/biblio/1470826